A microbial fuel cell in contaminated ground delineated by electrical self-potential and normalized induced polarization data

There is a growing interest in the use of geophysical methods to aid investigation and monitoring of complex biogeochemical environments, for example delineation of contaminants and microbial activity related to land contamination. We combined geophysical monitoring with chemical and microbiological analysis to create a conceptual biogeochemical model of processes around a contaminant plume within a manufactured gas plant site. Self-potential, induced polarization and electrical resistivity techniques were used to monitor the plume. We propose that an exceptionally strong (>800 mV peak to peak) dipolar SP anomaly represents a microbial fuel cell operating in the subsurface. The electromagnetic and electrical geophysical data delineated a shallow aerobic perched water body containing conductive gasworks waste which acts as the abiotic cathode of microbial fuel cell. This is separated from the plume below by a thin clay layer across the site. Microbiological evidence suggests that degradation of organic contaminants in the plume is dominated by the presence of ammonium and its subsequent degradation. We propose that the degradation of contaminants by microbial communities at the edge of the plume provides a source of electrons and acts as the anode of the fuel cell. We hypothesize that ions and electrons are transferred through the clay layer that was punctured during the trial pitting phase of the investigation. This is inferred to act as an electronic conductor connecting the biologically mediated anode to the abiotic cathode. Integrated electrical geophysical techniques appear well suited to act as rapid, low cost sustainable tools to monitor biodegradation.

Glimpsing regular lattice arrangements of primary rat hippocampal astrocytes on ultra-thin nodes of Parylene-C

In our seminal work, we reported how the biomaterial Parylene-C has the unique ability to coerce neurons and glial cells to migrate to and then grow in straight lines along serum coated rectangular parylene-C structures mounted on an oxidised silicon substrate. In this brief communication, we report how astrocyte cell bodies, from the dissociated postnatal rat hippocampus, can now to be successfully localised on an ultra-thin 13nm layer of parylene-C mounted on oxidised silicon (Figure 1). What is extremely interesting about this finding is that the astrocyte processes extended mainly in horizontal and vertical directions from the cell body thus creating a regular lattice network of individual cells. In addition, they comfortably extended a 50μm gap (equivalent to ~ 10 cell body diameters) to connect to adjacent astrocytes on neighbouring Parylene-C structures. This was found to occur repeatedly on circular geometries of 20μm diameter. In comparison to our previous work [1], we have decreased the thickness of the parylene-C structures by a factor of 10, to allow such technology to be able to be utilised for passive electrode design that requires extremely thin structures such as these. Thus, being able to culture astrocytes in regular lattice networks will pave the way for precise monitoring and stimulation of such ensembles via multi-electrode arrays, allowing a closer insight into their dynamic behaviour and their network properties.

Influência da smear layer e sua espessura na adesão e citotoxicidade de um cimento de ionômero de vidro modificado por resina

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Nanoscale effects and applications of self-organized nanostructured thin films

A nanostructured thin film is a thin material layer, usually supported by a (solid) substrate, which possesses subdomains with characteristic nanoscale dimensions (10 ~ 100 nm) that are differentiated by their material properties. Such films have captured vast research interest because the dimensions and the morphology of the nanostructure introduce new possibilities to manipulating chemical and physical properties not found in bulk materials. Block copolymer (BCP) self-assembly, and anodization to form nanoporous anodic aluminium oxide (AAO), are two different methods for generating nanostructures by self-organization. Using poly(styrene-block-methyl methacrylate) (PS-b-PMMA) nanopatterned thin films, it is demonstrated that these polymer nanopatterns can be used to study the influence of nanoscale features on protein-surface interactions. Moreover, a method for the directed assembly of adsorbed protein nanoarrays, based on the nanoscale juxtaposition of the BCP surface domains, is also demonstrated. Studies on protein-nanopattern interactions may inform the design of biomaterials, biosensors, and relevant cell-surface experiments that make use of nanoscale structures. In addition, PS-b-PMMA and AAO thin films are also demonstrated for use as optical waveguides at visible wavelengths. Due to the sub-wavelength nature of the nanostructures, scattering losses are minimized, and the optical response is amenable to analysis with effective medium theory (EMT). Optical waveguide measurements and EMT analysis of the films’ optical anisotropy enabled the in situ characterization of the PS-b-PMMA nanostructure, and a variety of surface processes within the nanoporous AAO involving (bio)macromolecules at high sensitivity.

