The mechanical properties of an aluminum alloy by plasma-based ion implantation and solution-aging treatment

The age-strengthening 2024 aluminum alloy was modified by a combination of plasma-based ion implantation (PBII) and solution-aging treatments. The depth profiles of the implanted layer were investigated by X-ray photoelectron spectroscopy (XPS). The structure was studied by glancing angle X-ray diffraction (GXRD). The variation of microhardness with the indenting depth was measured by a nanoindenter. The wear test was carried on with a pin-on-disk wear tester. The results revealed that when the aluminum alloys were implanted with nitrogen at the solution temperature, then quenched in the vacuum chamber followed by an artificial aging treatment for an appropriate time, the amount of AIN precipitates by the combined treatment were more than that of the specimen implanted at ambient temperature. Optimum surface mechanical properties were obtained. The surface hardness was increased and the weight loss in a wear test decreased too.

Silicide formation and the interaction of metals with polycrystalline Si

The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi₂. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni₂Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi₂ formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi₂ , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd₂Si between the Cr film and the Si substrate, CrSi₂ starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi₂ is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd₂Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive ³¹Si (T_1/2 = 2.26 h) was used to study the formation of CrSi₂ on Pd₂Si. It is established from this experiment that the growth of CrSi₂ takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd₂Si bonds, making free Si atoms available for the growth process.

The role of CrSi₂ in Pd-Al metallization on Si was studied. It is established that a thin CrSi₂ layer can be used as a diffusion barrier to prevent Al from interacting with Pd₂Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV ⁴He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.

Swift heavy ion induced surface modification for tailoring coercivity in Fe–Ni based amorphous thin films

Fe–Ni based amorphous thin films were prepared by thermal evaporation. These films were irradiated by 108 MeV Ag8+ ions at room temperature with fluences ranging from 1 1012 to 3 1013 ions/cm2 using a 15 UD Pelletron accelerator. Glancing angle x-ray diffraction studies showed that the irradiated films retain their amorphous nature. The topographical evolution of the films under swift heavy ion SHI bombardment was probed using atomic force microscope and it was noticed that surface roughening was taking place with ion beam irradiation. Magnetic measurements using a vibrating sample magnetometer showed that the coercivity of the films increases with an increase in the ion fluence. The observed coercivity changes are correlated with topographical evolution of the films under SHI irradiation. The ability to modify the magnetic properties via SHI irradiation could be utilized for applications in thin film magnetism

Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag7+ ion irradiation

We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co77Fe23 thin films on silicon substrates using 100 MeV Ag7+ ions fluences of 1 1011 ions/ cm2, 1 1012 ions/cm2, 1 1013 ions/cm2, and 3 1013 ions/cm2. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated

Evolution of structural and magnetic properties of Co–Fe based metallic glass thin films with thermal annealing

Ultra thin films based on CoFe were prepared from a composite target employing thermal evaporation. The microstructure of the films was modified by thermal annealing. The relationship between microstructure and magnetic properties of the films was investigated using techniques like glancing angle X-ray diffraction (GXRD), transmission electron microscopy (TEM) and vibrating sample magnetometry (VSM). The GXRD and TEM investigations showed an onset of crystallization of CoFe at around 373 K. The magnetic softness of the films improved with thermal annealing but at higher annealing temperature it is found to be deteriorating. Annealing inducedmodification of surface morphology of the alloy thin filmswas probed by atomic force microscopy (AFM). Surface smoothening was observed with thermal annealing and the observed magnetic properties correlate well with surface modifications induced by thermal annealing

Using Polycarbonate Membranes as Templates for the Preparation of Au Nanostructures for Surface-Enhanced Raman Scattering

Polycarbonate membranes (PCM) of various pores sizes (400, 200, 100 and 50 nm) were used as templates for gold deposition. The electrodeposition from gold ions resulted in the formation of gold nanotubes when large pores size PCMs (400 and 200 nm) were used. On the other hand, gold nanowires were predominant for the PCMs with smaller pores size (100 and 50 nm). Surface-enhanced Raman scattering (SERS) from the probe molecule 4-mercaptopyridine (4-MPy) was obtained from all these nanostructures. The SERS efficiency of the substrates produced using the PC M templates were compared to two commonly used SERS platforms: a roughened gold electrode and gold nanostructures electrodeposited through organized polystyrene spheres (PSS). The SERS signal of the probe molecule increased as the pore diameter of the PCM template decreased. Moreover, the SERS efficiency from the nanostructures produced using 50 nm PCM templates was four and two times better than the signal from the roughened gold electrode and the PSS template, respectively. The SERS substrates prepared using PCM templates were more homogenous over a larger area (ca. 1 cm(2)), presented better spatial and sample to sample reproducibility than the other substrates. These results show that SERS substrates prepared using PCM templates are promising for the fabrication of planar SERS platforms for analytical/bioanalytical applications.

