Hydrogen-induced mechanical properties of amorphous silicon thin films

Mechanical properties of thin films such as residual stress and hardness are of paramount importance from the device fabrication point of view. Intrinsic stress in sputtered films can be tensile or compressive as decided by the number density and the energy of the plasma species striking the growing film. In the presence of hydrogen we analyzed the applicability of idealized stress reversal curve for amorphous silicon thin films deposited by DC, pulsed DC (PDC) and RF sputtering. We are successfully able to correlate the microstructure with the stress reversal and hardness. We observed a stress reversal from compressive to tensile with hydrogen incorporation. It was found that unlike in idealized stress reversal curve case, though the energy of plasma species is less in DC plasma, DC deposited films exhibit more compressive stress, followed by PDC and RF deposited films. A tendency towards tensile stress from compressive stress was observed at similar to 13, 18 and 23 at%H for DC, PDC and RF deposited films respectively, which is in exact agreement with the vacancy to void transition in the films. Regardless of the sputtering power mode, the hardness of a-Si:H films is found to be maximum at C-H similar to 10 at%H. Enhancement in hardness with C-H (up to C-H similar to 10 at%H) is attributed to increase of Si-H bonds. Beyond C-H similar to 10 at%H, hardness starts falling. (C) 2015 Elsevier Ltd. All rights reserved.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

In situ synthesis of DNA microarray on functionalized cyclic olefin copolymer substrate.

Thermoplastic materials such as cyclic-olefin copolymers (COC) provide a versatile and cost-effective alternative to the traditional glass or silicon substrate for rapid prototyping and industrial scale fabrication of microdevices. To extend the utility of COC as an effective microarray substrate, we developed a new method that enabled for the first time in situ synthesis of DNA oligonucleotide microarrays on the COC substrate. To achieve high-quality DNA synthesis, a SiO(2) thin film array was prepatterned on the inert and hydrophobic COC surface using RF sputtering technique. The subsequent in situ DNA synthesis was confined to the surface of the prepatterned hydrophilic SiO(2) thin film features by precision delivery of the phosphoramidite chemistry using an inkjet DNA synthesizer. The in situ SiO(2)-COC DNA microarray demonstrated superior quality and stability in hybridization assays and thermal cycling reactions. Furthermore, we demonstrate that pools of high-quality mixed-oligos could be cleaved off the SiO(2)-COC microarrays and used directly for construction of DNA origami nanostructures. It is believed that this method will not only enable synthesis of high-quality and low-cost COC DNA microarrays but also provide a basis for further development of integrated microfluidics microarrays for a broad range of bioanalytical and biofabrication applications.