Determination of elastic modulus of thin coating materials using nanoindentation and finite element analysis

A deconvolution method that combines nanoindentation and finite element analysis was developed to determine elastic modulus of thin coating layer in a coating-substrate bilayer system. In this method, the nanoindentation experiments were conducted to obtain the modulus of both the bilayer system and the substrate. The finite element analysis was then applied to deconvolve the elastic modulus of the coating. The results demonstrated that the elastic modulus obtained using the developed method was in good agreement with that reported in literature.

Improving the hydrogen gas sensing performance of Pt/MoO3 nanoplatelets using a nano thick layer of La2O3

In this paper, we present how a thin RF sputtered layer of lanthanum oxide (La2O3) can alter electrical and improve hydrogen gas sensing characteristics of Pt/molybdenum oxide (MoO3) nanostructures Schottky diodes. We derived the barrier height, ideality factor and dielectric constant from the measured I–V characteristics at operating temperatures in the range of 25–300 ◦C. The dynamic response, response and recovery times were obtained upon exposure to hydrogen gas at different concentrations. Analysis of the results indicated a substantial improvement to the voltage shift sensitivity of the sensors incorporating the La2O3 layer. We associate this enhancement to the formation of numerous trap states due to the presence of the La2O3 thin film on the MoO3 nanoplatelets. These trap states increase the intensity of the dipolar charges at the metal–semiconductor interface, which induce greater bending of the energy bands. However, results also indicate that the presence of La2O3 trap states also increases response and recover times as electrons trapping and de-trapping processes occur before they can pass through this thin dielectric layer.

Atomic layer-by-layer Co3O4/graphene composite for high performance lithium-ion batteries

An "atomic layer-by-layer" structure of Co3O4/graphene is developed as an anode material for lithium-ion batteries. Due to the atomic thickness of both the Co3O4 nanosheets and the graphene, the composite exhibits an ultrahigh specific capacity of 1134.4 mAh g-1 and an ultralong life up to 2000 cycles at 2.25 C, far beyond the performances of previously reported Co3O4/C composites.

Compositionally and structurally modulated Pb(Mg1/3Nb2/3)O3-PbTiO3 relaxor thin films for microactuator application

Thin films of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(x = 0.1 to 0.3) (PMN-PT) were successfully grown on the platinum coated silicon substrate by pulsed excimer laser ablation technique. A thin template layer of LaSr0.5Co0.5O3 (LSCO) was deposited on platinum substrate prior to the deposition of PMN-PT thin films. The composition and the structure of the films were modulated via proper variation of the deposition parameter such as substrate temperature, laser fluence and thickness of the template layers. We observed the impact of the thickness of LSCO template layer on the orientation of the films. The crystallographic structure and compositional variation were confirmed with x-ray diffraction and energy diffraction x-ray (EDX) analysis. A room temperature dielectric constant varying from 2000 to 4500 was noted for different composition of the films. The dielectric properties of the films were studied over the frequency range of 100 Hz - 100 kHz over a wide range of temperatures. The films exhibited the relaxor-type behavior that was characterized by the frequency dispersion of the temperature of dielectric constant maxima (Tm) and also diffuse phase transition. This relaxor nature in PMN-PT thin films was attributed to freezing of the dipole moment, which takes place below a certain temperature. This phenomenon was found to be very similar to spin glass system, where spins are observed to freeze after certain temperature.