Plasma nitriding of sintered AISI 316L at several temperatures

Samples of sintered AISI 316L stainless steel were plasma nitrided in a mixture of H-2-20% N-2, for 3 or 4 h. The treatment temperature was selected in 400-550 degreesC interval, in steps of 50 degreesC. X-ray diffraction (glancing angle geometry-GAXRD), conversion electron Mossbauer spectroscopy (CEMS), optical microscopy and Vickers microhardness were used as analytical techniques. For T greater than or equal to 500 degreesC and t = 4 h, a 40-mum layer is formed. The GAXRD results showed a transformation of the austenite gamma phase to the martensite in the sinterization process and showed as well, that the gamma' (Fe4N) phase is the predominant nitride besides small amounts of epsilon-Fe2N, gamma(N) CrN, Cr2O3 and the fcc nitrogen supersatured solid phase gamma(N). The CrN phase seems to decrease with temperature while the gamma(N) phase fraction is almost less than or equal to10%, independently on the temperature. The CEMS results indicated that while the gamma(N) fraction decreases with temperature of plasma nitriding, the gamma' fraction increases proportionally. (C) 2003 Elsevier B.V. All rights reserved.

Application of Mossbauer spectroscopy to the study of corrosion resistance in NaCl solution of plasma nitrided AISI 316L stainless steel

Corrosion research in steels is one of the areas in which Mossbauer spectroscopy has become a required analytical technique, since it is a powerful tool for both identifying and quantifying distinctive phases (which contain Fe) with accuracy. In this manuscript, this technique was used to the study of corrosion resistance of plasma nitrided AISI 316L samples in the presence of chloride anions. Plasma nitriding has been carried out using dc glow-discharge, nitriding treatments, in medium of 80 vol.% H-2 and 20 vol.% N-2, at 673 K, and at different time intervals: 2, 4, and 7 h. Treated samples were characterized by means of phase composition and morphological analysis, and electrochemical tests in NaCl aerated solution in order to investigate the influence of treatment time on the microstructure and the corrosion resistance, proved by conversion electron Mossbauer spectroscopy (CEMS), glancing angle X-ray diffraction (GAXRD), scanning electron microscopy (SEM) and potentiodynamic polarization. A modified layer of about 8 gin was observed for all the nitrided samples, independently of the nitriding time. A metastable phase, S phase or gamma(N), was produced. It seems to be correlated with gamma`-Fe-4 N phase. If the gamma(N) fraction decreases, the gamma` fraction increases. The gamma(N) magnetic nature was analyzed. When the nitriding time increases, the results indicate that there is a significant reduction in the relative fraction of the magnetic gamma(N) (in) phase. In contrast, the paramagnetic gamma(N) (p) phase increases. The GAXRD analysis confirms the Mossbauer results, and it also indicates CrN traces for the sample nitrided for 7 h. Corrosion results demonstrate that time in the plasma nitriding treatment plays an important role for the corrosion resistance. The sample treated for 4 h showed the best result of corrosion resistance. It seems that the epsilon/gamma` fraction ratio plays an important role in thin corrosion resistance since this sample shows the maximum value for this ratio. (c) 2008 Published by Elsevier B.V.

Spray deposition and losses in potato as a function of air-assistance and sprayer boom angle

A cultura da batata possui grande expressão econômica dentro do cenário agrícola. Para isso, equipamentos e técnicas de aplicação de produtos fitossanitários vêm sendo desenvolvidos visando melhorar o rendimento econômico da cultura. Neste sentido, experimentos foram conduzidos no delineamento em blocos ao acaso na cultura da batata cv. Ágata. Objetivando avaliar o efeito da assistência de ar combinada a diferentes ângulos de aplicação sobre a deposição da pulverização, bem como as perdas da calda para o solo utilizou-se um pulverizador com e sem assistência de ar junto à barra de pulverização posicionada a +30º, 0º e -30º (sinal + a favor e - contrário ao deslocamento) em relação a vertical. O volume de calda foi 400 L ha-1 utilizando-se pontas de jato cônico vazio JA-4 na pressão de 633 kPa. Para a avaliação dos depósitos utilizou-se um traçador cúprico. Os depósitos foram removidos dos folíolos por lavagem com água destilada, em ambas as superfícies foliares, nas posições superior e inferior das plantas de batata e quantificados por espectrofotometria de absorção atômica. As perdas da pulverização foram avaliadas em coletores plásticos colocados nas entrelinhas das parcelas experimentais. Os níveis dos depósitos do traçador cúprico nas diferentes posições da planta foram analisados pelo teste estatístico T² de Hotteling. Os maiores depósitos foram obtidos com a barra posicionada a 0º e +30º, em presença da assistência de ar, tanto na posição superior quanto inferior da planta. A presença do ar, além de propiciar maiores depósitos na parte inferior das plantas, possibilitou maior uniformidade na distribuição deles. As perdas da pulverização ficaram abaixo de 4%.

