Effect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramics

In this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron microcopy (SEM), dielectric properties and ferroelectric hysteresis loops. BaBi2Ta2O9 (BBT) ceramics have been successfully prepared by the solid-state reaction. The BBT phase was crystallized at 900 degreesC for 2 h. The excess of bismuth controls the grain size, affecting the density of the material. Measurements of dieletric constant and dieletric losses confirm that the material is a ferroeletric with a Curie temperature around 77 degreesC. The dieletric constant measured at room temperature was 400, with a dielectric loss of 0.03. Both the phase-transition behaviour and ferroelectric properties, such as spontaneous polarization (P-s), showed a dependence on Bi content. (C) 2004 Elsevier B.V. All rights reserved.

Textured PbZr0.3Ti0.7O3 thin films produced by polymeric precursor method using microwave oven

PbZr0.3Ti0.7O3 (PZT) films were produced by polymeric precursor route and deposited by spin-coater technique on Pt(111)/Ti/SiO2/Si(100) substrates. The films were heat-treated using different furnaces: (a) a conventional furnace, at 700 degrees C; and (b) a domestic microwave oven, at 600 degrees C. The X-ray patterns revealed that both films are single phase and reflections were identified as belongs to the PZT phase. The intensity of these reflections showed a (111), (001) and (100) preferred orientation. Morphological and electrical characterizations showed that all samples present a rather different microstructure and both with high spontaneous polarization.

Piezoelectric behavior of SrRuO(3) buffered lanthanum modified bismuth ferrite thin films grown by chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Rietveld analyses and piezoelectric properties of niobium doped bismuth titanate systems

Bi 4Ti 3- xNbxO 12 (BITNb) samples, with × ranging from 0 to 0.40 were obtained using a polymeric precursor solution. Rietveld analyses confirmed that the powders crystallize in an orthorhombic structure free of secondary phases with space group Fmmm. Raman analysis evidenced a sharp increase in the bands intensity located at 129 cm -1 and 190 cm -1 due the lattice distortion in BIT02Nb and BIT04Nb compositions. UV-vis spectra indicated that addition of niobium causes a reduction of defects in the BIT lattice due the suppression of oxygen vacancies located at BO-6 octahedral. Size and morphology of particles as well as electrical behavior of BIT ceramics were affected by addition of donor dopant. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning and was investigated by piezoresponse force microscopy (PFM). PFM measurements revealed a decrease in piezoelectric response with increasing Nb concentration originating from a reduced polarizability along the a-axis. High spontaneous polarization is noted for the less doped sample due the reduction of strain energy and pin charged defects after niobium addition. Copyright © 2010 American Scientific Publishers.

Síntese e caracterização de nanoestruturas e filmes finos de 'BI' 'FE' 'OIND.3' modificado com samário visando aplicação em memórias de múltiplos estados

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeito da adição de níquel nas propriedades elétricas de nanopós de niobato de potássio e estrôncio de estrutura tungstênio bronze

Pós-graduação em Química - IBILCE

Band structure calculations of InP wurtzite/zinc-blende quantum wells

Semiconductor nanowhiskers (NWs) made of III-V compounds exhibit great potential for technological applications. Controlling the growth conditions, such as temperature and diameter, it is possible to alternate between zinc-blende (ZB) and wurtzite (WZ) crystalline phases, giving origin to the so called polytypism. This effect has great influence in the electronic and optical properties of the system, generating new forms of confinement to the carriers. A theoretical model capable to accurately describe electronic and optical properties in these polytypical nanostructures can be used to study and develop new kinds of nanodevices. In this study, we present the development of a wurtzite/zinc-blende polytypical model to calculate the electronic band structure of nanowhiskers based on group theory concepts and the k.p method. Although the interest is in polytypical superlattices, the proposed model was applied to a single quantum well of InP to study the physics of the wurtzite/zinc-blende polytypism. By the analysis of our results, some trends can be predicted: spatial carriers' separation, predominance of perpendicular polarization (xy plane) in the luminescence spectra, and interband transition blueshifts with strain. Also, a possible range of values for the wurtzite InP spontaneous polarization is suggested. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767511]

