Evolution of wetting layer in InAs/GaAs quantum dot system

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.

Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy

In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.

Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells

Exciton g factors in GaAs-based quantum wells (QWs) were evaluated by reflectance difference spectroscopy (RDS) under a weak magnetic field. The well-width dependence of the n=1 heavy-hole exciton (1H1E) g factor agrees well with the reported results, demonstrating RDS as a sensitive tool for detection of g factor. By comparison, the n=1 light-hole exciton g factor increases with the well width, and shows a larger value than that of 1H1E. In a 20-nm-wide Al0.02Ga0.98As/AlAs multiple QW sample, the g factors of up to ten excitons are obtained, and the higher-lying exciton g factors are found to be one order larger than that of the 1H1E exciton.

Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layer (WL) in InAs/GaAs quantum-dot systems has been studied by reflectance difference spectroscopy (RDS). Two structures related to the heavy-hole (HH) and light-hole (LH) related transitions in the WL have been observed. On the basis of a calculation model that takes into account the segregation effect and exciton binding energies, the amount of InAs in the WL (t(WL)) and its segregation coefficient ( R) have been determined from the HH and LH transition energies. The evolutions of tWL and R exhibit a close relation to the growth modes. Before the formation of InAs dots, t(WL) increases linearly from similar to 1 to similar to 1.6 monolayer (ML), while R increases almost linearly from similar to 0.8 to similar to 0.85. After the onset of dot formation, t(WL) is saturated at similar to 1.6 ML and R decreases slightly from 0.85 to 0.825. The variation of tWL can be interpreted by using an equilibrium model. Different variations of in-plane optical anisotropy before and after dot formation have been observed.

Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy

For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.

Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH --> 1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH --> 1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. (C) 2002 Elsevier Science B.V. All rights reserved.

Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices

Numerical calculations within the envelope function framework have been performed to analyze the relations between the magnitude of in-plane optical anisotropy and the values of the additional hole-mixing coefficients due to interface and electric field in (001) symmetric GaAs/AlxGa1-xAs superlattices for light propagating along the [001] direction. It is found that the heavy- and light-hole states are mixed independently by interface and electric field. The numeric results demonstrate that the line shape of the in-plane anisotropic spectrum is determined by the ratio of the two hole-mixing coefficients. Theoretical analysis shows that with the help of simple calculation of the anisotropy at k=0, reliable values of the hole-mixing coefficients can be determined by reflectance-difference spectroscopy (IDS) technique, demanding no tedious fitting of experimental curves. The in-plane optical anisotropy measured by RDS provides a new method of getting the information on buried interfaces through the Value of the hole-mixing coefficient due to interface.

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH --> 1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH --> 1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. (C) 2002 Elsevier Science B.V. All rights reserved.

An alternative approach to ascertain the rate-determining steps of TiO2 photoelectrocatalytic reaction by electrochemical impedance spectroscopy

In an attempt to ascertain the rate-determining steps (RDS) of TiO2 photoelectrocatalytic (PEC) reaction, the PEC oxidation of sulfosalicylic acid (SSA) solution in a TiO2-coated electrode reactor system was monitored by applying the electrochemical impedance spectroscopy (EIS) method. In the meantime, an EIS mathematical model was first established to theoretically simulate the PEC reaction. Based on the EIS model, the theoretical simulation indicates three typical reactions in a PEC oxidation process, which include the charge-transfer-dominated reaction, both the charge-transfer- and adsorption-dominated reaction, and the adsorption-dominated reaction. The experimental results of EIS measurement showed that there was only one arc/semicircle on the EIS plane display when the external bias applied was below 200 mV (vs SCE) in the SSA PEC degradation whereas there were two arcs/semicircles when the externally applied bias exceeded 200 mV (vs SCE). The experimental results have a good agreement with the model simulation. The EIS method in this study provides an easier way to determine the RDS in a PEC oxidation process, which would be helpful to better control the reaction in practice.

