982 resultados para III-V NITRIDE
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The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(Ga)As, Al(Ga)As, and GaAs(Sb) nanowires by metal-organic chemical vapour deposition are investigated, Au colloidal nanoparticles are employed to catalyze nanowire growth. Zinc blende or wurtzite crystal structures with some stacking faults are observed for these nanowires by high resolution transmission electron microscope. In addition, the properties of heterostructure nanowires including GaAs-AlGaAs core-shell nanowires, GaAs-InAs nanowires, and GaAs-GaSb nanowires are reported. Single nanowire luminescence properties from optically bright InP nanowires are reported. Interesting phenomena such as two-temperature procedure, nanowire height enhancement of isolated ternary InGaAs nanowires, kinking effect of InAs-GaAs heterostructure nanowires, and unusual growth property of GaAs-GaSb heterostructure nanowires are investigated. These nanowires will play an essential role in future optoelectronic devices.
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We have investigated the structural properties and photoluminescence of novel axial and radial heterostructure III-V nanowires, fabricated by metalorganic chemical vapour deposition. Segments of InGaAs have been incorporated within GaAs nanowires, to create axial heterostructure nanowires which exhibit strong photoluminescence. Photoluminescence is observed from radial heterostructure nanowires (core-shell nanowires), consisting of GaAs cores with AlGaAs shells. Core-multishell nanowires, of GaAs cores clad in several alternating layers of thick AlGaAs barrier shells and thin GaAs quantum well shells, exhibit a blue-shifted photoluminescence peak arising from quantum confinement effects. © 2006 Crown Copyright.
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Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
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Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into account the deformation potential of the core states. This revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. Comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies.