Revised IR spectrum, radiative efficiency and global warming potential of nitrogen trifluoride

Nitrogen trifluoride (NF3) is an industrial gas used in the semiconductor industry as a plasma etchant and chamber cleaning gas. NF3 is an alternative to other potent greenhouse gases and its usage has increased markedly over the last decade. In recognition of its increased relevance and to aid planning of future usage we report an updated radiative efficiency and global warming potentials for NF3. Laboratory measurements give an integrated absorption cross section of 7.04 x 10(-17) cm(2) molecule(-1) cm(-1) over the spectral region 200 2000 cm(-1). The radiative efficiency is calculated to be 0.21 Wm(-2) ppbv(-1) and the 100 year GWP, relative to carbon dioxide, is 17200. These values are approximately 60% higher than previously published estimates, primarily reflecting the higher infrared absorption cross-sections reported here.

Ordering in thin films of block copolymers: fundamentals to potential applications

The ordering of block copolymers in thin films is reviewed, starting, from the fundamental principles and extending to recent promising developments as templates for nanolithography which may find important applications in the semiconductor industry. Ordering in supported thin films of symmetric and asymmetric AB diblock and ABA triblock copolymers is discussed, along with that of more complex materials such as ABC triblocks and liquid crystalline block copolymers Techniques to prepare thin films, and to characterise ordering within them, are summarized. Several methods to align Hock copolymer nanostructures, important in several applications are outlined A number of potential applications in nanolithography, production of porous materials, templating. and patterning of organic and inorganic materials are then presented. The influence of crystallization on the morphology of a block copolymer film is briefly discussed, as are structures in grafted block copolymer films. (C) 2009 Elsevier Ltd All rights reserved.

The evolution of innovation capability in multinational enterprise subsidiaries: dual network embeddedness and the divergence of subsidiary specialisation in Taiwan

This paper examines how innovation-related capabilities for production, design and marketing develop at the subsidiary level within multinational enterprises (MNEs). We focus on how subsidiary autonomy and changing opportunities to access internal (MNE) and external (host country) sources of capability contribute in a combined way to the accumulation of specialist capabilities in five Taiwan-based MNE subsidiaries in the semiconductor industry. Longitudinal analysis shows how the accumulation process is subject to discontinuities, as functional divisions are (re)opened and closed during the lifetime of the subsidiary. A composite set of innovation output measures also shows significant variations in within-function levels of capability across our sample. We conclude that subsidiary specialisation and unique subsidiary-specific advantages have evolved in a way that is strongly influenced by the above factors.

A novel defect detection and identification method in optical inspection

Optical inspection techniques have been widely used in industry as they are non-destructive. Since defect patterns are rooted from the manufacturing processes in semiconductor industry, efficient and effective defect detection and pattern recognition algorithms are in great demand to find out closely related causes. Modifying the manufacturing processes can eliminate defects, and thus to improve the yield. Defect patterns such as rings, semicircles, scratches, and clusters are the most common defects in the semiconductor industry. Conventional methods cannot identify two scale-variant or shift-variant or rotation-variant defect patterns, which in fact belong to the same failure causes. To address these problems, a new approach is proposed in this paper to detect these defect patterns in noisy images. First, a novel scheme is developed to simulate datasets of these 4 patterns for classifiers' training and testing. Second, for real optical images, a series of image processing operations have been applied in the detection stage of our method. In the identification stage, defects are resized and then identified by the trained support vector machine. Adaptive resonance theory network 1 is also implemented for comparisons. Classification results of both simulated data and real noisy raw data show the effectiveness of our method.

