Investigation on the properties of high reflective mirror prepared by ion-beam sputtering

The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering (IBS). When the incident light entered with 45 degrees, the reflectance of p-polarized light at 1064 nm exceeded 99.5%. Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing (STL) technique. Laser-induced damage threshold (LIDT) was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark III-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm2, which was 5 J/cm2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.

Influence of oxygen post-treatment on laser-induced damage of antireflection coatings prepared by electron-beam evaporation and ion beam assisted deposition

Antireflection coatings at the center wavelength of 1053 nm were prepared on BK7 glasses by electron-beam evaporation deposition (EBD) and ion beam assisted deposition (IBAD). Parts of the two kinds of samples were post-treated with oxygen plasma at the environment temperature after deposition. Absorption at 1064 nm was characterized based on surface thermal lensing (STL) technique. The laser-induced damage threshold (LIDT) was measured by a 1064-nm Nd:YAG laser with a pulse width of 38 ps. Leica-DMRXE Microscope was applied to gain damage morphologies of samples. The results revealed that oxygen post-treatment could lower the absorption and increase the damage thresholds for both kinds of as-grown samples. However, the improving effects are not the same. (c) 2008 Elsevier B.V. All rights reserved.

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

Focused ion beam etching of GaN

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10 -4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.