Ferroelektrische Netzwerksynthese und ihre Charakterisierung

Deutsch:Diese Arbeit beschäftigt sich zum einen mit der Synthese neuer, vernetzbarer, ferroelektrischer Verbindungen, welche eine höhere spontane Polarisation und damit ein besseres Schaltverhalten nach Vernetzung aufweisen sollten. Dazu wurde in bekannte Systemen die Halogene Fluor, Chlor und Brom erfolgreich eingebaut. Desweiteren konnten neue Untersuchungmethoden für ferroelektrische, flüssigkristalline Netzwerke erfolgreich angewendet und weiterentwickelt werden. Damit gelang es z. B. neue Erkenntnisse über die elastischen Eigenschaften von LC-Elastomeren zu gewinnen, wobei es erstmalig gelang, Seifenblasen aus LC-Polymeren herzustellen und durch UV-Bestrahlung zu vernetzen. Durch die Messung des Radius in Abhängigkeit des Druckes war es möglich festzustellen, daß sich das Verhalten des Polymers, welches zunächst oberflächenspannungskontrolliert war, nach UV-Bestrahlung, in ein elastisches Verhalten änderte. Aus der Radius vs. Druckbeziehung war es möglich, Daten über die elastischen Eigenschaften zu erhalten. Die Ballone zeigten dabei typische, gummielastische Eigenschaften. Ein Einfluß der Mesophase (d.h. SA oder SC-Phase) auf die Eigenschaften der Ballone konnte dabei nicht festgestellt werden. Für die beiden hier untersuchten Systeme des inter- und intralyer vernetzbaren System konnte festgestellt werden, daß ihr elastisches Verhalten sehr ähnlich ist, ganz im Gegensatz zu den früheren elektrooptischen Untersuchungen. D. h. beide Systeme zeigten nach der Vernetzung bis auf einen Faktor 2 das gleiche elastische Verhalten. Im Gegensatz zu nematischen Elastomeren, welche am Phasenübergang zum Teil große thermoelastische Änderungen zeigen, zeigten die hier untersuchten Elastomere keine Änderung der elastischen Eigenschaften beim Phasenübergang, was sich u.a. auf die relativ hohen Vernetzungsdichten zurückführen läßt. Weiterhin wurde die Elektrostriktion in ferroelektrischen flüssigkristallinen Elastomerenfilmen untersucht, welche zu einem neuen Weltrekord des elektrostriktiven Effektes führte. Es wurden Schichtdickenänderungen von 4% bei einem angelegten Feld von 1,5 kV gemessen. Röntgenstreuexperimente an gespincoateten, vernetzten Polymerfilmen haben überdies gezeigt, daß der gemessene Effekt voll und ganz auf den elektroklinen Effekt zurück zu führen ist. Zum Schluß wurde ein neuer Weg ausgearbeitet, um flüssigkristalline Netzwerke unter Einsatz von weniger präparativer Chemie zu erhalten. Dazu wurde die Möglichkeit der Netzwerkbildung mit organischen Gelbildnern untersucht. In diesem Zusammenhang ist es erstmalig gelungen, ferroelektrische Flüssigkristalle reversibel in dem einen oder anderen Zustand orientiert zu stabilisieren, wobei beliebig oft zwischen den stabilisierten Zuständen gewechselt werden konnte.

