瞬态C-V方法对Al_xGa_(1-x)As中DX中心的研究

于2010-11-23批量导入

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

Influencia del suelo y la fertilización nitrogenada sobre el contenido cuali - cuantitativo de alcaloides de Festuca c.v. El Palenque

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Energy levels, radiative rates and electron impact excitation rates for transitions in He-like Li II, Be III, B IV and C V

We report calculations for energy levels, radiative rates and electron impact excitation rates for transitions in He-like Li II, Be III, B IV and C V. grasp (general-purpose relativistic atomic structure package) is adopted for calculating energy levels and radiative rates. For determining the collision strengths and subsequently the excitation rates, the Dirac atomic R-matrix code (darc) is used. Oscillator strengths, radiative rates and line strengths are reported for all E1, E2, M1 and M2 transitions among the lowest 49 levels of each ion. Collision strengths have been averaged over a Maxwellian velocity distribution and the effective collision strengths so obtained are reported over a wide temperature range up to 10(6) K. Comparisons have been made with similar data obtained from the flexible atomic code (FAC) to highlight the importance of resonances, included in calculations from darc, in the determination of effective collision strengths. Discrepancies between the collision strengths from darc and fac, particularly for weak transitions and at low energies, have also been discussed. Additionally, lifetimes are also listed for all calculated levels of the above four ions.

The effect of ionization on the populations of excited levels of C IV and C V in tokamak edge plasmas

The main populating and depopulating mechanisms of the excited energy levels of ions in plasmas with densities <10²³-10²⁴ m^-3 are electron collisional excitation from the ion's ground state and radiative decay, respectively, with the majority of the electron population being in the ground state of the ionization stage. Electron collisional ionization is predominately expected to take place from one ground state to that of the next higher ionization stage. However, the question arises as to whether, in some cases, ionization can also affect the excited level populations. This would apply particularly to those cases involving transient events such as impurity influxes in a laboratory plasma. An analysis of the importance of ionization in populating the excited levels of ions in plasmas typical of those found in the edge of tokamaks is undertaken for the C IV and C V ionization stages. The emphasis is on those energy levels giving rise to transitions of most use for diagnostic purposes (n ≤ 5). Carbon is chosen since it is an important contaminant of JET plasmas; it was the dominant low Z impurity before the installation of the ITER-like wall and is still present in the plasma after its installation. Direct electron collisional ionization both from and to excited levels is considered. Distorted-wave flexible atomic code calculations are performed to generate the required ionization cross sections, due to a lack of atomic data in the literature. Employing these data, ionization from excited level populations is not found to be significant in comparison with radiative decay. However, for some energy levels, ionization terminating in the excited level has an effect in the steady-state of the order of the measurement errors (±10%). During transient events, ionization to excited levels will be of more importance and must be taken into account in the calculation of excited level populations. More accurate atomic data, including possible resonance contributions to the cross sections, would tend to increase further the importance of these effects. 

Autre exemplaire de la relation contenue dans le ms. français 5094. Cet exemplaire est dédié à Charles de Bourbon, celui qui devait bientôt être nommé connétable de France par le roi François Ier. La dédicace est en 12 vers. Premier vers (fol. C. v°).

Même ornementation, mêmes armoiries que dans le ms. français 5094. « Très noble duc de Bourbon et d'Auvergne,... ».

Autre exemplaire de la relation contenue dans le ms. français 5094. Cet exemplaire est dédié à Jean d'Albret, sire d'Orval et comte de Rethel par sa femme, Charlotte de Bourgogne. La dédicace est en 12 vers. Premier vers (fol. C. v°).

Même ornementation, mêmes armoiries que dans le ms. français 5094. « Noble conte de Ratel, Sr d'Orval, qui d'Albret portés nom... ».

Estudio sobre los factores que influyen en el ausentismo por incapacidad por enfermedad en los trabajadores de la empresa conductores Monterrey, S. A. de C. V. de Monterrey, Nuevo León

Tesis (Maestría en Trabajo Social) UANL.