Study of multiferroic materials

The present PhD work aims the research and development of materials that exhibit multiferroic properties, in particular having a significant interaction between ferromagnetism and ferroelectricity; either directly within an intrinsic single phase or by combining extrinsic materials, achieving the coupling of properties through mechanic phenomena of the respective magnetostriction and piezoelectricity. These hybrid properties will allow the cross modification of magnetic and electric polarization states by the application of cross external magnetic and/or electric fields, giving way to a vast area for scientific investigation and potential technological applications in a new generation of electronic devices, such as computer memories, signal processing, transducers, sensors, etc. Initial experimental work consisted in chemical synthesis of nano powders oxides by urea pyrolysis method: A series of ceramic bulk composites with potential multiferroic properties comprised: of LuMnO3 with La0.7Sr0.3MnO3 and BaTiO3 with La0.7Ba0.3MnO3; and a series based on the intrinsic multiferroic LuMn1-zO3 phase modified with of Manganese vacancies. The acquisition of a new magnetron RF sputtering deposition system, in the Physics Department of Aveiro University, contributed to the proposal of an analogous experimental study in multiferroic thin films and multilayer samples. Besides the operational debut of this equipment several technical upgrades were completed like: the design and construction of the heater electrical contacts; specific shutters and supports for the magnetrons and for the substrate holder and; the addition of mass flow controllers, which allowed the introduction of N2 or O2 active atmosphere in the chamber; and the addition of a second RF generator, enabling co-deposition of different targets. Base study of the deposition conditions and resulting thin films characteristics in different substrates was made from an extensive list of targets. Particular attention was given to thin film deposition of magnetic phases La1-xSrxMnO3, La1-xBaxMnO3 and Ni2+x-yMn1-xGa1+y alloy, from the respective targets: La0.7Sr0.3MnO3, La0.7Ba0.3MnO3; and NiGa with NiMn. Main structural characterization of samples was performed by conventional and high resolution X-Ray Diffraction (XRD); chemical composition was determined by Electron Dispersion Spectroscopy (EDS); magnetization measurements recur to a Vibrating Sample Magnetometer (VSM) prototype; and surface probing (SPM) using Magnetic-Force (MFM) and Piezo-Response (PFM) Microscopy. Results clearly show that the composite bulk samples (LuM+LSM and BTO+LBM) feat the intended quality objectives in terms of phase composition and purity, having spurious contents below 0.5 %. SEM images confirm compact grain packaging and size distribution around the 50 nm scale. Electric conductivity, magnetization intensity and magneto impedance spreading response are coherent with the relative amount of magnetic phase in the sample. The existence of coupling between the functional phases is confirmed by the Magnetoelectric effect measurements of the sample “78%LuM+22%LSM” reaching 300% of electric response for 1 T at 100 kHz; while in the “78%BTO+22%LBM” sample the structural transitions of the magnetic phase at ~350 K result in a inversion of ME coefficient the behavior. A functional Magneto-Resistance measurement system was assembled from the concept stage until the, development and operational status; it enabled to test samples from 77 to 350 K, under an applied magnetic field up to 1 Tesla with 360º horizontal rotation; this system was also designed to measure Hall effect and has the potential to be further upgraded. Under collaboration protocols established with national and international institutions, complementary courses and sample characterization studies were performed using Magneto-Resistance (MR), Magneto-Impedance (MZ) and Magneto-Electric (ME) measurements; Raman and X-ray Photoelectron Spectroscopy (XPS); SQUID and VSM magnetization; Scanning Electron Microscopy (SEM) and Rutherford Back Scattering (RBS); Scan Probe Microscopy (SPM) with Band Excitation Probe Spectroscopy (BEPS); Neutron Powder Diffraction (NPD) and Perturbed Angular Correlations (PAC). Additional collaboration in research projects outside the scope of multiferroic materials provided further experience in sample preparation and characterization techniques, namely VSM and XPS measurements were performed in cubane molecular complex compounds and enable to identify the oxidation state of the integrating cluster of Ru ions; also, XRD and EDS/SEM analysis of the acquired targets and substrates implied the devolution of some items not in conformity with the specifications. Direct cooperation with parallel research projects regarding multiferroic materials, enable the assess to supplementary samples, namely a preliminary series of nanopowder Y1-x-yCaxØyMn1O3 and of Eu0.8Y0.2MnO3, a series of micropowder composites of LuMnO3 with La0.625Sr0.375MnO3 and of BaTiO3 with hexagonal ferrites; mono and polycrystalline samples of Pr1-xCaxMnO3, La1-xSrxMnO3 and La1-xCaxMnO3.

Preparation and characterisation of certain II-VI, I-III-VI2 semiconductor thin films and transparent conducting oxides

There is an increasing demand for renewable energies due to the limited availability of fossil and nuclear fuels and due to growing environmental problems. Photovoltaic (PV) energy conversion has the potential to contribute significantly to the electrical energy generation in the future. Currently, the cost for photovoltaic systems is one of the main obstacles preventing production and application on a large scale. The photovoltaic research is now focused on the development of materials that will allow mass production without compromising on the conversion efficiencies. Among important selection criteria of PV material and in particular for thin films, are a suitable band gap, high absorption coefficient and reproducible deposition processes capable of large-volume and low cost production. The chalcopyrite semiconductor thin films such as Copper indium selenide and Copper indium sulphide are the materials that are being intensively investigated for lowering the cost of solar cells. Conversion efficiencies of 19 % have been reported for laboratory scale solar cell based on CuInSe2 and its alloys. The main objective of this thesis work is to optimise the growth conditions of materials suitable for the fabrication of solar cell, employing cost effective techniques. A typical heterojunction thin film solar cell consists of an absorber layer, buffer layer and transparent conducting contacts. The most appropriate techniques have been used for depositing these different layers, viz; chemical bath deposition for the window layer, flash evaporation and two-stage process for the absorber layer, and RF magnetron sputtering for the transparent conducting layer. Low cost experimental setups were fabricated for selenisation and sulphurisation experiments, and the magnetron gun for the RF sputtering was indigenously fabricated. The films thus grown were characterised using different tools. A powder X-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive X-ray analysis (EDX) and scanning electron microscopy i (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UV-Vis-NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using the two probe and four probe electrical measurements. Nature of conductivity of the films was determined by thermoprobe and thermopower measurements. The deposition conditions and the process parameters were optimised based on these characterisations.