The rheological and extrusion behaviour of blends based on phenolphthalein poly(ether-ether-sulfone) and thermotropic liquid crystalline polymer

A novel engineering thermoplastic, phenolphthalein poly (ether-ether-sulfone) (PES-C) was blended with a commercial thermotropic liquid crystalline polymer(TLCP), Vectra A950, up to 30 weight percent of TLCP. A rheometrics dynamic spectrometer (RDS-I) and a CEAST capillary rheometer, a rheoscope 1000 were employed to investigate the melt rheology and extrusion behaviour at both the low and high shearing rates. The morphologies of the blends under different shearing were observed with a scanning electron microscope(SEM) and correlated to the observed rheology. The principal normal stress differences measured with cone-and-plate geometry give a temperature-independent correlation for both blend and PES-C when they are plotted against shear stress. But the extrudate swell of the blends showed a strong temperature dependence at each shear stress. The concentration dependence of extrudate swell shows a contrary behaviour to that of the inorganic filled system. A reasonable hypothesis based on the relaxation and disorientation of TLCP during flowing in the capillary and exiting was given to explain it. The melt fracture was checked after extrusion from capillary and was discussed.

From Stereograms to Surface: How the Brain Sees the World in Depth

When we look at a scene, how do we consciously see surfaces infused with lightness and color at the correct depths? Random Dot Stereograms (RDS) probe how binocular disparity between the two eyes can generate such conscious surface percepts. Dense RDS do so despite the fact that they include multiple false binocular matches. Sparse stereograms do so even across large contrast-free regions with no binocular matches. Stereograms that define occluding and occluded surfaces lead to surface percepts wherein partially occluded textured surfaces are completed behind occluding textured surfaces at a spatial scale much larger than that of the texture elements themselves. Earlier models suggest how the brain detects binocular disparity, but not how RDS generate conscious percepts of 3D surfaces. A neural model predicts how the layered circuits of visual cortex generate these 3D surface percepts using interactions between visual boundary and surface representations that obey complementary computational rules.

Conocimientos y criterios para la evaluación de la calidad y concentración energética de los forrajes ensilados

El valor energético de los alimentos se determina mediante experimentos con animales pero que consumen gran cantidad de recursos económicos y humanos. La evaluación energética en la práctica rutinaria de laboratorio depende de la existencia de métodos de estimación basadas sobre parámetros químicos o valores de digestibilidad in vitro capaces de predecir adecuadamente la digestibilidad in vivo. El objetivo general fue generar conocimientos y criterios que mejoren la evaluación de la calidad de los forrajes ensilados y contribuir al desarrollo de ecuaciones de predicción de la digestibilidad de la materia seca (DMS) y de la energía metabolizable (EM) de los forrajes ensilados, utilizando como método de referencia a la digestibilidad obtenida in vivo con ovinos. Las fracciones analíticas como (a) FDN(mo), LIG/FDA y almidón resultaron fundamentales para el desarrollo de las ecuaciones pero otras variables derivadas de la PG fueron necesarias para reducir la magnitud de los errores de la predicción. Las tasas de PG y los tiempos en que éstas ocurrieron fueron de mayor utilidad que las PGA (i.e. Tmax, µ50 y T50). Los parámetros de la cinética de PG de los residuos insolubles en agua y detergente neutro (i.e. RIA y RIDN) permitieron mejorar la precisión de la predicción de DMS y EM reduciendo los errores de los modelos hasta 21.3 g/kg MS y 0.10 Mcal/kg MS, respectivamente (i.e DMS=450 + 10.8*RIA(Tmax) + o.6*(Lig/FDA), R²(aj) =0.94; EM=2.97 - 0.022*RIA(T50 - 0.007*(FDA) + 0.008*(Lig/FDA), R²(aj) =0.89). Las ecuaciones para predecir DFDN presentaron pobres niveles de ajuste (i.e. RDS mayora 40 g/kg FDN). Sería necesario continuar explorando las razones de la variabilidad en los resultados obtenidos. La aplicación de las ecuaciones propuestas requiere la utilización de las fracciones analíticas en base seca corregida por liofilización así como la incubación de los ensilajes en fresco pero molidos con hielo seco.