准噶尔盆地低阻油藏实验研究及储层评价方法

Low resistivity reservoir is a special reservoir which is different from normal reservoir in identification and evaluation.Through core experiment and analysis, the achievement of which resistivity is resulted from clay additive electric conductivities and high bound water saturation in Junggar basin is gained. For accurately evaluating low resistivity, a good many of experiment have been completed, such as resistivity index and formation factor in hi^jher temperature and higher pressure, semi-permeability board, cation exchange, bound water, NMR (nucleus magnetism response), non-Nad water in different temperature and salinity, the experiments result show that lower resistivity has complex relation with these electric-parameters and chloric ion content in non-NaCl water.Based on comprehensive interpretation of NMR and normal resistivity data, the volume of moved water, bound water, moved oil and residual oil in the strata can be determined quantitatively and which have significant influence on reservoir recognition and perforation optimized.Experiment data (SEM mold, thin section, X ray diffraction, mercury penetration) can be used to analysis low resistivity forming and the relation between low resistivity and pore texture, to set up relation between porosity, permeability and petrophysical property. The reservoir was sorted, evaluated and described. The oil bedding in southern margin of Junggar basin is low porosity, low resistivity reservoir.Based on invasion theory of electric well-logging, modelling and inversion of resistivity well-logging are accomplished. For enhancing low resistivity resulted from higher bound water saturation and cation exchange, invasion period, invasion radius, the relation between fluid distribution in pore and response of laterolog logging have been studied. Virgin zone resistivity, invasion zone resistivity and invasion radius were inversed and which enhanced evaluation accuracy of reservoir. The method was used to process well-logging data in Luliang oilfield and southern margin in Junggar basin, and reservoir resistivity was enhanced effectively, appropriate oil saturation gained and it has better effect on oil exploration.

Fabrication and characterisation of semiconductor nanowires and metal interconnects

One-dimensional semiconductor nanowires are considered to be promising materials for future nanoelectronic applications. However, before these nanowires can be integrated into such applications, a thorough understanding of their growth behaviour is necessary. In particular, methods that allow the control over nanowire growth are deemed especially important as it is these methods that will enable the control of nanowire dimensions such as length and diameter (high aspect ratios). The production of nanowires with high-aspect ratios is vital in order to take advantage of the unique properties experienced at the nanoscale, thus allowing us to maximise their use in devices. Additionally, the development of low-resistivity interconnects is desirable in order to connect such nanowires in multi-nanowire components. Consequently, this thesis aims to discuss the synthesis and characterisation of germanium (Ge) nanowires and platinum (Pt) interconnects. Particular emphasis is placed on manipulating the nanowire growth kinetics to produce high aspect ratio structures. The discussion of Pt interconnects focuses on the development of low-resistivity devices and the electrical and structural analysis of those devices. Chapter 1 reviews the most critical aspects of Ge nanowire growth which must be understood before they can be integrated into future nanodevices. These features include the synthetic methods employed to grow Ge nanowires, the kinetic and thermodynamic aspects of their growth and nanowire morphology control. Chapter 2 outlines the experimental methods used to synthesise and characterise Ge nanowires as well as the methods used to fabricate and analyse Pt interconnects. Chapter 3 discusses the control of Ge nanowire growth kinetics via the manipulation of the supersaturation of Ge in the Au/Ge binary alloy system. This is accomplished through the use of bi-layer films, which pre-form Au/Ge alloy catalysts before the introduction of the Ge precursor. The growth from these catalysts is then compared with Ge nanowire growth from standard elemental Au seeds. Nanowires grown from pre-formed Au/Ge alloy seeds demonstrate longer lengths and higher growth rates than those grown from standard Au seeds. In-situ TEM heating on the Au/Ge bi-layer films is used to support the growth characteristics observed. Chapter 4 extends the work of chapter 3 by utilising Au/Ag/Ge tri-layer films to enhance the growth rates and lengths of Ge nanowires. These nanowires are grown from Au/Ag/Ge ternary alloy catalysts. Once again, the supersaturation is influenced, only this time it is through the simultaneous manipulation of both the solute concentration and equilibrium concentration of Ge in the Au/Ag/Ge ternary alloy system. The introduction of Ag to the Au/Ge binary alloy lowers the equilibrium concentration, thus increasing the nanowire growth rate and length. Nanowires with uniform diameters were obtained via synthesis from AuxAg1-x alloy nanoparticles. Manifestation of the Gibbs-Thomson effect, resulting from the dependence of the mean nanowire length as a function of diameter, was observed for all of the nanowires grown from the AuxAg1-x nanoparticles. Finally, in-situ TEM heating was used to support the nanowire growth characteristics. Chapter 5 details the fabrication and characterisation of Pt interconnects deposited by electron beam induced deposition of two different precursors. The fabrication is conducted inside a dual beam FIB. The electrical and structural characteristics of interconnects deposited from a standard organometallic precursor and a novel carbon-free precursor are compared. The electrical performance of the carbon-free interconnects is shown to be superior to that of the organometallic devices and this is correlated to the structural composition of both interconnects via in-situ TEM heating and HAADF-STEM analysis. Annealing of the interconnects is carried out under two different atmospheres in order to reduce the electrical resistivity even further. Finally, chapter 6 presents some important conclusions and summarises each of the previous chapters.

