Projecte d'instal·lació de caldera de vapor de 5.000 kg/h i serveis auxiliars per [a] una empresa situada a Vic

L’empresa RUSCALLEDA, S.L., ubicada a la localitat de Vic, es dedica a l’elaboració deproductes alimentaris. La instal·lació actual de generació de calor utilitza una caldera antiga de combustible líquid i té una capacitat de producció de vapor de 1.500 kg/h. A causa de la demanda creixent de productes semielaborats, l'empresa vol instal·lar tres unitats noves de la línia final de productes semielaborats. Aquestes noves unitats tindrien un considerable consum d’energia calorífica en forma de vapor i requeririen actualitzar la instal·lació actual de producció i distribució de calor. L’objecte del projecte és la instal·lació d’un segon generador de vapor que sigui capaç d’alimentar la instal·lació actual més l’ampliació, quedant el generador actual en paral·lel per ser utilitzat en cas d’emergència

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) = I0¿exp(¿P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature.

Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition

Linear and nonlinear optical properties of silicon suboxide SiOx films deposited by plasma-enhanced chemical-vapor deposition have been studied for different Si excesses up to 24¿at.¿%. The layers have been fully characterized with respect to their atomic composition and the structure of the Si precipitates. Linear refractive index and extinction coefficient have been determined in the whole visible range, enabling to estimate the optical bandgap as a function of the Si nanocrystal size. Nonlinear optical properties have been evaluated by the z-scan technique for two different excitations: at 0.80¿eV in the nanosecond regime and at 1.50¿eV in the femtosecond regime. Under nanosecond excitation conditions, the nonlinear process is ruled by thermal effects, showing large values of both nonlinear refractive index (n2 ~ ¿10¿8¿cm2/W) and nonlinear absorption coefficient (ß ~ 10¿6¿cm/W). Under femtosecond excitation conditions, a smaller nonlinear refractive index is found (n2 ~ 10¿12¿cm2/W), typical of nonlinearities arising from electronic response. The contribution per nanocrystal to the electronic third-order nonlinear susceptibility increases as the size of the Si nanoparticles is reduced, due to the appearance of electronic transitions between discrete levels induced by quantum confinement.

Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich) silicon nitride. The competition between these two deposition phenomena leads finally to very high deposition rates (100 nm/min) for low NH3/SiH4 gas ratio (R¿0.1). Moreover, complex variations of NIDOS film properties are evidenced and related to the dual behavior of the nitrogen atom into silicon, either n-type substitutional impurity or insulative intersticial impurity, according to the Si¿N atomic bound. Finally, the use of NIDOS deposition for the realization of microelectromechanical systems is investigated.

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

We present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c‐axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c‐axis parallel to the substrate surface and another layer oriented at random

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) = I0¿exp(¿P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature.

Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures

Highly transparent and stoichiometric boron nitride (BN) films were deposited on both electrodes (anode and cathode) of a radio-frequency parallel-plate plasma reactor by the glow discharge decomposition of two gas mixtures: B2H6-H2-NH3 and B2H6-N2. The chemical, optical, and structural properties of the films, as well as their stability under long exposition to humid atmosphere, were analyzed by x-ray photoelectron, infrared, and Raman spectroscopies; scanning and transmission electron microscopies; and optical transmittance spectrophotometry. It was found that the BN films grown on the anode using the B2H6-H2-NH3 mixture were smooth, dense, adhered well to substrates, and had a textured hexagonal structure with the basal planes perpendicular to the film surface. These films were chemically stable to moisture, even after an exposition period of two years. In contrast, the films grown on the anode from the B2H6-N2 mixture showed tensile stress failure and were very unstable in the presence of moisture. However, the films grown on the cathode from B2H6-H2-NH3 gases suffered from compressive stress failure on exposure to air; whereas with B2H6-N2 gases, adherent and stable cathodic BN films were obtained with the same crystallographic texture as anodic films prepared from the B2H6-H2-NH3 mixture. These results are discussed in terms of the origin of film stress, the effects of ion bombardment on the growing films, and the surface chemical effects of hydrogen atoms present in the gas discharge.

Computer-aided procedure for optimization of layer thickness uniformity in thermal evaporation physical vapor deposition chambers for lens coating

A computer-aided method to improve the thickness uniformity attainable when coating multiple substrates inside a thermal evaporation physical vapor deposition unit is presented. The study is developed for the classical spherical (dome-shaped) calotte and also for a plane sector reversible holder setup. This second arrangement is very useful for coating both sides of the substrate, such as antireflection multilayers on lenses. The design of static correcting shutters for both kinds of configurations is also discussed. Some results of using the method are presented as an illustration.

