980 resultados para Power Semiconductor Devices


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An electronic ballast for multiple tubular fluorescent lamp systems is presented. The proposed structure has a high value for the power factor, a dimming capability, and soft switching of the semiconductor devices operated at high frequencies. A zero-current switching pulse width modulated SEPIC converter is used as the rectifying stage and it is controlled using the instantaneous average input current technique. The inverting stage consists of classical resonant half-bridge converter with series-resonant parallel-loaded filters. The dimming control technique is based on varying the switching frequency and monitoring the phase shift of the current drained by the filters and lamps in order to establish a closed loop control. Experimental results are presented that validate the theoretical analysis.

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This paper proposes a bridgeless boost interleaved PFC (power factor correction) converter with variable duty cycle control. The application of bridgeless technique causes reduction of conduction losses, while the interleaving technique of converters cells allows division of efforts in semiconductor devices and reduction of weight and volume of the input EMI filter. The use of variable duty cycle control has the functions of regulating the output voltage and eliminating the low order harmonic components that appears in the input current of the common interleaved power factor converters working in Discontinuous Conduction Mode (DCM). The simulation results of the proposed converter presented high power factor and a good transient response in relation to the output voltage regulation in presence of high load variations and supply voltage variations. © 2011 IEEE.

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This paper presents theoretical evaluation and experimental results to the proposed bridgeless interleaved boost PFC (power factor correction) converter. The application of bridgeless technique causes reduction of conduction losses, while the interleaving technique of the converter cells allows division of the current stress in semiconductor devices and reduction of weight and volume of the input EMI filter. In each cell of the converter, the inductor current operates in discontinuous conduction mode (DCM), which eliminates turn-on switching losses and the effects of reverse recovery in semiconductors, increasing the efficiency of the converter. The experimental results show the power factor of 0.96 for employed voltage ratio and an efficiency of 95.2 % for nominal load conditions. © 2012 IEEE.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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The admittance spectra and current-voltage (I-V) characteristics are reported of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors employing cross-linked poly(amide-imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan delta values as low as 7 x 10(-3) over most of the range. Except at the lowest voltages, the I-V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell-Wagner frequency response from which the transverse bulk hole mobility was estimated to be similar to 2 x 10(-5) cm(2) V(-1)s(-1) or similar to 5 x 10(-8) cm(2) V(-1)s(-1) depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be similar to 5 x 10(10) cm(-2) eV(-1) or similar to 9 x 10(10) cm(-2) eV(-1) again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. (c) 2012 Elsevier B.V. All rights reserved.

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The complexity of power systems has increased in recent years due to the operation of existing transmission lines closer to their limits, using flexible AC transmission system (FACTS) devices, and also due to the increased penetration of new types of generators that have more intermittent characteristics and lower inertial response, such as wind generators. This changing nature of a power system has considerable effect on its dynamic behaviors resulting in power swings, dynamic interactions between different power system devices, and less synchronized coupling. This paper presents some analyses of this changing nature of power systems and their dynamic behaviors to identify critical issues that limit the large-scale integration of wind generators and FACTS devices. In addition, this paper addresses some general concerns toward high compensations in different grid topologies. The studies in this paper are conducted on the New England and New York power system model under both small and large disturbances. From the analyses, it can be concluded that high compensation can reduce the security limits under certain operating conditions, and the modes related to operating slip and shaft stiffness are critical as they may limit the large-scale integration of wind generation.

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Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices. The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs. The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.

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In this paper the capabilities of ultra low power FPGAs to implement Wake-up Radios (WuR) for ultra low energy Wireless Sensor Networks (WSNs) are analyzed. The main goal is to evaluate the utilization of very low power configurable devices to take advantage of their speed, flexibility and low power consumption instead of the more common approaches based on ASICs or microcontrollers. In this context, energy efficiency is a key aspect, considering that usually the instant power consumption is considered a figure of merit, more than the total energy consumed by the application.

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In this paper an implementation of a Wake up Radio(WuR) with addressing capabilities based on an ultra low power FPGA for ultra low energy Wireless Sensor Networks (WSNs) is proposed. The main goal is to evaluate the utilization of very low power configurable devices to take advantage of their speed, flexibility and low power consumption instead of the traditional approaches based on ASICs or microcontrollers, for communication frame decoding and communication data control.

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In this work a novel wake-up architecture for wireless sensor nodes based on ultra low power FPGA is presented. A simple wake up messaging mechanism for data gathering applications is proposed. The main goal of this work is to evaluate the utilization of low power configurable devices to take advantage of their speed, flexibility and low power consumption compared with traditional approaches, based on ASICs or microcontrollers, for frame decoding and data control. A test bed based on infrared communications has been built to validate the messaging mechanism and the processing architecture.

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Purpose: Although manufacturers of bicycle power monitoring devices SRM and Power Tap (PT) claim accuracy to within 2.5%, there are limited scientific data available in support. The purpose of this investigation was to assess the accuracy of SRM and PT under different conditions. Methods: First, 19 SRM were calibrated, raced for 11 months, and retested using a dynamic CALRIG (50-1000 W at 100 rpm). Second, using the same procedure, five PT were repeat tested on alternate days. Third, the most accurate SRM and PT were tested for the influence of cadence (60, 80, 100, 120 rpm), temperature (8 and 21degreesC) and time (1 h at similar to300 W) on accuracy. Finally, the same SRM and PT were downloaded and compared after random cadence and gear surges using the CALRIG and on a training ride. Results: The mean error scores for SRM and PT factory calibration over a range of 50-1000 W were 2.3 +/- 4.9% and -2.5 +/- 0.5%, respectively. A second set of trials provided stable results for 15 calibrated SRM after 11 months (-0.8 +/- 1.7%), and follow-up testing of all PT units confirmed these findings (-2.7 +/- 0.1%). Accuracy for SRM and PT was not largely influenced by time and cadence; however. power output readings were noticeably influenced by temperature (5.2% for SRM and 8.4% for PT). During field trials, SRM average and max power were 4.8% and 7.3% lower, respectively, compared with PT. Conclusions: When operated according to manufacturers instructions, both SRM and PT offer the coach, athlete, and sport scientist the ability to accurately monitor power output in the lab and the field. Calibration procedures matching performance tests (duration, power, cadence, and temperature) are, however, advised as the error associated with each unit may vary.

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We report an efficient power tapping device working in near infra-red (800 nm) wavelength region based on UV-in- scribed 45° tilted fiber grating (45°-TFG) structure. Five 45°-TFGs were UV-inscribed in hydrogenated PS750 fiber using a custom-designed phase mask with different grating lengths of 3 mm, 5 mm, 9 mm, 12 mm and 15 mm, showing polarization dependent losses (PDLs) of 1 dB, 3 dB, 7 dB, 10 dB and 13 dB, respectively. The power side-tapping efficiency is clearly depending on the grating strength. It has been identified that the power tapping efficiency increases with the grating strength and deceases along the grating length. The side-tapped power profile has also been examined in azimuthal direction, showing a near-Gaussian distribution. These experimental results clearly demonstrated that 45°- TFGs may be used as in-fiber power tapping devices for applications requiring in-line signal monitoring.