Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor

A new physically based classical continuous potential distribution model, particularly considering the channel center, is proposed for a short-channel undoped body symmetrical double-gate transistor. It involves a novel technique for solving the 2-D nonlinear Poisson's equation in a rectangular coordinate system, which makes the model valid from weak to strong inversion regimes and from the channel center to the surface. We demonstrated, using the proposed model, that the channel potential versus gate voltage characteristics for the devices having equal channel lengths but different thicknesses pass through a single common point (termed ``crossover point''). Based on the potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects (SCE), the effective subthreshold slope factor is mainly dictated by the potential close to the channel center rather than the surface. SCEs and drain-induced barrier lowering are also assessed using the proposed model and validated against a professional numerical device simulator.

ESTIMATION OF EVAPOTRANSPIRATION IN AN EXPERIMENTAL WATERSHED IN A DECIDUOUS FOREST OF SOUTH INDIA

Forested areas play a dominant role in the global hydrological cycle. Evapotranspiration is a dominant component most of the time catching up with the rainfall. Though there are sophisticated methods which are available for its estimation, a simple reliable tool is needed so that a good budgeting could be made. Studies have established that evapotranspiration in forested areas is much higher than in agricultural areas. Latitude, type of forests, climate and geological characteristics also add to the complexity of its estimation. Few studies have compared different methods of evapotranspiration on forested watersheds in semi arid tropical forests. In this paper a comparative study of different methods of estimation of evapotranspiration is made with reference to the actual measurements made using all parameter climatological station data of a small deciduous forested watershed of Mulehole (area of 4.5 km2 ), South India. Potential evapotranspiration (ETo) was calculated using ten physically based and empirical methods. Actual evapotranspiration (AET) has been calculated through computation of water balance through SWAT model. The Penman-Montieth method has been used as a benchmark to compare the estimates arrived at using various methods. The AET calculated shows good agreement with the curve for evapotranspiration for forests worldwide. Error estimates have been made with respect to Penman-Montieth method. This study could give an idea of the errors involved whenever methods with limited data are used and also show the use indirect methods in estimation of Evapotranspiration which is more suitable for regional scale studies.

A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor

In this work, for the first time, we present a physically based analytical threshold voltage model for omega gate silicon nanowire transistor. This model is developed for long channel cylindrical body structure. The potential distribution at each and every point of the of the wire is derived with a closed form solution of two dimensional Poisson's equation, which is then used to model the threshold voltage. Proposed model can be treated as a generalized model, which is valid for both surround gate and semi-surround gate cylindrical transistors. The accuracy of proposed model is verified for different device geometry against the results obtained from three dimensional numerical device simulators and close agreement is observed.

Analytical modeling of quantum threshold voltage for triple gate MOSFET

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved

Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Quantum capacitance in bilayer graphene nanoribbon

We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.

On the possible variation of the lightning striking distance as assumed in the IEC lightning protection standard as a function of structure height

The effect of structure height on the lightning striking distance is estimated using a lightning strike model that takes into account the effect of connecting leaders. According to the results, the lightning striking distance may differ significantly from the values assumed in the IEC standard for structure heights beyond 30m. However, for structure heights smaller than about 30m, the results show that the values assumed by IEC do not differ significantly from the predictions based on a lightning attachment model taking into account the effect of connecting leaders. However, since IEC assumes a smaller striking distance than the ones predicted by the adopted model one can conclude that the safety is not compromised in adhering to the IEC standard. Results obtained from the model are also compared with Collection Volume Method (CVM) and other commonly used lightning attachment models available in the literature. The results show that in the case of CVM the calculated attractive distances are much larger than the ones obtained using the physically based lightning attachment models. This indicates the possibility of compromising the lightning protection procedures when using CVM. (C) 2014 Elsevier B.V. All rights reserved.

Use of Data Driven Techniques for Short Lead Time Streamflow Forecasting in Mahanadi basin

Streamflow forecasts at daily time scale are necessary for effective management of water resources systems. Typical applications include flood control, water quality management, water supply to multiple stakeholders, hydropower and irrigation systems. Conventionally physically based conceptual models and data-driven models are used for forecasting streamflows. Conceptual models require detailed understanding of physical processes governing the system being modeled. Major constraints in developing effective conceptual models are sparse hydrometric gauge network and short historical records that limit our understanding of physical processes. On the other hand, data-driven models rely solely on previous hydrological and meteorological data without directly taking into account the underlying physical processes. Among various data driven models Auto Regressive Integrated Moving Average (ARIMA), Artificial Neural Networks (ANNs) are most widely used techniques. The present study assesses performance of ARIMA and ANNs methods in arriving at one-to seven-day ahead forecast of daily streamflows at Basantpur streamgauge site that is situated at upstream of Hirakud Dam in Mahanadi river basin, India. The ANNs considered include Feed-Forward back propagation Neural Network (FFNN) and Radial Basis Neural Network (RBNN). Daily streamflow forecasts at Basantpur site find use in management of water from Hirakud reservoir. (C) 2015 The Authors. Published by Elsevier B.V.