Photovernetzbare flüssigkristalline Polymere unterschiedlicher Kettentopologien

„Photovernetzbare flüssigkristalline Polymere unterschiedlicher Kettentopologien“, Patrick Beyer, Mainz 2007 Zusammenfassung In der vorliegenden Arbeit wurde die Synthese und Charakterisierung flüssigkristalliner Elastomere unterschiedlicher Polymertopologien vorgestellt. Dabei wurden Systeme synthetisiert, bei denen die mesogenen Einheiten entweder als Seitengruppen an ein Polymerrückgrat angebunden (Seitenkettenelastomere) oder direkt in die Polymerkette integriert (Hauptkettenelastomere) sind (siehe Abbildung). Bezüglich der Seitenkettensysteme konnten erstmals photovernetzbare smektische Seitenkettenpolymere, in denen aufgrund der Anknüpfung eines photoisomerisierbaren Azobenzols eine Photo- modulation der ferroelektrischen Eigenschaften möglich ist, dargestellt werden. Homöotrop orientierte freistehende Filme dieser Materialien konnten durch Spincoaten dargestellt und unter Ausnutzung des Dichroismus der Azobenzole durch geeignete Wahl der Bestrahlungsgeometrie photovernetzt werden. Aufbauend auf diesen Untersuchungen wurde anhand eines nicht vernetzbaren Modellsystems im Detail der Einfluss der trans-cis Isomerisierung des Azobenzols auf die ferroelektrischen Parameter untersucht. Durch zeitaufgelöste Messungen der Absorption der Azobenzole, der spontanen Polarisation und des Direktorneigungswinkels und Auswertung der kinetischen Prozesse konnte eine lineare Abhängigkeit der ferroelektrischen Eigenschaften vom Grad der Isomerisierungsreaktion festgestellt werden. Durch Vergleich dieser in der flüssigkristallinen Phase erhaltenen Ergebnisse mit der Kinetik der thermischen Reisomerisierung in Lösung (Toluol) konnte ferner eine deutliche Reduzierung der Relaxationszeiten in der anisotropen flüssigkristallinen Umgebung festgestellt und auf eine Absenkung der Aktivierungsenergie zurückgeführt werden. Makroskopische Formänderungen der Seitenkettenelastomere am Phasenübergang von der flüssigkristallinen in die isotrope Phase konnten jedoch nicht festgestellt werden. Aus diesem Grund wurden neue Synthesestrategien für die Darstellung von Hauptkettenelastomeren entwickelt, die sich aufgrund der direkten Kopplung von flüssigkristallinem Ordnungsgrad und Polymerkettenkonformation besser für die Herstellung thermischer Aktuatoren eignen. Auf Basis flüssigkristalliner Polymalonate konnten dabei lateral funktionalisierte smektische Hauptkettenpolymere synthetisiert werden, welche erstmals die Darstellung von LC-Hauptkettenelastomeren durch Photovernetzung in der flüssigkristallinen Phase erlauben. Durch laterale Bromierung konnte in diesen Systemen die Kristallisationstendenz der verwendeten Biphenyleinheiten unterdrückt werden. Bezüglich der Photovernetzung konnten zwei neue Synthesemethoden entwickelt werden, bei denen der Vernetzungsschritt entweder durch radikalische Polymerisation lateral angebundener Acrylatgruppen oder durch photoaktive Benzophenongruppen erfolgte. Basierend auf den Benzophenon funktionalisierten Systemen konnte ein neuartiges Verfahren zur Darstellung makroskopisch orientierter Hauptkettenelastomere durch Photovernetzung entwickelt werden. Die Elastomerproben, deren Ordnungsgrad durch Röntgenuntersuchungen ermittelt werden konnte, zeigen am Phasenübergang von der flüssigkristallinen in die isotrope Phase eine reversible Formänderung von 40%. Im Gegensatz zu anderen bekannten smektischen Systemen konnten die in dieser Arbeit vorgestellten Elastomere ohne Zerstörung der Phase bis zu 60% entlang der smektischen Schichtnormalen gestreckt werden, was im Kontext einer geringen Korrelation der smektischen Schichten in Hauptkettenelastomeren diskutiert wurde.

