真空紫外光学薄膜及薄膜材料

概述了真空紫外(VUV)波段光学薄膜及薄膜材料的研究进展,金属Al膜因到短至80nm还能提供较高的反射率而得到普遍关注,在高真空和30nm/s左右沉积速率下沉积了保护层的金属Al膜在157nm处反射率可达90%。介质氧化物薄膜机械应力小,环境稳定性比氟化物薄膜好,在190nm以上波段应用较广泛,但在180nm以下波段吸收大大增加而应由氟化物薄膜取代。氟化物薄膜带宽大、吸收系数小,沉积了致密SiO2保护层的氟化物高反膜,在中心波长180nm处可得到接近99%的反射率,而且膜系的稳定性和抗激光损伤也大大提高。氟化物减反膜在157nm处可得到0.1%以下的反射率;到目前为止氟化物薄膜最好的沉积工艺是电阻热蒸发。

Techniques for fabrication of large-size graded reflectivity mirrors

According to the parameter requirements of a graded reflectivity mirror with a Gaussian profile, the layer structure and the mask pattern are designed using a graded-thickness middle layer. The mask and the automatic mask-switchover equipment are designed considering the actual requirement of the thin films and the specific deposit facility. The uniformity of the layer thickness is analyzed. The measurement results indicate that samples prepared with this technique are basically in accordance with the design parameter. The scattering effect between the material molecules and the mask, thickness errors, and the alignment error between the mask and the substrate are the main factors that influence the deposit result. (c) 2008 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3027595]

SiO_2薄膜折射率的准确拟合分析

精确的光学常数对于设计和制备高品质的光学薄膜非常重要,尤其是那些光学性能对折射率变化敏感的薄膜。SiO_2是一种常用的低折射率材料,因与常用基底折射率相近使其准确拟合有一定难度。实验通过离子束溅射制备了SiO_2单层膜。考虑测量时的误差和基底折射率的影响,采用透射率包络和反射率包络得到了SiO_2的折射率,并用所得折射率进行反演来对这两种途径在实际测量拟合过程中的准确性进行比对。分析表明,剩余反射率在实际的测量过程中误差更小,直接用测量镀膜前后基片的剩余反射率值可以更简便更准确地得到SiO_2的折射率,能达到10~(-2)的精度。

吸收杂质热辐射诱导光学薄膜破坏的热力机制

光学元件的破坏是限制高功率激光系统发展的主要问题,理解光学元件的破坏机制对于高功率激光系统的设计、运行参量选择以及器件技术发展有重要影响。以热辐射模型为基础研究了杂质吸收诱导光学薄膜破坏的热力过程。研究发现薄膜发生初始破坏所需时间很短,脉冲的大部分时间是引起薄膜发生更大的破坏。在考虑吸收杂质发生相变的情况下,计算了吸收杂质汽化对薄膜产生的蒸汽压力,论证了薄膜发生宏观破坏的可能性。此模型能很好地解释光学薄膜的平底坑破坏形貌。

Investigation on thermal stability of TiO2 films for application at high temperature

The thermal stability of electron beam deposited TiO2 monolayers and TiO2/SiO2 high reflectors (HR) during 300 to 1100 degrees C annealing is studied. It is found that the optical loss of film increases with the increase in annealing temperature, due to the phase change, crystallisation and deoxidising of film. Scattering loss dominates the optical property degradation of film below 900 degrees C, while the absorption is another factor at 1100 degrees C. The increase in refractive index and decrease in physical thickness of TiO2 layer shift the spectra of HR above 900 degrees C. The possible crack mechanism on the surface of HR during annealing is discussed. Guidance for application on high temperature stable optical coatings is given.

Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.

Rapport M/L de disques de galaxies issus de modèles CSPE et contrôle des contraintes mécaniques dans la conception de revêtements optiques