Queijo gorgonzola fabricado com leite pasteurizado por ejetor de vapor e HTST: parâmetros físico-químicos e sensoriais

Este trabalho teve como objetivo avaliar a influência de dois sistemas de pasteurização (High Temperature Short Time ¾ HTST¾ e ejetor de vapor) nas características físico-químicas e sensoriais do queijo tipo Gorgonzola. As coletas de amostras de queijo e análises foram realizadas aos 5, 25, 45, 65 e 85 dias de maturação. Durante o período de maturação ocorreu aumento gradual de pH, sal/umidade e índice de acidez nos dois tratamentos. Os queijos fabricados com leite pasteurizado pelo sistema HTST obtiveram valores médios de pH superiores aos dos queijos fabricados com leite pasteurizado pelo sistema ejetor de vapor; os queijos fabricados com leite pasteurizado pelo sistema ejetor de vapor, obtiveram teores de índice de acidez e metilcetonas superiores aos dos queijos fabricados com leite pasteurizado pelo sistema HTST, indicando maior atividade lipolítica nesses queijos. Pela análise sensorial realizada aos 65 dias de maturação, pode se observar que não houve diferença significativa entre os tratamentos em relação à aparência, cor, consistência, textura e sabor. Porém foi observada diferença significativa com relação ao desenvolvimento do mofo e aroma. Os queijos fabricados com leite pasteurizado pelo sistema ejetor de vapor apresentaram maior atividade lipolítica e massa mais macia e fechada.

De la industrialització de les comarques de Girona al vapor Burés

Aquest article vol mostrar que la industrialització de Catalunya també va ser important a les comarques properes a la ciutat de Girona, especialment a la vall d’Anglès, ja que en aquesta població es conserva el vapor Burés, una màquina de vapor del principi del segle XX en molt bon estat. L'article es presenta en un to divulgador amb ànim de provocar anàlisis mes rigoroses dels temes tractats. En aquest sentit, l'apartat de la descripció tècnica del vapor Burés pretén estimular el seu estudi amb mes profunditat. Finalment, es fan un seguit de propostes, des de ben simples fins a mes agosarades, que caldria tenir en compte per avançar en una bona proposta d'ús públic dels elements patrimonials relacionats amb el vapor Burés

Water vapor tightness of packages: methods and optimizing

Työn tarkoituksena oli testata jo tutkimuskeskuksella käytössä ollutta ja tutkimuskeskukselle tässä työssä kehitettyä pakkauksen vesihöyrytiiveyteen liittyvää mittausmenetelmää. Saatuja tuloksia verrattiin keskenään sekä materiaalista mitattuihin arvoihin. Elintarvikepakkauksia tutkittiin myös kosteussensoreiden, säilyvyyskokeen sekä kuljetussimuloinnin avulla. Optimoinnilla tutkittiin pakkauksen muodon vaikutusta vesihöyrytiiveyteen. Pakkauksen vesihöyrynläpäisyn mittaamiseen kehitetty menetelmä toimi hyvin ja sen toistettavuus oli hyvä. Verrattaessa sitä jo olemassa olleeseen menetelmään tulokseksi saatiin, että uusi menetelmä oli nopeampi ja vaati vähemmän työaikaa, mutta molemmat menetelmät antoivat hyviä arvoja rinnakkaisille näytteille. Kosteussensoreilla voitiin tutkia tyhjän pakkauksen sisällä olevan kosteuden muutoksia säilytyksen aikana. Säilyvyystesti tehtiin muroilla ja parhaan vesihöyrysuojan antoivat pakkaukset joissa oli alumiinilaminaatti- tai metalloitu OPP kerros. Kuljetustestauksen ensimmäisessä testissä pakkauksiin pakattiin muroja ja toisessa testissä nuudeleita. Kuljetussimuloinnilla ei ollutvaikutusta pakkausten sisäpintojen eheyteen eikä siten pakkausten vesihöyrytiiveyteen. Optimoinnilla vertailtiin eri muotoisten pakkausten tilavuus/pinta-ala suhdetta ja vesihöyrytiiveyden riippuvuutta pinta-alasta. Optimaalisimmaksi pakkaukseksi saatiin pallo, jonka pinta-ala oli pienin ja materiaalin sallima vesihöyrynläpäisy suurin ja vesihöyrybarrierin määrä pienin.

SiC-Based MIS gas sensor for high water vapor environments

In this work we will prove that SiC-based MIS capacitors can work in environments with extremely high concentrations of water vapor and still be sensitive to hydrogen, CO and hydrocarbons, making these devices suitable for monitoring the exhaust gases of hydrogen or hydrocarbons based fuel cells. Under the harshest conditions (45% of water vapor by volume ratio to nitrogen), Pt/TaOx/SiO2/SiC MIS capacitors are able to detect the presence of 1 ppm of hydrogen, 2 ppm of CO, 100 ppm of ethane or 20 ppm of ethene, concentrations that are far below the legal permissible exposure limits.

Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition

The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

A natureza das substâncias de referência na avaliação de massas molares de resinas PBLH por meio de cromatografia de exclusão por tamanho e osmometria de pressão de vapor

The SEC and VPO behaviour of hydroxyl-terminated polybutadiene resins was investigated using toluene as solvent and polybutadiene and polystyrene as standards. The results show that molar mass obtained depend on the nature of the standards used in the calibration, specialy in SEC analysis.