Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs

We report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively Q-switched microchip Yb:YAG (where YAG is yttrium aluminum garnet) lasers with a saturable absorber GaAs. We observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. We modify the multimode rate equations to account for nonlinear absorption due to GaAs in the presence of spatial hole burning. We perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.

Observation of antiphase states in a passively Q-switched multimode microchip Yb : YAG laser with a GaAs saturable absorber

Antiphase dynamics has been observed experimentally for the laser modes operation in a laser-diode-pumped Q-switched microchip Yb:YAG laser with GaAs as a saturable absorber in the presence of spatial hole-burning. The Q-switched pulses sequences of two modes at different pump power have been obtained. The experimental results have shown that the pulses sequences displayed classic antiphase dynamics. (C) 2003 Elsevier B.V. All rights reserved.

Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.

用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模

制作了一种新型的半导体可饱和吸收镜--表面态型半导体可饱和吸收镜.用表面态型半导体可饱和吸收镜作为被动锁模吸收体实现了半导体端面泵浦Yb∶YAG激光器被动调Q锁模.在泵浦功率仅有1.4 W的情况下,获得了调Q锁模脉冲序列,锁模平均输出功率1 mW,锁模脉冲重复频率200 MHz.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

表面态型半导体可饱和吸收镜实现Yb:YAG激光器被动锁模

制作了一种新型的半导体可饱和吸收镜:表面态型半导体可饱和吸收镜.用表面态型半导体可饱和吸收镜作为被动锁模吸收体,实现了半导体端面泵浦Yb:YAG激光器被动连续锁模.在泵浦功率为10W时,获得了连续锁模脉冲序列,重复频率200MHz,锁模脉冲平均输出功率为70mW.在未加任何色散补偿的情况下,脉冲宽度为4.35ps.

Stable mode-locking in an Yb:YAG laser with a fast SESAM

Stable mode-locking in a diode-pumped Yb:YAG laser was obtained with a very fast semiconductor saturable absorber mirror (SESAM). The pulse width was measured to be 4 ps at the central wavelength of 1047 nm. The average power was 200 mW and the repetition rate was 200 MHz.

Diferenciação de osteoblastos cultivados sobre superfícies de titânio modificados por irradiação com laser Yb: YAG pulsado de alta potencia

Pós-graduação em Reabilitação Oral - FOAR

Estudo in vitro da interação de titânio irradiado por feixe de laser Yb:YAG com e sem recobrimento de apatitas, empregando-se cultura de células estaminais humanas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Implantes nanotopograficamente modificados pela ação do laser Yb-YAG

Titanium has proven its suitability as an implant material in surgery over many years. Excellent biocompatibility and corrosion resistance are outstanding features. Implant surfaces always causes concern and interest in scientific communities, due to its close relationship with the time required for osseointegration. Surface modification can be performed by several methods, being laser irradiation one of them. Titanium implants with two different surfaces were inserted in rabbits: Group I (G-I: machined surface, control group), and group II (G-II: laser irradiated, test group) being processed 30 and 60 days after surgery for histological analysis. Surface characterization was performed with SEM-EDS, contact angle measurement, and mean roughness (Ra) parameters. Surface analysis in the GII group showed a nanomorphology affected by melt and quick solidification zones following laser irradiation (SEM), as well as total wettability and Ra mean values significantly higher than in the G-I group. The laser treatment resulted in a homogenized, porous surface, with increased surface area and volume. Histological analysis of bone-implant contact linear extension (BIC) showed better results in G-II at 30 days (39.26 ± 18.23 and 68.41 ± 13.68 for G-I and G-II groups, respectively). Titanium implants modified by laser irradiation showed important features that may accelerate early osseointegration.

Osteoblast differentiation is enhanced by a nano-to-micro hybrid titanium surface created by Yb:YAG laser irradiation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electronic and thermal lensing in diode end-pumped Yb:YAG laser rods and discs

The lensing effects in diode end-pumped Yb:YAG laser rods and discs are studied. Two mechanisms of refractive-index changes are taken into account, thermal and electronic (due to the difference between the excited- and ground-state Yb polarisabilities), as well as pump-induced deformation of the laser crystal. Under pulsed pumping, the electronic lensing effect prevails over the thermal one in both rods and discs. In rods pumped by a highly focused cw beam, the dioptric power of the electronic lens exceeds that of the thermal lens, whereas in discs steady-state lensing is predominantly due to the thermal mechanism. © 2009 Kvantovaya Elektronika and Turpion Ltd.

Population lensing vs thermal lensing in Yb:YAG rods and disks

The induced lenses in the Yb:YAG rods and disks end-pumped by a Gaussian beam were analyzed both analytically and numerically. The thermally assisted mechanisms of the lens formation were considered to include: the conventional volume thermal index changes ("dn/dT"), the bulging of end faces, the photoelastic effect, and the bending (for a disk). The heat conduction equations (with an axial heat flux for a disk and a radial heat flux for a rod), and quasi-static thermoelastic equations (in the plane-stress approximation with free boundary conditions) were solved to find the thermal lens power. The population rate equation with saturation (by amplified spontaneous emission or an external wave) was examined to find the electronic lens power in the active elements.