飞秒激光用多层介质膜脉宽压缩光栅的设计

以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础，给出了0．8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计；设计采用H3L（HL）^9H0．5L2．4H的多层介质膜为基底，当刻蚀后表面浮雕结构的占宽比为0．35，线密度为1480线／mm，槽深为0．2μm，顶层HfO2的剩余厚度为0．15μm时，对于Littrow角度（36．7°）和TE波模式入射的衍射光栅其-1级衍射效率达到95％以上．

Investigations on long distance transportation of fish. 4. A comparative study of the performance of expanded polystyrene slabs and multi-layer gunny (jute) fabric as insulants

A comparative study of the insulation efficiencies of expanded polystyrene slabs and multi-layer gunny fabric in long distance transportation of fresh iced fish was made. Used plywood boxes (second hand tea chests) were employed as containers and the experiments conducted between Kakinada and Calcutta. All the three insulants tried, namely, 25.4 mm thick expanded polystyrene slab, four and two layer gunny (jute) fabric, all sealed in 150 gauge polythene sheets, showed comparable insulation efficiencies, considering total bacterial counts, organoleptic qualities and TMA and TVN values of the transported fish as parameters.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.

Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy and characterized by photoluminescence (PL). For both single- and multi-layer QDs, PL intensity of the first excited state is larger than that of the ground state at 15 K. Conversely, at room temperature (RT), PL intensity of the first excited state is smaller than that of the ground state. This result is explained by the phonon bottleneck effect. To the ground state, the PL intensities of the multi-layer QDs are larger than that of the single-layer QDs at 15 K, while the intensities are smaller than that of the single-layer QDs at RT. This is due to the defects in the multi-layer QD samples acting as the nonradiative recombination centers. The inter-diffusion of Ga and In atoms in the growth process of multi-layer QDs results in the PL blueshift of the ground state and broadening of the full-width at half-maximum (FWHM), which can be avoided by decreasing the spacers' growth temperature. At the spacers' growth temperature of 520degreesC, we have prepared the 5-layer QDs which emit near 1.3 mum with a FWHM of 31.7 meV at RT, and 27.9 meV at 77 K. (C) 2002 Published by Elsevier Science B.V.

Giant Goos-Hanchen displacement enhanced by dielectric film in frustrated total internal reflection configuration

It is predicted that the Goos-Hanchen displacement in the usual frustrated total internal reflection configuration can be resonantly enhanced greatly by coating a dielectric thin film onto the surface of the first prism when the angle of incidence is larger than the critical angle for total reflection at the prism-vacuum interface and is smaller than but close to the critical angle for total reflection at the prism-film interface. Theoretical analysis shows that the displacement of transmitted beam is about half the displacement of reflected beam in the thick limit of the vacuum gap between the two prisms. This is to be compared with the relation in the usual symmetric double-prism configuration that the displacement of transmitted beam is equal to the displacement of reflected beam. Numerical simulations for a Gaussian incident beam of waist width of 100 wavelengths reveal that when the dielectric thin film is of the order of wavelength in thickness, both the reflected and transmitted beams maintain well the shape of the incident beam in the thick limit of the vacuum gap. So largely enhanced displacements would lead to applications in optical devices and integrated optics. (c) 2007 American Institute of Physics.

Large positive and negative lateral displacements from total internal reflection configuration with a weakly absorbing dielectric film

It is theoretically shown that the simultaneously large positive and negative lateral displacements will appear when the resonant condition is satisfied for a TE-polarized light beam reflected from the total internal reflection configuration with a weakly absorbing dielectric film. Appearance of the enhanced negative lateral displacement is relative to the incidence angle, absorption of the thin Elm and its thickness. If we select an appropriate weakly absorbing dielectric film and its thickness, the simultaneously enhanced positive and negative lateral displacements will appear at different resonant angles. These phenomena may lead to convenient measurements and interesting applications in optical devices.

Coupled heat and moisture transfer in multi-layer building materials

A dynamic mathematical model for simulating the coupled heat and moisture migration through multilayer porous building materials was proposed. Vapor content and temperature were chosen as the principal driving potentials. The discretization of the governing equations was done by the finite difference approach. A new experimental set-up was also developed in this study. The evolution of transient temperature and moisture distributions inside specimens were measured. The method for determining the temperature gradient coefficient was also presented. The moisture diffusion coefficient, temperature gradient coefficient, sorption–desorption isotherms were experimentally evaluated for some building materials (sandstone and lime-cement mortar). The model was validated by comparing with the experimental data with good agreement. Another advantage of the method lies in the fact that the required transport properties for predicting the non-isothermal moisture flow only contain the vapor diffusion coefficient and temperature gradient coefficient. They are relatively simple, and can be easily determined.