Ezrin/moesin in motile Walker 256 carcinosarcoma cells: signal-dependent relocalization and role in migration

Rat Walker 256 carcinosarcoma cells spontaneously develop front-tail polarity and migrate in the absence of added stimuli. Constitutive activation of phosphatidylinositol-3 kinase (PI 3-kinase), Rac, Rho and Rho kinase are essential for these processes. Ezrin and moesin are putative targets of these signaling pathways leading to spontaneous migration. To test this hypothesis, we used specific siRNA probes that resulted in a downregulation of ezrin and moesin by about 70% and in a similar reduction in the fraction of migrating cells. Spontaneous polarization however was not affected, indicating a more subtle role of ezrin and moesin in migration. We provide furthermore evidence that endogenous ezrin and moesin colocalize with F-actin at the contracted tail of polarized cells, similar to ectopically expressed green fluorescent protein-tagged ezrin. Our results suggest that myosin light chain and ezrin are markers of front and tail, respectively, even in the absence of morphological polarization. We further show that endogenous ezrin and moesin are phosphorylated and that activities of PI-3 kinase, Rho and Rac, but not of Rho-kinase, are required for this C-terminal phosphorylation. Activation of protein kinase C in contrast suppressed phosphorylation of ezrin and moesin. Inhibition of ezrin phosphorylation prevented its membrane association.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

Dielectric studies of Liquid Crystal Nanocomposites and Nanomaterial systems.

Liquid crystals (LCs) have revolutionized the display and communication technologies. Doping of LCs with inorganic nanoparticles such as carbon nanotubes, gold nanoparticles and ferroelectric nanoparticles have garnered the interest of research community as they aid in improving the electro-optic performance. In this thesis, we examine a hybrid nanocomposite comprising of 5CB liquid crystal and block copolymer functionalized barium titanate ferroelectric nanoparticles. This hybrid system exhibits a giant soft-memory effect. Here, spontaneous polarization of ferroelectric nanoparticles couples synergistically with the radially aligned BCP chains to create nanoscopic domains that can be rotated electromechanically and locked in space even after the removal of the applied electric field. The resulting non-volatile memory is several times larger than the non-functionalized sample and provides an insight into the role of non-covalent polymer functionalization. We also present the latest results from the dielectric and spectroscopic study of field assisted alignment of gold nanorods.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

Spontaneous spin polarization and electron localization in constrained geometries: The Wigner transition in nanowires

The Wigner transition in a jellium model of cylindrical nanowires has been investigated by density-functional computations using the local spin-density approximation. A wide range of background densities rho(b) has been explored from the nearly ideal metallic regime (r(s)=[3/4 pi rho(b)](1/3)=1) to the high correlation limit (r(s)=100). Computations have been performed using an unconstrained plane wave expansion for the Kohn-Sham orbitals and a large simulation cell with up to 480 electrons. The electron and spin distributions retain the cylindrical symmetry of the Hamiltonian at high density, while electron localization and spin polarization arise nearly simultaneously in low-density wires (r(s)similar to 30). At sufficiently low density (r(s)>= 40), the ground-state electron distribution is the superposition of well defined and nearly disjoint droplets, whose charge and spin densities integrate almost exactly to one electron and 1/2 mu(B), respectively. Droplets are arranged on radial shells and define a distorted lattice whose structure is intermediate between bcc and fcc. Dislocations and grain boundaries are apparent in the droplets' configuration found by our simulations. Our computations aim at modeling the behavior of experimental low-carried density systems made of lightly doped semiconductor nanostructures or conducting polymers.

Spontaneous spin polarization and charge localization in metal nanowires: the role of a geometric constriction

An idealized jellium model of conducting nanowires with a geometric constriction is investigated by density functional theory (DFT) in the local spin density (LSD) approximation. The results reveal a fascinating variety of spin and charge patterns arising in wires of sufficiently low (r(s) >= 15) average electron density, pinned at the indentation by an apparent attractive interaction with the constriction. The spin-resolved frequency-dependent conductivity shows a marked asymmetry in the two spin channels, reflecting the spontaneous spin polarization around the wire neck. The relevance of the computational results is discussed in relation to the so-called 0.7 anomaly found by experiments in the low-frequency conductivity of nanowires at near-breaking conditions (see 2008 J. Phys.: Condens Matter 20, special issue on the 0.7 anomaly). Although our mean-field approach cannot account for the intrinsic many-body effects underlying the 0.7 anomaly, it still provides a diagnostic tool to predict impending transitions in the electronic structure.