The Effects of Grain Size Distribution and Structure on Mechanical Behavior of Silt

Abstract: In order to investigate the effects of the grain size distribution and the micro-structure of soils on the mechani- cal characteristics, some static triaxial compression tests were carried out, and then the relationship of stress-strain and the strength behavior of silty sand were compared among undisturbed samples with different grain size distribution, undis- turbed and remolded samples with the same grain size distribution, and reconstituted samples (or called mixed samples) with different grain size distribution. The effects of grain size distribution and structure on the mechanic behavior of silty sands were mainly analyzed. It is shown that the obvious differences of the mechanical characteristics between undis- turbed soils and remolded soils are caused by the differences of soil structures. Although the grain size distribution are different between two soil samples, their mechanical characteristics may be close to each other, or may have obvious differences because of the effects of micro-structure.

Size distribution of heavy mineral grains in some modern Nile Delta coastal sands, Egypt

This study includes determination and discussion of the texture and heavy mineral compositions of some modem Nile Delta coastal sands (river, coastal dune, beach-face, and nearshore marine) in order to delineate the process and factors that regulate the size distribution of heavy mineral grains comprising these coastal sands. Textural analysis of unseparated bulk samples indicate that the examined four types of sands differ in their mean grain sizes and degree of sorting. However, analysis of size distribution curves of 10 heavy mineral species or group of species in the four environments having the same general shape and nearly similar in that general order of arrangement. However, these curves vary both in median sizes and sorting. The size distribution of a heavy mineral in the Nile Delta coastal sands appear to depend on: (1) range of grain size fractions in each sample, (2) relative availability of heavy mineral in each size grade of the sample, (3) specific gravity of minerals comprising these sands, and (4) some other unknown factor or factors. Results of size measurement of heavy minerals indicated that increasing specific gravity is accompanied by increasing fineness of the heavy minerals. This study may be useful in search for marine placers and understanding the processes of grain-sorting on the sea beaches.

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Size distributions of quantum islands on stepped substrates

The size distributions of self-assembled quantum islands on stepped substrates are studied using kinetic Monte Carlo simulations. It is found that the energy barrier E-SW between the step and the terrace region is the key factor in affecting the size distribution of islands. With small E-SW (<= 0.1 eV), lines of uniform islands can be obtained at relative low surface coverage. As the surface coverage is increased, wirelike islands can be obtained. Scaling behavior is obeyed for the size distributions of the wirelike islands. When the size distributions are separated into their width and length components, however, scaling is only observed in the length distribution of the wirelike islands. With larger E-SW, the size distribution of islands shows a clear bimodal size distribution and anomalous growth temperature dependent island size evolutions are observed. The simulation results reproduce qualitatively the phenomena observed in the cases of InAs islands grown on stepped GaAs substrates. (c) 2009 American Institute of Physics. [doi:10.1063/1.3248367]

Thermal redistribution of photocarriers between bimodal quantum dots

We study the photoluminescence (PL) properties of InAs/GaAs self-assembled quantum dots (QDs) by varying excitation power and temperature. Excitation power-dependent PL shows that there exists bimodal size distribution in the QD ensemble. Thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative PL intensity. Based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained. (C) 2001 American Institute of Physics.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.