Novel processes, test structures and characterisation for future germanium technologies

In order to widely use Ge and III-V materials instead of Si in advanced CMOS technology, the process and integration of these materials has to be well established so that their high mobility benefit is not swamped by imperfect manufacturing procedures. In this dissertation number of key bottlenecks in realization of Ge devices are investigated; We address the challenge of the formation of low resistivity contacts on n-type Ge, comparing conventional and advanced rapid thermal annealing (RTA) and laser thermal annealing (LTA) techniques respectively. LTA appears to be a feasible approach for realization of low resistivity contacts with an incredibly sharp germanide-substrate interface and contact resistivity in the order of 10 -7 Ω.cm2. Furthermore the influence of RTA and LTA on dopant activation and leakage current suppression in n+/p Ge junction were compared. Providing very high active carrier concentration > 1020 cm-3, LTA resulted in higher leakage current compared to RTA which provided lower carrier concentration ~1019 cm-3. This is an indication of a trade-off between high activation level and junction leakage current. High ION/IOFF ratio ~ 107 was obtained, which to the best of our knowledge is the best reported value for n-type Ge so far. Simulations were carried out to investigate how target sputtering, dose retention, and damage formation is generated in thin-body semiconductors by means of energetic ion impacts and how they are dependent on the target physical material properties. Solid phase epitaxy studies in wide and thin Ge fins confirmed the formation of twin boundary defects and random nucleation growth, like in Si, but here 600 °C annealing temperature was found to be effective to reduce these defects. Finally, a non-destructive doping technique was successfully implemented to dope Ge nanowires, where nanowire resistivity was reduced by 5 orders of magnitude using PH3 based in-diffusion process.

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device.

Guiding of Relativistic Electron Beams in Solid Targets by Resistively Controlled Magnetic Fields

Guided transport of a relativistic electron beam in solid is achieved experimentally by exploiting the strong magnetic fields created at the interface of two metals of different electrical resistivities. This is of substantial relevance to the Fast Ignitor approach to fusion energy production [M. Tabak et al., Phys. Plasmas 12, 057305 (2005)], since it allows the electron deposition to be spatially tailored-thus adding substantial design flexibility and preventing inefficiencies due to electron beam spreading. In the experiment, optical transition radiation and thermal emission from the target rear surface provide a clear signature of the electron confinement within a high resistivity tin layer sandwiched transversely between two low resistivity aluminum slabs. The experimental data are found to agree well with numerical simulations.

An Integrated Hydro geological Study of the Muvattupuzha River Basin, Kerala, India

