Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

A deep level transient spectroscopy technique has been used to determine the emission activation energies and capture barriers for electrons and holes in InAs self-assembled quantum dots embedded in GaAs. The ground electron and hole energies relative to their respective energy band edges of GaAs are 0.13 and 0.09 eV. Measurements show that the capture cross section of quantum dots is thermally activated. The capture barrier of quantum dots for electrons and holes are 0.30 and 0.26 eV, respectively. The results fit well with the results of photoluminescence spectroscopy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Quantum confinement effect in thin quantum wires

The electronic states and optical transition properties of three semiconductor wires Si? GaAs, and ZnSe are studied by the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for wires of square cross section with width from 2 to 5 (root 2a/2), where a is the lattice constant. It is found that these three kinds of wires have different quantum confinement properties. For Si wires, the energy gap is pseudodirect, and the wave function of the electronic ground state consists mainly of four bulk Delta states. The optical transition matrix elements are much smaller than that of a direct transition, and increase with decreasing wire width. Where the width of wire is 7.7 Angstrom, the Si wire changes from an indirect energy gap to a direct energy gap due to mixing of the bulk Gamma(15) state. For GaAs wires. the energy gap is also pseudodirect in the width range considered, but the optical transition matrix elements are larger than those of Si wires by two orders of magnitude for the same width. However, there is no transfer to a direct energy gap as the wire width decreases. For ZnSe wires, the energy gap is always direct, and the optical transition matrix elements are comparable to those of the direct energy gap bulk semiconductors. They decrease with decreasing wire width due to mixing of the bulk Gamma(1) state with other states. All quantum confinement properties are discussed and explained by our theoretical model and the semiconductor energy band structures derived. The calculated lifetimes of the Si wire, and the positions of photoluminescence peaks, are in good agreement with experimental results.

Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 mu m from a 20 period InGaAs/GaAs quantum dot supperlatice (QDS). The structure of a QDS has been-confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 mu m quantum dot infrared detectors.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Nd3+-doped LaF3 nanoparticles with a larger emission cross-section

A series of Nd3+-doped LaF3 nanoparticles with Nd3+ concentrations from 0.5 to 10 mol% were synthesized. The fluorescence intensity and lifetime of the nanoparticles at various Nd3+ doping concentration were investigated. The nanoparticles displayed strongest fluorescence intensity at 3 mol% Nd3+ concentration. Eighty-eight percentage quantum efficiency was obtained when the Nd3+ concentration was 0.5 mol%. Optical properties of nanoparticles were studied according to Judd-Ofelt theory. A larger emission cross-section, sigma(em), for F-4(3/2) -> I-4(11/2) transition of the Nd3+ ion was obtained as 3.21 x 10(-20) cm(2), which was two times of the currently reported value. The larger emission cross-section and strong fluorescence intensity demonstrate that these nanoparticles are promising materials for laser applications. (C) 2010 Published by Elsevier B. V.

Influence of in-medium nucleon-nucleon cross section on the isoscaling parameter alpha

The influence of in-medium nucleon-nucleon cross section on the isoscaling parameter a is investigated for two couples of central nuclear reactions Ca-40 + Ca-40 and Ca-60 + Ca-40; Sn-112 + Sn-112 and Sn-124 + Sn-124 within the isospin dependent quantum molecular dynamics. The calculated result shows that the influence of the in-medium nucleon-nucleon cross section on the isoscaling parameter a is mainly determined by the corresponding number of collisions, both for isospin dependent and isospin independent parameterizations. The mechanisms behind the effects of the in-medium nucleon-nucleon cross sections on the alpha are investigated in more details.

Probing the medium effect and isospin dependence of the in-medium nucleon-nucleon cross section in heavy ion collisions

Probing in-medium nucleon-nucleon (NN) cross section sigma(1)(NN)(alpha) in heavy ion collisions has been investigated by means of the isospin-dependent quantum molecular dynamics (IQMD) with the isospin- and momentum- dependent interaction (IMDI(tau)). It is found that there are the very obvious medium effect and the sensitive isospin- dependence of nuclear stopping R on the in-medium NN cross section sigma(1)(NN)(alpha) in the nuclear reactions induced by halo-neutron projectile and the same-mass stable projectile. However, R induced by the neutron-halo projectile is obviously lower than that induced by the corresponding stable projectile. In particular, there is a very obvious dependence of R on the medium effect of sigma(1)(NN)(alpha) in the whole beam energy region for the above two kinds of projectiles. Therefore, the comparison between the results of R's in the reactions induced by the neutron-halo projectile and the corresponding same-mass stable projectile is a more favourable probe for extracting the information of sigma(1)(NN)(alpha) because of adding a new judgement.

Dependence of isoscaling parameters on nucleon-nucleon cross section and momentum-dependent interaction

Influences of the isospin dependence of the in-medium nucleon-nucleon cross section and the momentum-dependant interaction (MDI) on the isotope scaling are investigated by using the isospin-dependent quantum molecular dynamics model (IQMD). The results show that both the isospin dependence of the in-medium nucleon-nucleon cross section and the momentum-dependent interaction affect the isoscaling parameters appreciably and independently. The influence caused by the isospin dependence of two-body collision is relatively larger than that from the MDI in the mean field. Aiming at exploring the implication of isoscaling behaviour, which the statistical equilibrium in the reaction is reached, the statistical properties in the mass distribution and the kinetic energy distribution of the fragments simulated by IQMD are presented.

Influence of isospin dependence of nucleon-nucleon cross section and momentum dependent interaction on the isoscaling in intermediate energy collisions

The influences of the isospin dependent in-medium nucleon-nucleon cross section and the MomentumDependent Interaction(MDI) on the isotope scaling have been investigated within the Isospin dependent Quantum Molecular Dynamics Model(IQMD). The results show that both the isospin dependent in-medium nucleon-nucleon cross section and the momentum interaction reduce the isoscaling parameter a appreciably, which means they decrease the dependence of yield ratios of two systems on the isospin difference between two systems.

Isoscaling parameter a as a possible probe of medium effect of nucleon-nucleon cross section

The medium effect of nucleon-nucleon cross section sigma(med)(NN) (alpha(m)) on the isoscaling parameter a is investigated for two central nuclear reactions Ca-40+Ca-40, Ca-60+Ca-60. within isospin-dependent quantum molecular dynamics at beam energies from 40 to 50 MeV/nucleon. It is found that there is the very obvious medium effects of nucleon-nucleon cross section sigma(med)(NN)(alpha(m)) on the isoscaling parameters a. In this case the isoscaling parameter a is a possible probe of the medium effect of nucleon-nucleon cross section sigma(med)(NN)(alpha(m)) in the heavy ion collisions. The mechanism of the above-mentioned properties is studied and discussed.