Electron energy loss spectroscopy assessment of cationic migration in La2/3Ca1/3MnO3 thin films

Màster en Nanociència i Nanotecnologia curs 2006-2007. Directors: Francesca Peiró i Martínez and Jordi Arbiol i Cobos

Structural, electrical and electrochemical characterization of high frequency magnetron sputtered spinel oxide cathode films for lithium ion battery applications

The main challenges in the deposition of cathode materials in thin film form are the reproduction of stoichiometry close to the bulk material and attaining higher rates of deposition and excellent crystallinity at comparatively lower annealing temperatures. There are several methods available to develop stoichiometric thin film cathode materials including pulsed laser deposition; plasma enhanced chemical vapor deposition, electron beam evaporation, electrostatic spray deposition and RF magnetron sputtering. Among them the most versatile method is the sputtering technique, owing to its suitability for micro-fabricating the thin film batteries directly on chips in any shape or size, and on flexible substrates, with good capacity and cycle life. The main drawback of the conventional sputtering technique using RF frequency of 13.56MHz is its lower rate of deposition, compared to other deposition techniques A typical cathode layer for a thin film battery requires a thickness around one micron. To deposit such thick layers using convention RF sputtering, longer time of deposition is required, since the deposition rate is very low, which is typically 10-20 Å/min. This makes the conventional RF sputtering technique a less viable option for mass production in an economical way. There exists a host of theoretical and experimental evidences and results that higher excitation frequency can be efficiently used to deposit good quality films at higher deposition rates with glow discharge plasma. The effect of frequencies higher than the conventional one (13.56MHz) on the RF magnetron sputtering process has not been subjected to detailed investigations. Attempts have been made in the present work, to sputter deposit spinel oxide cathode films, using high frequency RF excitation source. Most importantly, the major challenge faced by the thin film battery based on the LiMn2O4 cathode material is the poor capacity retention during charge discharge cycling. The major causes for the capacity fading reported in LiMn2O4cathode materials are due to, Jahn-Teller distortion, Mn2+ dissolution into the electrolyte and oxygen loss in cathode material during cycling. The work discussed in this thesis is an attempt on overcoming the above said challenges and developing a high capacity thin film cathode material.

Magnetische Kopplungen in magneto-optischen Speicherschichten

Im Rahmen dieser Arbeit wurden magneto-optische Speicherschichten und ihre Kopplungen untereinander untersucht. Hierzu wurden zum Einen die für die magneto-optische Speichertechnologie "klassischen" Schichten aus RE/TM-Legierungen verwendet, zum Anderen aber auch erfolgreich Granate integriert, die bisher nicht in diesem Anwendungsgebiet verwendet wurden. Einleitend werden die magneto-optischen Verfahren, die resultierenden Anforderungen an die dünnen Schichten und die entsprechenden physikalischen Grundlagen diskutiert. Außerdem wird auf das Hochfrequenz-Sputtern von RE/TM-Legierungen eingegangen und die verwendeten magneto-optischen Messverfahren werden erläutert [Kap. 2 & 3]. Die Untersuchungen an RE/TM-Schichten bestätigen die aus der Literatur bekannten Eigenschaften. Sie lassen sich effektiv, und für magneto-optische Anwendungen geeignet, über RF-Sputtern herstellen. Die unmittelbaren Schicht-Parameter, wie Schichtdicke und Terbium-Konzentration, lassen sich über einfache Zusammenhänge einstellen. Da die Terbium-Konzentration eine Änderung der Kompensationstemperatur bewirkt, lässt sich diese mit Messungen am Kerr-Magnetometer überprüfen. Die für die Anwendung interessante senkrechte magnetische Anisotropie konnte ebenfalls mit den Herstellungsbedingungen verknüpft werden. Bei der Herstellung der Schichten auf einer glatten Glas-Oberfläche (Floatglas) zeigt die RE/TM-Schicht bereits in den ersten Lagen ein Wachstumsverhalten, das eine senkrechte Anisotropie bewirkt. Auf einer Quarzglas- oder Keramik-Oberfläche wachsen die ersten Lagen in einer durch das Substrat induzierten Struktur auf, danach ändert sich das Wachstumsverhalten stetig, bis eine senkrechte Anisotropie erreicht wird. Dieses Verhalten kann auch durch verschiedene Pufferschichten (Aluminium und Siliziumnitrid) nur unwesentlich beeinflusst werden [Kap. 5 & Kap. 6]. Bei der direkten Aufbringung von Doppelschichten, bestehend aus einer Auslese-Schicht (GdFeCo) auf einer Speicherschicht (TbFeCo), wurde die Austausch-Kopplung demonstriert. Die Ausleseschicht zeigt unterhalb der Kompensationstemperatur keine Kopplung an die Speicherschicht, während oberhalb der Kompensationstemperatur eine direkte Kopplung der Untergitter stattfindet. Daraus ergibt sich das für den MSR-Effekt erwünschte Maskierungsverhalten. Die vorher aus den Einzelschichten gewonnen Ergebnisse zu Kompensationstemperatur und Wachstumsverhalten konnten in den Doppelschichten wiedergefunden werden. Als Idealfall erweist sich hier die einfachste Struktur. Man bringt die Speicherschicht auf Floatglas auf und bedeckt diese direkt mit der Ausleseschicht [Kap. 7]. Weiterhin konnte gezeigt werden, dass es möglich ist, den Faraday-Effekt einer Granatschicht als verstärkendes Element zu nutzen. Im anwendungstauglichen, integrierten Schichtsystem konnten die kostengünstig, mit dem Sol-Gel-Verfahren produzierten, Granate die strukturellen Anforderungen nicht erfüllen, da sich während der Herstellung Risse und Löcher gebildet haben. Bei der experimentellen Realisierung mit einer einkristallinen Granatschicht und einer RE/TM-Schicht konnte die prinzipielle Eignung des Schichtsystems demonstriert werden [Kap. 8].

