Room-temperature tilted-target sputtering deposition of highly transparent and low sheet resistance Al doped ZnO electrodes


Autoria(s): Raju Nagiri, R. C.; Yambem, S. D.; Lin, Q.; Burn, P. L.; Meredith, P.
Data(s)

2015

Resumo

Target-tilted room temperature sputtering of aluminium doped zinc oxide (AZO) provides transparent conducting electrodes with sheet resistances of <10 Ω □-1 and average transmittance in the visible region of up to 84%. The properties of the AZO electrode are found to be strongly dependent on the target-tilting angle and film thickness. The AZO electrodes showed comparable performance to commercial indium tin oxide (ITO) electrodes in organic photovoltaic (OPV) devices. OPV devices containing a bulk heterojunction active layer comprised of poly(3-n-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) and an AZO transparent conducting electrode had a power conversion efficiency (PCE) of up to 2.5% with those containing ITO giving a PCE of 2.6%. These results demonstrate that AZO films are a good alternative to ITO for transparent conducting electrodes.

Identificador

http://eprints.qut.edu.au/86734/

Relação

DOI:10.1039/c5tc00695c

Raju Nagiri, R. C., Yambem, S. D., Lin, Q., Burn, P. L., & Meredith, P. (2015) Room-temperature tilted-target sputtering deposition of highly transparent and low sheet resistance Al doped ZnO electrodes. Journal of Materials Chemistry C, 3(20), pp. 5322-5331.

Direitos

© The Royal Society of Chemistry.

Fonte

School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty

Palavras-Chave #Butyric acid #Conductive films #Heterojunctions #Sheet resistance #Tin oxides #Zinc oxide #Bulk heterojunction #Doped zinc oxides #Indium tin oxide electrodes #Organic photovoltaic devices #Power conversion efficiencies #Room temperature #Target sputtering #Transparent conducting electrodes #Electrodes
Tipo

Journal Article