High-sensitivity refractive index sensor based on large-angle tilted fiber grating with carbon nanotube deposition

This paper presents a highly sensitive ambient refractive index (RI) sensor based on 81° tilted fiber grating (81°-TFG) structure UV-inscribed in standard telecom fiber (62.5μm cladding radius) with carbon nanotube (CNT) overlay deposition. The sensing mechanism is based on the ability of CNT to induce change in transmitted optical power and the high sensitivity of 81°-TFG to ambient refractive index. The thin CNT film with high refractive index enhances the cladding modes of the TFG, resulting in the significant interaction between the propagating light and the surrounding medium. Consequently, the surrounding RI change will induce not only the resonant wavelength shift but also the power intensity change of the attenuation band in the transmission spectrum. Result shows that the change in transmitted optical power produces a corresponding linear reduction in intensity with increment in RI values. The sample shows high sensitivities of ∼207.38nm/RIU, ∼241.79nm/RIU at RI range 1.344-1.374 and ∼113.09nm/RIU, ∼144.40nm/RIU at RI range 1.374-1.392 (for X-pol and Y-pol respectively). It also shows power intensity sensitivity of ∼ 65.728dBm/RIU and ∼ 45.898 (for X-pol and Y-pol respectively). The low thermal sensitivity property of the 81°-TFG offers reduction in thermal cross-sensitivity and enhances specificity of the sensor.

Memory effect in the deposition of C20 fullerenes on a diamond surface

In this paper, the deposition of C-20 fullerenes on a diamond (001)-(2x1) surface and the fabrication of C-20 thin film at 100 K were investigated by a molecular dynamics (MD) simulation using the many-body Brenner bond order potential. First, we found that the collision dynamic of a single C-20 fullerene on a diamond surface was strongly dependent on its impact energy. Within the energy range 10-45 eV, the C-20 fullerene chemisorbed on the surface retained its free cage structure. This is consistent with the experimental observation, where it was called the memory effect in "C-20-type" films [P. Melion , Int. J. Mod. B 9, 339 (1995); P. Milani , Cluster Beam Synthesis of Nanostructured Materials (Springer, Berlin, 1999)]. Next, more than one hundred C-20 (10-25 eV) were deposited one after the other onto the surface. The initial growth stage of C-20 thin film was observed to be in the three-dimensional island mode. The randomly deposited C-20 fullerenes stacked on diamond surface and acted as building blocks forming a polymerlike structure. The assembled film was also highly porous due to cluster-cluster interaction. The bond angle distribution and the neighbor-atom-number distribution of the film presented a well-defined local order, which is of sp(3) hybridization character, the same as that of a free C-20 cage. These simulation results are again in good agreement with the experimental observation. Finally, the deposited C-20 film showed high stability even when the temperature was raised up to 1500 K.

Room-temperature tilted-target sputtering deposition of highly transparent and low sheet resistance Al doped ZnO electrodes

Target-tilted room temperature sputtering of aluminium doped zinc oxide (AZO) provides transparent conducting electrodes with sheet resistances of <10 Ω □-1 and average transmittance in the visible region of up to 84%. The properties of the AZO electrode are found to be strongly dependent on the target-tilting angle and film thickness. The AZO electrodes showed comparable performance to commercial indium tin oxide (ITO) electrodes in organic photovoltaic (OPV) devices. OPV devices containing a bulk heterojunction active layer comprised of poly(3-n-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) and an AZO transparent conducting electrode had a power conversion efficiency (PCE) of up to 2.5% with those containing ITO giving a PCE of 2.6%. These results demonstrate that AZO films are a good alternative to ITO for transparent conducting electrodes.

Characterization of strain in Si1-xGex films using multiple angle of incidence ellipsometry

In this letter we characterize strain in Si1-xGex based heterojunction bipolar transistors and modulation doped field effect transistors grown by rapid thermal chemical vapor deposition exploiting the phenomenon of strain-induced birefringence. The technique used is multiple angle of incidence ellipsometry at a wavelength of 670 nm to measure the ordinary and extraordinary refractive indices of the Si1-xGex films. We report measurements on thin fully strained films (with thicknesses less than the critical thickness) with Ge concentration varying from 9% to 40% with an accuracy of the order of 1 part in 10(4) and propose an empirical relation between the difference in the ordinary and extraordinary refractive indices (deltan) and the Ge concentration (x) given by deltan(x)=0.18x-0.12x(2). (C) 2000 American Institute of Physics. [S0003-6951(00)03948-6].

Two-dimensional simulation of an electron cyclotron resonance plasma source with self-consistent power deposition

Using a refined two-dimensional hybrid-model with self-consistent microwave absorption, we have investigated the change of plasma parameters such as plasma density and ionization rate with the operating conditions. The dependence of the ion current density and ion energy and angle distribution function at the substrate surface vs. the radial position, pressure and microwave power were discussed. Results of our simulation can be compared qualitatively with many experimental measurements.

Small angle X-ray scattering of the colloidal crystal

The monodisperse polystyrene spheres are assembled into the colloidal crystal on the glass substrate by vertical deposition method, which is aimed at the so-called photonic crystal applications. The structural information of the bulk colloidal crystal is crucial for understanding the crystal growth mechanism and developing the various applications of colloidal crystal. Small-angle X-ray scattering (SAXS) technique was used to obtain the bulk structure of the colloidal crystal at Beamline 1W2A of BSRF. It is found that the SAXS pattern is sensitive to the relative orientation between the colloidal sample and the incident X-ray direction. The crystal lattice was well distinguished and determined by the SAXS data.