Building the perfect 3D hologram

A new liquid crystal device structure has been developed using a vertically grown Multi-Wall Carbon NanoTube (MWCNT) as a 3D electrode structure, which allows complicated phase only hologram to be displayed using conventional liquid crystal materials. The nanotubes act as an individual electrode sites that generate an electric field profile, dictating the refractive index profile with the liquid crystal cell. Changing the electric field applied makes it possible to tune the properties to modulate the light in an ideal kinoform. A perfect 3D image can be generated by a computer generated hologram by using the diffraction of the light from the hologram pixels to create an optical wave front that appears to come from 3D object. A multilevel phase modulating device based on nematic LC's is also under progress, which will be used with the LC/CNT devices on an LCOS backplane to project a full 3D image from the kinoform.

Controllable Kerr nonlinearity with perfect transparency in the existence of spontaneously generated coherence

We investigate the Kerr nonlinearity of a V-type three-level atomic system where the upper two states decay outside to another state and hence spontaneous generated coherence may exist. It is shown that dark state and hence perfect transparency present under certain conditions. Meanwhile, the Kerr nonlinearity can be controlled by manipulation of the decay rates and the splitting of the two excited states. Therefore, enhanced Kerr nonlinearity without absorption can be obtained under proper parameters.

PGPRs and nitrogen-fixing legumes: a perfect team for efficient Cd phytoremediation?

Cadmium (Cd) is a toxic, biologically non-essential and highly mobile metal that has become an increasingly important environmental hazard to both wildlife and humans. In contrast to conventional remediation technologies, phytoremediation based on legume rhizobia symbiosis has emerged as an inexpensive decontamination alternative which also revitalize contaminated soils due to the role of legumes in nitrogen cycling. In recent years, there is a growing interest in understanding symbiotic legume rhizobia relationship and its interactions with Cd. The aim of the present review is to provide a comprehensive picture of the main effects of Cd in N-2-fixing leguminous plants and the benefits of exploiting this symbiosis together with plant growth promoting rhizobacteria to boost an efficient reclamation of Cd-contaminated soils.

Is the assumption of perfect channel-state information in fading channels a good assumption?

Fading channels, which are used as a model for wireless communication, are often analyzed by assuming that the receiver is aware of the realization of the channel. This is commonly justified by saying that the channel varies typically slowly with time, and the receiver is thus able to estimate it. However, this assumption is optimistic, since it is prima facie not clear whether the channel can be estimated perfectly. This paper investigates the quality of this assumption by means of the channel capacity. In particular, results on the channel capacity of fading channels are presented, both when the receiver is aware of the realization of the channel and when it is aware only of its statistics. A comparison of these results demonstrates that information- theoretic analyses of fading channels that are based on the assumption that the receiver is aware of the channel's realization can yield helpful insights, but have to be taken with a pinch of salt. ©2009 IEEE.

A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.