High-Resolution Chemical Depth Profiling of Solid Material Using a Miniature Laser Ablation/Ionization Mass Spectrometer

High-resolution chemical depth profiling measurements of copper films are presented. The 10 μm thick copper test samples were electrodeposited on a Si-supported Cu seed under galvanostatic conditions in the presence of particular plating additives (SPS, Imep, PEI, and PAG) used in the semiconductor industry for the on-chip metallization of interconnects. To probe the trend of these plating additives toward inclusion into the deposit upon growth, quantitative elemental mass spectrometric measurements at trace level concentration were conducted by using a sensitive miniature laser ablation ionization mass spectrometer (LIMS), originally designed and developed for in situ space exploration. An ultrashort pulsed laser system (τ ∼ 190 fs, λ = 775 nm) was used for ablation and ionization of sample material. We show that with our LIMS system, quantitative chemical mass spectrometric analysis with an ablation rate at the subnanometer level per single laser shot can be conducted. The measurement capabilities of our instrument, including the high vertical depth resolution coupled with high detection sensitivity of ∼10 ppb, high dynamic range ≥10(8), measurement accuracy and precision, is of considerable interest in various fields of application, where investigations with high lateral and vertical resolution of the chemical composition of solid materials are required, these include, e.g., wafers from semiconductor industry or studies on space weathered samples in space research.

Strategy and Circumstance: the Response of American Firms to Japanese Competition in Semiconductors, 1980-1995

The transistor was an American invention, and American firms led the world in semiconductor production and innovation for the first three decades of that industry's existence. In the 1980s, however, Japanese producers began to challenge American dominance. Shrill cries arose from the literature of public policy, warning that the American semiconductor industry would soon share the fate of the lamented American consumer electronics business. Few dissented from the implications: the only hope for salvation would be to adopt Japanese-style public policies and imitate the kinds of capabilities Japanese firms possessed. But the predicted extinction never occurred. Instead, American firms surged back during the 1990s, and it now seems the Japanese who are embattled. This striking American turnaround has gone largely unremarked upon in the public policy literature. And even scholarship in strategic management, which thrives on stories of success instead of stories of failure, has been comparatively silent. Drawing on a more thorough economic history of the worldwide semiconductor industry (Langlois and Steinmueller 1999), this essay attempts to collect some of the lessons for strategy research of the American resurgence. We argue that, although some of the American response did consist in changing or augmenting capabilities, most of the renewed American success is in fact the result not of imitating superior Japanese capabilities but rather of taking good advantage of a set of capabilities developed in the heyday of American dominance. Serendipity played at least as important a role as did strategy.

Development of a versatile biotinylated material based on SU-8

The negative epoxy-based SU-8 photoresist has a wide variety of applications within the semiconductor industry, photonics and lab-on-a-chip devices, and it is emerging as an alternative to silicon-based devices for sensing purposes. In the present work, biotinylation of the SU-8 polymer surface promoted by light is reported. As a result, a novel, efective, and low-cost material, focusing on the immobilization of bioreceptors and consequent biosensing, is developed. This material allows the spatial discrimination depending on the irradiation of desired areas. The most salient feature is that the photobiotin may be directly incorporated into the SU-8 curing process, consequently reducing time and cost. The potential use of this substrate is demonstrated by the immunoanalytical detection of the synthetic steroid gestrinone, showing excellent performances. Moreover, the naked eye biodetection due to the transparent SU-8 substrate, and simple instrumental quantication are additional advantages.

Electron tubes and semiconductors : production, consumption, trade : selected Latin American countries.

Mode of access: Internet.

1992 census of manufactures.

Mode of access: Internet.

SERI laser scanner system /

A Laser Scanner System (LSS) produces a photoresponse map and can be used for the nondestructive detection of nonuniformities in the photoresponse of a semiconductor device. At SERI the photoresponse maps are used to identify solar cell faults including microcracks, metallization breaks, regions of poor contact between metallization and the underlying emitter surface, and variations in emitter sheet resistance.

1987 census of manufactures.

Mode of access: Internet.

An automated photovoltaic system for the measurement of resistivity variations, in high-resistivity circular silicon slices /

Includes bibliographical references.

Federal research : SEMATECH's efforts to develop and transfer manufacturing technology : fact sheet for the Committee on Science, Space, and Technology, House of Representatives /

"B-236639"--P. 1.

Federal research : SEMATECH's technological progress and proposed R&D program : briefing report to the chairman, Subcommitte on Defense, Committee on Appropriations, U.S. Senate /

"B-248911."