Unified Continuum Damage Model for Matrix Cracking in Composite Rotor Blades

This paper deals with modeling of the first damage mode, matrix micro-cracking, in helicopter rotor/wind turbine blades and how this effects the overall cross-sectional stiffness. The helicopter/wind turbine rotor system operates in a highly dynamic and unsteady environment leading to severe vibratory loads present in the system. Repeated exposure to this loading condition can induce damage in the composite rotor blades. These rotor/turbine blades are generally made of fiber-reinforced laminated composites and exhibit various competing modes of damage such as matrix micro-cracking, delamination, and fiber breakage. There is a need to study the behavior of the composite rotor system under various key damage modes in composite materials for developing Structural Health Monitoring (SHM) system. Each blade is modeled as a beam based on geometrically non-linear 3-D elasticity theory. Each blade thus splits into 2-D analyzes of cross-sections and non-linear 1-D analyzes along the beam reference curves. Two different tools are used here for complete 3-D analysis: VABS for 2-D cross-sectional analysis and GEBT for 1-D beam analysis. The physically-based failure models for matrix in compression and tension loading are used in the present work. Matrix cracking is detected using two failure criterion: Matrix Failure in Compression and Matrix Failure in Tension which are based on the recovered field. A strain variable is set which drives the damage variable for matrix cracking and this damage variable is used to estimate the reduced cross-sectional stiffness. The matrix micro-cracking is performed in two different approaches: (i) Element-wise, and (ii) Node-wise. The procedure presented in this paper is implemented in VABS as matrix micro-cracking modeling module. Three examples are presented to investigate the matrix failure model which illustrate the effect of matrix cracking on cross-sectional stiffness by varying the applied cyclic

Damage development in an armor ceramic under quasi-static indentation

The objective of the present study is to assess the capabilities of a recently developed mechanism-based model for inelastic deformation and damage in structural ceramics. In addition to conventional lattice plasticity, the model accounts for microcrack growth and coalescence as well as granular flow following comminution. The assessment is made through a coupled experimental/computational study of the indentation response of a commercial armor ceramic. The experiments include examinations of subsurface damage zones along with measurements of residual surface profiles and residual near-surface stresses. Extensive finite element computations are conducted in parallel. Comparisons between experiment and simulation indicate that the most discriminating metric in the assessment is the spatial extent of subsurface damage following indentation. Residual stresses provide additional validation. In contrast, surface profiles of indents are dictated largely by lattice plasticity and thus provide minimal additional insight into the inelastic deformation resulting from microcracking or granular flow. A satisfactory level of correlation is obtained using property values that are either measured directly or estimated from physically based arguments, without undue reliance on adjustable (nonphysical) parameters. © 2011 The American Ceramic Society.

Molecular/Cluster Statistical Thermodynamics Methods To Simulate Quasi-Static Deformations At Finite Temperature

The rapid evolution of nanotechnology appeals for the understanding of global response of nanoscale systems based on atomic interactions, hence necessitates novel, sophisticated, and physically based approaches to bridge the gaps between various length and time scales. In this paper, we propose a group of statistical thermodynamics methods for the simulations of nanoscale systems under quasi-static loading at finite temperature, that is, molecular statistical thermodynamics (MST) method, cluster statistical thermodynamics (CST) method, and the hybrid molecular/cluster statistical thermodynamics (HMCST) method. These methods, by treating atoms as oscillators and particles simultaneously, as well as clusters, comprise different spatial and temporal scales in a unified framework. One appealing feature of these methods is their "seamlessness" or consistency in the same underlying atomistic model in all regions consisting of atoms and clusters, and hence can avoid the ghost force in the simulation. On the other hand, compared with conventional MD simulations, their high computational efficiency appears very attractive, as manifested by the simulations of uniaxial compression and nanoindenation. (C) 2008 Elsevier Ltd. All rights reserved.

The calculation of acoustic shielding of engine noise by the Silent Aircraft Airframe

The Silent Aircraft airframe has a flying wing design with a large wing planform and a propulsion system embedded in the rear of the airframe with intake on the upper surface of the wing. In the present paper, boundary element calculations are presented to evaluate acoustic shielding at low frequencies. Besides the three-dimensional geometry of the Silent Aircraft airframe, a few two-dimensional problems are considered that provide some physical insight into the shielding calculations. Mean flow refraction effects due to forward flight motion are accounted for by a simple time transformation that decouples the mean-flow and acoustic-field calculations. It is shown that significant amount of shielding can be obtained in the shadow region where there is no direct line of sight between the source and observer. The boundary element solutions are restricted to low frequencies. We have used a simple physically-based model to extend the solution to higher frequencies. Based on this model, using a monopole acoustic source, we predict at least an 18 dBA reduction in the overall sound pressure level of forward-propagating fan noise because of shielding.

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.

Steady-state analytical model for the trench insulated gate bipolar transistor

A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.