Investigation of cadmium alternatives in thin-film coatings - art. no. 62860C

The health risks associated with the inhalation or ingestion of cadmium are well documented([1,2]). During the past 18 years, EU legislation has steadily been introduced to restrict its use, leaving a requirement for the development of replacement materials. This paper looks at possible alternatives to various cadmium II-VI dielectric compounds used in the deposition of optical thin-films for various opto-electronic devices. Application areas of particular interest are for infrared multilayer interference filter fabrication and solar cell industries, where cadmium-based coatings currently find widespread use. The results of single and multilayer designs comprising CdTe, CdS, CdSe and PbTe deposited onto group IV and II-VI materials as interference filters for the mid-IR region are presented. Thin films of SnN, SnO2, SnS and SnSe are fabricated by plasma assisted CVD, reactive RF sputtering and thermal evaporation. Examination of these films using FTIR spectroscopy, SEM, EDX analysis and optical characterisation methods provide details of material dispersion, absorption, composition, refractive index, energy band gap and layer thicknesses. The optimisation of deposition parameters in order to synthesise coatings with similar optical and semiconductor properties as those containing cadmium has been investigated. Results of environmental, durability and stability trials are also presented.

Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nonlinear refractive index measurements in antimony-sulfide glass films using a single beam nonlinear image technique

The nonlinear refractive index, n(2), of films based on the new glass system Sb(2)O(3)-Sb(2)S(3) was measured at 1064 nm with laser pulses of 15 ps, using a single-beam nonlinear image technique in presence of a phase object. The films were prepared from bulk glasses by RF-sputtering. A large value of n(2) = 3 x 10-(15) m(2)/W, which is three orders of magnitude larger than for CS(2), was determined. The result shows the strong potential of antimony-sulfide glass films for integrated nonlinear optics. (c) 2005 Elsevier B.V. All rights reserved.

Hardness and elastic modulus of carbon-germanium alloys

This work reports on the mechanical properties of germanium-rich amorphous carbon-germanium alloys prepared by RF sputtering of a germanium/graphite target under an argon/hydrogen atmosphere. Nano-hardness, elastic modulus and stress were investigated as a function of the carbon content. The stress, which is reduced by the incorporation of carbon, was related to the film structure and to the difference in the Ge-Ge and Ge-C bond length. Contrary to what was expected, the hardness and elastic modulus of the alloys are lower than the corresponding values for pure amorphous hydrogenated germanium film, which in turn has both properties also smaller than those of crystalline germanium. These properties are analyzed in terms of the structural properties of the films. (C) 2001 Elsevier B.V. B.V All rights reserved.