The present investigation on the Muvattupuzha river basin is an integrated approach based on hydrogeological, geophysical, hydrogeochemical parameters and the results are interpreted using satellite data. GIS also been used to combine the various spatial and non-spatial data. The salient finding of the present study are accounted below to provide a holistic picture on the groundwaters of the Muvattupuzha river basin. In the Muvattupuzha river basin the groundwaters are drawn from the weathered and fractured zones. The groundwater level fluctuations of the basin from 1992 to 2001 reveal that the water level varies between a minimum of 0.003 m and a maximum of 3.45 m. The groundwater fluctuation is affected by rainfall. Various aquifer parameters like transmissivity, storage coefficient, optimum yield, time for full recovery and specific capacity indices are analyzed. The depth to the bedrock of the basin varies widely from 1.5 to 17 mbgl. A ground water prospective map of phreatic aquifer has been prepared based on thickness of the weathered zone and low resistivity values (<500 ohm-m) and accordingly the basin is classified in three phreatic potential zones as good, moderate and poor. The groundwater of the Muvattupuzha river basin, the pH value ranges from 5.5 to 8.1, in acidic nature. Hydrochemical facies diagram reveals that most of the samples in both the seasons fall in mixing and dissolution facies and a few in static and dynamic natures. Further study is needed on impact of dykes on the occurrence and movement of groundwater, impact of seapages from irrigation canals on the groundwater quality and resources of this basin, and influence of inter-basin transfer of surface water on groundwater.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Degradação de resíduos e alterações na resistividade elétrica, pH e Eh

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Decomposição de resíduos sólidos domiciliares e variações na resistividade e cargabilidade

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Método da eletrorresistividade aplicado no monitoramento temporal da pluma de contaminação em área de disposição de resíduos sólidos urbanos

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Aplicação da técnica de caminhamento elétrico em área contaminada por derivados de petróleo

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Prospecção geofísica em ocorrência de cobre localizada na bacia sedimentar do Camaquã (RS)

Estudos de pesquisa mineral são fundamentais para o reconhecimento e a incorporação de novas reservas. Esse trabalho apresenta os resultados de aplicação do método geofísico da eletrorresistividade numa ocorrência mineralizada em carbonatos de cobre, por meio da técnica de caminhamento elétrico em arranjo azimutal. A área de estudos está inserida na bacia sedimentar do Camaquã, formada por um conjunto de unidades estratigráficas sedimentares e vulcanogênicas, onde são descritas diversas ocorrências cupríferas. A presença de azurita e malaquita em fraturas e zonas de maior porosidade em arenito encaixante define a geologia local. Os modelos de inversão revelam anomalias circulares de resistividade moderada para até 25m abaixo da ocorrência aflorante e anomalias de baixa resistividade em profundidades abaixo de 25m, além de áreas adjacentes com alta resistividade. Indicadores de mineralização descritos para ocorrências de cobre estudadas, no âmbito da bacia sedimentar do Camaquã, ocorrem na área de estudos e permitem caracterização em termos de resistividade elétrica. Áreas com silicificação apresentam alta resistividade, enquanto que valores intermediários são atribuídos a zonas com carbonatação e, finalmente, áreas de baixa resistividade, provavelmente, indicam concentrações de sulfetos disseminados.

Estudo geofísico de vazamento de combustíveis em posto de abastecimento

The geoelectrical methods have been widely used in research involving the evaluation and monitoring of areas with environmental risk. This paper presents the results of applying the Electrical Resistivity method by electrical profiling technique to investigate the fuel presence in soil and groundwater proceeding in station gas, located in an urban area Caçapava do Sul (RS), on soil in situ, from modification of Caçapava granite. The results suggest an association between low resistivity anomalies zone with potentially degraded from underground tanks worthless on the form of free phase, now represented as residual phase. The results of the model inversion are consistent with the standards expected for hydrocarbons present in the saturated zone. The electrical resistivity method proved to be an important tool for assessment and environmental monitoring in conjunction with direct methods of investigation.

Geoelectrical prospection of disseminated sulfide mineral occurrences in Camaquã Sedimentary Basin, Rio Grande do Sul State, Brazil

The mineral exploration is a complex activity that should involve a combination of direct and indirect techniques of geological investigation. The growing demand for base metals in the national and international market provides the revaluation of mineral occurrences that can become deposits and mines. This paper presents the results of the electrical resistivity and induced polarization geophysical methods in azimuthal arrangement, applied in a mineral occurrence of disseminated copper sulfides, previously studied through trenches and core drilling, located in the Camaquã Sedimentary Basin, Rio Grande do Sul State, Brazil. The inversion models indicate the coincidence of high chargeability and low resistivity values. The integration of geophysical data permitted the elaboration of 3D attributes visualization models for the mineralization enclosed in volcanic tuffs. The integrated geophysical and geological analysis indicates the potential of a new mineralized area. © 2012 Sociedade Brasileira de Geofísica.