I. Stokes flow past a thin screen. II. Viscous flows past porous bodies of finite size

Part I

The slow, viscous flow past a thin screen is analyzed based on Stokes equations. The problem is reduced to an associated electric potential problem as introduced by Roscoe. Alternatively, the problem is formulated in terms of a Stokeslet distribution, which turns out to be equivalent to the first approach.

Special interest is directed towards the solution of the Stokes flow past a circular annulus. A "Stokeslet" formulation is used in this analysis. The problem is finally reduced to solving a Fredholm integral equation of the second kind. Numerical data for the drag coefficient and the mean velocity through the hole of the annulus are obtained.

Stokes flow past a circular screen with numerous holes is also attempted by assuming a set of approximate boundary conditions. An "electric potential" formulation is used, and the problem is also reduced to solving a Fredholm integral equation of the second kind. Drag coefficient and mean velocity through the screen are computed.

Part II

The purpose of this investigation is to formulate correctly a set of boundary conditions to be prescribed at the interface between a viscous flow region and a porous medium so that the problem of a viscous flow past a porous body can be solved.

General macroscopic equations of motion for flow through porous media are first derived by averaging Stokes equations over a volume element of the medium. These equations, including viscous stresses for the description, are more general than Darcy's law. They reduce to Darcy's law when the Darcy number becomes extremely small.

The interface boundary conditions of the first kind are then formulated with respect to the general macroscopic equations applied within the porous region. An application of such equations and boundary conditions to a Poiseuille shear flow problem demonstrates that there usually exists a thin interface layer immediately inside the porous medium in which the tangential velocity varies exponentially and Darcy's law does not apply.

With Darcy's law assumed within the porous region, interface boundary conditions of the second kind are established which relate the flow variables across the interface layer. The primary feature is a jump condition on the tangential velocity, which is found to be directly proportional to the normal gradient of the tangential velocity immediately outside the porous medium. This is in agreement with the experimental results of Beavers, et al.

The derived boundary conditions are applied in the solutions of two other problems: (1) Viscous flow between a rotating solid cylinder and a stationary porous cylinder, and (2) Stokes flow past a porous sphere.

Alterações histopatológicas pancreáticas, placentárias e na matriz extracelular hipofisária durante a diabetes mellitus gestacional

A Diabetes Mellitus Gestacional (DMG) pode ser definida como intolerância a carboidrato durante a gravidez e estima-se que pode afetar 10-22% de todas as pacientes grávidas. Durante a gravidez podem surgir diversas complicações para o feto como risco elevado de aborto espontâneo, anormalidades congênitas e morbidade e mortalidade neonatal. Entretanto, podem surgir também alterações morfofuncionais em diversos órgãos da mãe diabética, porém isso não é bem estabelecido. Investigar se haverá ou não alterações bioquímicas e histopatológicas em diversos órgãos, como hipófise, útero, placenta e pâncreas de ratas grávidas com diabetes mellitus durante e no final da gravidez e compará-las . Além disso, investigar se há alteração na matriz extracelular (MEC) da hipófise desses animais. No 5 dia de vida, ratas Wistar foram divididas em dois grupos: um tratado com estreptozotocina (Grupo Diabético / DIAB), na dose de 90 mg/kg, subcutâneo e outro grupo, que foi tratado com veículo (tampão citrato/CTR). Aos 90 dias de vidas, foram submetidas ao cruzamento. Após isso, foram sacrificadas no 11 e 21 dia de gravidez. Foram avaliados glicemia e bioquímica maternal e número de implantes .O pâncreas, útero, placenta e hipófises foram coradas com Hematoxilina e Eosina e somente as hipófises foram coradas com Massom e Picrosirius, para avaliação da MEC.Os animais diabéticos tanto do 11 quanto do 21 dia apresentaram uma redução no número de implantes, menor peso e maior glicemia e colesterol total, em relação aos animais controle independente do dia da gravidez. Não foi verificada diferença dos níveis de triglicerídeos entre os grupos não diabéticos e diabéticos, independente dos dias. Entretanto, os animais diabéticos que finalizaram o período de gestação apresentaram uma maior glicemia maternal em relação ao grupo diabético do 11 dia. Pâncreas de ratas diabéticas do 21 dia apresentaram vacuolização intracitoplasmática das ilhotas, insulite,migração de células inflamatórias, espessamento da parede do vaso e fibrose periductal e vascular. Essas alterações foram verificadas com bem menor intensidade nos animais diabéticos do 11 dia. Foi verificado que a placenta de animais diabéticos apresenta congestão na interface materno-fetal, migração celular, maior concentração de vasos maternos e fetais, mas em forma irregular , necrose e vacuolização. A hipófise de animais diabéticos mostraram células cromófobas agregadas, aumento da espessura de fibras de colágeno vermelhas da MEC, em contraste com o controle, que foi visualizado fibras em verde e em formato de feixe. A diabetes desempenhou um total remodelamento da hipófise. Gravidez de animais diabeticos mostraram maior dano ao pâncreas e placenta, especialmente no final da gravidez. Em consequência dessa alterações, esses animais diabéticos apresentaram hiperglicemia, maior colesterol total, porém menor peso materno, número de implantes e sem alterações nos triglicerídeos. Esse é o primeiro estudo a demonstrar remodelamento tecidual em alguns elementos da MEC na hipófise, como espessamento da camada da MEC e fibras de colágeno em verde. Alterações da MEC da hipófise são provavelmente devido ao processo de diabetes na gestação.

Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

We report the photoluminescence (PL) and structural properties of self-assembled InAs/GaAs quantum dots (QDs) covered by In0.2Al0.8As and In0.2Ga0.8As combination strain-reducing layer (SRL). By introducing a thin InAlAs layer, the ground state emission wavelength redshifts, and the energy splitting between the ground and first-excited states increases to 85 meV at 10 K. The energy splitting further increases to 92 meV and the temperature dependence of full width at half maximum (FWHM) changes for QDs with different SRL after the multi-stacking. These results are attributed to the fact that the combination layer has different effects on QDs compared to the InGaAs SRL.

In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

High-quality In0.25Ga0.75As films were grown on low-temperature (LT) ultra-thin GaAs buffer layers formed on GaAs (0 0 1) substrate by molecular beam epitaxy. The epilayers were studied by atomic force microscopy (AFM), photo luminescence (PL) and double crystal X-ray diffraction (DCXRD), All the measurements indicated that LT thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.

Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition

A new alternative method to grow the relaxed Ge0.24Si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Angstrom Ge0.24Si0.76 layer was first grown on a Si(100) substrate. Then a 500-Angstrom Si layer and a subsequent 5000-Angstrom Ge0.24Si0.76 overlayer followed. All these three layers were grown at 600 degrees C. After being removed from the growth system to air, the sample was first annealed at 850 degrees C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Angstrom Ge0.24Si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Angstrom Ge0.24Si0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.

Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodes

Thin film Ba0.5Sr0.5TiO3 (BST) capacitors of thickness similar to75 nm to similar to1200 nm, with Au top electrodes and SrRuO 3 (SRO) or (La, Sr)CoO3 (LSCO) bottom electrodes were fabricated using Pulsed Laser Deposition. Implementing the "series capacitor model," bulk and interfacial capacitance properties were extracted as a function of temperature and frequency. 'Bulk' properties demonstrated typical ceramic behaviour, displaying little frequency dependence and a permittivity and loss peak at 250 K and 150 K respectively. The interfacial component was found to be relatively temperature and frequency independent for the LSCO/BST capacitors, but for the SRO/BST configuration the interfacial capacitance demonstrated moderate frequency and little temperature dependence below T similar to 300 K but a relatively strong frequency and temperature dependence above T similar to3 00 K. This was attributed to the thermal activation of a space charge component combined with a thermally independent background. The activation energy for the space charge was found to be E-A similar to 0.6 eV suggesting de-trapping of electrons from shallow level traps associated with a thin interfacial layer of oxygen vacancies, parallel to the electrodes.