Qualidade da carne de cordeiros Santa Inês puros e mestiços com Texel abatidos com diferentes pesos

Propôs-se avaliar os parâmetros de qualidade pH, cor, perda de peso por cozimento (PPC) e força de cisalhamento (FC) no músculo Longissimus dorsi (LD) e Semimembranosus (SM) de 13 cordeiros machos e 14 fêmeas Santa Inês puro (SI x SI) e o mesmo número de animais Texel x Santa Inês (T x SI), abatidos com 15, 25, 35 e 45 kg PV. A carcaça foi resfriada por 24 horas a 2ºC, realizando-se, durante este período, as medidas de pH. Retiraram-se os músculos LD e SM para as análises de cor, PPC e FC. Utilizou-se um DIC, fatorial 2x2x4, e as médias foram analisadas pelo Proc GLM do programa estatístico SAS. As medidas de pH foram analisadas em parcela subdividida. A queda do pH no LD e SM foi mais acentuada para os animais mais leves. A carne das fêmeas T x SI apresentou pH final maior que a dos machos e cordeiros SI x SI. A luminosidade diminuiu e a intensidade da cor vermelha elevou-se com o aumento do peso de abate. A carne dos machos e dos cordeiros SI x SI apresentou coloração mais vermelha e menos luminosa no LD e SM. A PPC foi menor na carne dos cordeiros mais pesados; no músculo LD, dos machos houve menor perda de água que nos das fêmeas. Os machos tiveram carne mais dura e, com o aumento do peso de abate, houve diminuição de FC, sendo maior para o T x SI para o músculo LD e Santa Inês puro para o músculo SM.

Composição centesimal da carne de cordeiros Santa Inês puros e de seus mestiços com Texel abatidos com diferentes pesos

Objetivou-se avaliar a composição centesimal da carne de cordeiros da raça Santa Inês (SI x SI) e de seus mestiços com Texel (T x SI), abatidos com diferentes pesos vivos. O músculo biceps femoris foi utilizado para as análises de umidade, de proteína bruta (PB), de extrato etéreo (EE) e de cinzas. O delineamento foi inteiramente casualizado, com 16 tratamentos, em esquema fatorial 2x2x4, com dois grupos genéticos, dois sexos (14 machos e 13 fêmeas em cada grupo) e quatro pesos de abate (15, 25, 35 e 45 kg PV), sendo os dados analisados com auxílio Proc GLM do programa estatístico SAS. A umidade diminuiu com o peso de abate, variando de 76,09 a 74,31%, e os machos apresentaram valores maiores em relação às fêmeas. A PB teve comportamento quadrático, variando de 20,27 a 21,36%. Com o aumento do peso de abate, o teor de EE elevou, variando de 0,95 a 3,78%, sendo que SI x SI tiveram maior teor de EE. Os machos, de ambos os grupamentos genéticos, tiveram menor teor de extrato etéreo. Houve declínio do teor de cinzas com o avanço do peso, e as fêmeas apresentaram os maiores valores. Conclui-se que o peso de abate alterou a composição centesimal da carne de cordeiros, de modo que os animais mais pesados apresentaram menor teor de umidade e de cinzas e maior teor de EE. O sexo e o grupo genético influenciaram o teor de EE, indicando a possibilidade de abate em pesos diferentes, conforme o sexo e a raça.

Special Heusler compounds for spintronic applications

This work emphasizes the potential of Heusler compounds in a wide range of spintronic applications. Using electronic structure calculations it is possible to design compounds for specific applications. Examples for GMR and TMR applications, for spin injection into semiconductors, and for spin torque transfer applications will be shown. After a detailed introduction about spintronics and related materials chapter 5 reports about the investigation of new half-metallic compounds where the Fermi energy is tuned in the middle of the gap to result in more stable compounds for GMR and TMR applications. The bulk properties of the quaternary Heusler alloy Co2Mn(1-x)Fe(x)Si with the Fe concentration ranging from x=0 to 1 will be reported and the results suggest that the best candidate for applications may be found at an iron concentration of about 50%. Due to the effect that in the Co2Mn(1-x)Fe(x)Si series the transition metal carrying the localized moment is exchanged and this might lead to unexpected effects on the magnetic properties if the samples are not completely homogeneous chapter 6 reports about the optimization of the Heusler compounds for GMR and TMR applications. The structural and magnetic properties of the quaternary Heusler alloy Co2FeAl(1-x)Si(x) with varying Si concentration will be reported. From the combination of experimental (better order for high Si content) and theoretical findings (robust gap at x = 0.5) it is concluded that a compound with an intermediate Si concentration close to x=0.5-0.7 would be best suited for spintronic applications, especially for GMR and TMR applications. In chapter 7 the detailed investigation of compounds for spin injection into semiconductors will be reported. It will be shown that the diluted magnetic semiconductors based on CoTiSb with a very low lattice mismatch among each other are interesting materials for spintronics applications like Spin-LEDs or other spin injection devices. Chapter 8 refers about the investigation of the theoretically predicted half-metallic completely compensated-ferrimagnet Mn$_3$Ga as a suitable material for spin torque transfer applications. The Curie temperature is above 730~K and the electronic structure calculations indicate a nearly half-metallic ferrimagnetic order with 88% spin polarization at the Fermi energy.}

Performance analysis of a 7-kW crystalline silicon generator after 17 years of operation in Madrid

The degradation observed on a 7-kWp Si-x photovoltaic array after 17 years of exposure on the roof of the Solar Energy Institute of the Polytechnic University of Madrid is presented. The mean peak power degradation has been 9% over this time, or an equivalent to 0.53% per year, whereas peak power standard deviation has remained constant. The main visual defects are backsheet delamination at the polyester/polyvinyl fluoride outer interface and cracks in the terminal boxes and at the joint between the frame and the laminate. Insulation resistance complies well with the requirements of the International Electrotechnical Commission 61215 tests.

A mass spectrometry study of XCO+, X = Si, Ge : Is SiCO+ a main group carbonyl? Comments on the bonding in ground state SiCO and the Si,C,O (+) potential energy surface

The cation\[Si,C,O](+) has been generated by 1) the electron ionisation (EI) of tetramethoxysilane and 2) chemical ionisation (CI) of a mixture of silane and carbon monoxide. Collisional activation (CA) experiments performed for mass-selected \[Si,C,O](+), generated by using both methods, indicate that the structure is not inserted OSiC+; however, a definitive structural assignment as Si+-CO, Si+-OC or some cyclic variant is impossible based on these results alone. Neutralisation-reionisation (+NR+) experiments for EI-generated \[Si,C,O](+) reveal a small peak corresponding to SiC+, but no detectable SiO+ signal, and thus establishes the existence of the Si+-CO isomer. CCSD(T)//B3LYP calculations employing a triple-zeta basis set have been used to explore the doublet and quartet potential-energy surfaces of the cation, as well as some important neutral states The results suggest that both Si+-CO and Si+ - OC isomers are feasible; however, the global minimum is (2)Pi SiCO+. Isomeric (2)Pi SiOC+ is 12.1 kcal mol(-1) less stable than (2)Pi SiCO+, and all quartet isomers are much higher in energy. The corresponding neutrals Si-CO and Si-OC are also feasible, but the lowest energy Si - OC isomer ((3)A") is bound by only 1.5 kcal mol(-1). We attribute most, if nor all, of the recovery signal in the +NR' experiment to SiCO+ survivor ions. The nature of the bonding in the lowest energy isomers of Si+ -(CO,OC) is interpreted with the aid of natural bond order analyses, and the ground stale bonding of SiCO+ is discussed in relation to classical analogues such as metal carbonyls and ketenes.

X-ray-reflectivity study of Ge-Si-Ge films

Here we report on an x-ray specular reflectivity study of Ce-Si-Ge trilayers grown on Si(001) single-crystal substrate by ion beam sputtering deposition at various substrate temperatures. The electron-density profile of the trilayer as a function of depth, obtained from x-ray-reflectivity data, reveals an intermixing of Si and Ge. The x-ray-reflectivity data have been analyzed using a scheme based on the distorted-wave Born approximation, and the validity of the analysis scheme was checked using simulated data. Analyzed results provided information regarding interdiffusion in this system. We notice that although the Si-on-Ge interface is sharp, a Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface.