La thèse qui suit est organisée en deux volets: un premier volet portant sur les modèles de masse de galaxies et un second volet sur la conception de revêtements optiques et le contrôle de leurs propriétés mécaniques. Les modèles de masse présentés dans cette thèse ont été réalisés sur un sous-échantillon de dix galaxies de l'étude SINGS comprenant neuf galaxies normales et une galaxie naine. Ce travail visait à fixer le rapport masse-luminosité du disque à tout rayon en utilisant les résultats de modèles d'évolution galactique chimio-spectrophotométriques ajustés spécifiquement à chaque galaxie grâce à son profil de photométrie multi-bandes. Les résultats montrent que les disques stellaires tels que normalisés par les rapports masse-luminosité issus des modèles ont des masses cohérentes dans toutes les bandes étudiées de l'ultra-violet, du visible ainsi que du proche infrarouge (bandes FUV à IRAC2). Ces disques peuvent être considérés comme maximaux par rapport aux données cinématiques des galaxies étudiées. Ceci est dû au fait que le rapport M/L est plus élevé au centre que sur les bords. Les disques étant maximaux et physiquement justifiés, on ne peut dès lors ignorer les effets de composants tels que les bulbes ou les barres et les corrections nécessaires doivent être apportées aux profils de luminosité et de vitesses de rotation de la galaxie. Dans les travaux de la seconde partie, le logiciel en développement libre OpenFilters a été modifié afin de tenir compte des contraintes mécaniques dans la conception numérique de revêtements optiques. Les contraintes mécaniques dans les couches minces ont un effet délétère sur leurs performances optiques. Un revêtement destiné à rendre réflectives les lames d'un étalon Fabry-Perot utilisé en astronomie a été conçu et fabriqué afin d'évaluer les performances réelles de la méthode. Ce cas a été choisi à cause de la diminution de la finesse d'un étalon Fabry-Perot apporté par la courbure des lames sous l'effet des contraintes. Les résultats montrent que les mesures concordent avec les modèles numériques et qu'il est donc possible à l'aide de ce logiciel d'optimiser les revêtements pour leur comportement mécanique autant que pour leurs propriétés optiques.

Development and characterisation of solution processed vanadium oxide and transparent metal oxide thin films

Metal oxide thin films are important for modern electronic devices ranging from thin film transistors to photovoltaics and functional optical coatings. Solution processed techniques allow for thin films to be rapidly deposited over a range of surfaces without the extensive processing of comparative vapour or physical deposition methods. The production of thin films of vanadium oxide prepared through dip-coating was developed enabling a greater understanding of the thin film formation. Mechanisms of depositing improved large area uniform coverage on a number of technologically relevant substrates were examined. The fundamental mechanism for polymer-assisted deposition in improving thin film surface smoothness and long range order has been delivered. Different methods were employed for adapting the alkoxide based dip-coating technique to produce a variety of amorphous and crystalline vanadium oxide based thin films. Using a wide range of material, spectroscopic and optical measurement techniques the morphology, structure and optoelectronic properties of the thin films were studied. The formation of pinholes on the surface of the thin films, due to dewetting and spinodal effects, was inhibited using the polymer assisted deposition technique. Uniform thin films with sub 50 nm thicknesses were deposited on a variety of substrates controlled through alterations to the solvent-alkoxide dilution ratios and employing polymer assisted deposition techniques. The effects of polymer assisted deposition altered the crystallized VO thin films from a granular surface structure to a polycrystalline structure composed of high density small in-plane grains. The formation of transparent VO based thin film through Si and Na substrate mediated diffusion highlighted new methods for material formation and doping.

Patterning optically clear films: co-planar transparent and color-contrasted thin films from interdiffused electrodeposited and solution-processed metal oxides

Transparent thin films can now be site-selectively patterned and positioned on surface using mask-defined electrodeposition of one oxide and overcoating with a different solution-processed oxide, followed by thermal annealing. Annealing allows an interdiffusion process to create a new oxide that is entirely transparent. A primary electrodeposited oxide can be patterned and the secondary oxide coated over the entire substrate to form high color contrast coplanar thin film tertiary oxide. The authors also detail the phase formation and chemical state of the oxide and how the nature of the electrodeposited layer and the overlayer influence the optical clearing of the patterned oxide film.

Investigation on microstructure and optical properties of titanium dioxide coatings annealed at various temperature

TiO2 coatings were prepared on fused silica with conventional electron beam evaporation deposition. After TiO2 thin films were annealed at different temperatures for 4 h, several properties were investigated by X-ray diffraction (XRD), spectrometer.. photoelectron spectroscopy (XPS) and AFM. It was found that with the annealing temperature increasing, the transmittance of TiO2 coatings decreased, and the cutoff wavelength shifted to long wavelength in near ultraviolet band. Especially, when coatings were annealed at high temperature, the optical loss is very serious, which can be attributed to the scattering and the absorption of TiO2 coatings. XRD patterns revealed that only anatase phase was observed in TiO2 coatings regardless of the different annealing temperatures. XPS results indicated that the fine chemical shift of TiO2 2p(1/2) should be attributed to existence of oxygen vacancies around Ti+4 ion. The investigation on surface morphology by AFM showed that the RMS of titania thin films gradually increases from less than 0.40 nm to 5.03 nm and it should be ascribed to the growth of titanium dioxide grain size with the increase of annealing temperature. (C) 2005 Elsevier B.V. All rights reserved.

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.