Thermodynamic, kinetic and electrical switching studies on Si(15)Te(85-x)In(x) glasses: Observation of Boolchand intermediate phase

An interesting topic for quite some time is an intermediate phase observed in chalcogenide glasses, which is related to network connectivity and rigidity. This phenomenon is exhibited by Si-Te-In glasses also. It has been addressed here by carrying out detailed thermal investigations by using Alternating Differential Scanning Calorimetry technique. An effort has also been made to determine the stability of these glasses using the data obtained from different thermodynamic quantities and crystallization kinetics of these glasses. Electrical switching behavior by recording I-V characteristics and variation of switching voltages with indium composition have been studied in these glasses for phase change memory applications. (C) 2011 Elsevier Inc. All rights reserved.

Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy

The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.

Influence of Si-C bond density on the properties of a-Si(1-x)C(x) thin films

Amorphous silicon carbide (a-Si(1-x)C(x)) films were deposited on silicon (100) and quartz substrates by pulsed DC reactive magnetron sputtering of silicon in methane (CH(4))-Argon (Ar) atmosphere. The influence of substrate temperature and target power on the composition, carbon bonding configuration, band gap, refractive index and hardness of a-SiC films has been investigated. Increase in substrate temperature results in slightly decreasing the carbon concentration in the films but favors silicon-carbon (Si-C) bonding. Also lower target powers were favorable towards Si-C bonding. X-ray photoelectron spectroscopy (XPS) results agree with the Fourier Transform Infrared (FTIR), UV-vis spectroscopy results. Increase in substrate temperature resulted in increased hardness of the thin films from 13 to 17 GPa and the corresponding bandgap varied from 2.1 to 1.8 eV. (C) 2011 Elsevier B.V. All rights reserved.

Growth mechanism of the Nb(X)Si-2 and [Nb(X)](5)Si-3 phases by reactive diffusion in Nb (X = Ti, Mo, or Zr)-Si systems

The effects of Mo, Ti, and Zr on the diffusion and growth of the Nb(X)Si-2 and Nb(X)(5)Si-3 phases in an Nb(X)-Si system are analyzed. The integrated diffusion coefficients are determined from diffusion couple experiments and compared with the data previously calculated in a binary Nb-Si system. The growth rates of both phases are affected by the addition of Mo and Zr, whereas the addition of Ti has no effect. The atomic mechanism of diffusion is also discussed based on the crystal structure and the possible changes in the defect concentrations due to alloying. Finally, the growth mechanism of the phases is discussed on the basis of a physico-chemical approach. (C) 2011 Elsevier Ltd. All rights reserved.

Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08 +/- 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found similar to 0.74 eV and a type-II heterojunction. (C) 2012 The Japan Society of Applied Physics

Synthesis, microstructure and thermal expansion studies on Ca0 center dot 5+x/2Sr0 center dot 5+x/2Zr4P6-2x Si-2x O-24 system prepared by co-precipitation method

We report on the synthesis, microstructure and thermal expansion studies on Ca0 center dot 5 + x/2Sr0 center dot 5 + x/2Zr4P6 -aEuro parts per thousand 2x Si-2x O-24 (x = 0 center dot 00 to 1 center dot 00) system which belongs to NZP family of low thermal expansion ceramics. The ceramics synthesized by co-precipitation method at lower calcination and the sintering temperatures were in pure NZP phase up to x = 0 center dot 37. For x a parts per thousand yen 0 center dot 5, in addition to NZP phase, ZrSiO4 and Ca2P2O7 form as secondary phases after sintering. The bulk thermal expansion behaviour of the members of this system was studied from 30 to 850 A degrees C. The thermal expansion coefficient increases from a negative value to a positive value with the silicon substitution in place of phosphorous and a near zero thermal expansion was observed at x = 0 center dot 75. The amount of hysteresis between heating and cooling curves increases progressively from x = 0 center dot 00 to 0 center dot 37 and then decreases for x > 0 center dot 37. The results were analysed on the basis of formation of the silicon based glassy phase and increase in thermal expansion anisotropy with silicon substitution.