996 resultados para GATE CONTROL


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We describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting in the formation of discontinuous wire deposition. The metal deposits on the nanotubes are removed with lift-off due to the poor adhesion of metal to the nanotube surface. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gaped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems. © 2003 Materials Research Society.

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In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimised. © 2010 IEEE.

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Model Predictive Control (MPC) is increasingly being proposed for application to miniaturized devices, fast and/or embedded systems. A major obstacle to this is its computation time requirement. Continuing our previous studies of implementing constrained MPC on Field Programmable Gate Arrays (FPGA), this paper begins to exploit the possibilities of parallel computation, with the aim of speeding up the MPC implementation. Simulation studies on a realistic example show that it is possible to implement constrained MPC on an FPGA chip with a 25MHz clock and achieve MPC implementation rates comparable to those achievable on a Pentium 3.0 GHz PC. Copyright © 2007 International Federation of Automatic Control All Rights Reserved.

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This paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practice. ©2008 IEEE.

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In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, the AVC technique can clamp the highest collector-to-emitter voltage to a pre-set clamping voltage level. By selecting the value of the clamping voltage, the difference among series connected IGBTs can be controlled in an accepted range. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimized. © 2011 EPE Association - European Power Electr.

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New embedded predictive control applications call for more eficient ways of solving quadratic programs (QPs) in order to meet demanding real-time, power and cost requirements. A single precision QP-on-a-chip controller is proposed, implemented in afield-programmable gate array (FPGA) with an iterative linear solver at its core. A novel offline scaling procedure is introduced to aid the convergence of the reduced precision solver. The feasibility of the proposed approach is demonstrated with a real-time hardware-in-the-loop (HIL) experimental setup where an ML605 FPGA board controls a nonlinear model of a Boeing 747 aircraft running on a desktop PC through an Ethernet link. Simulations show that the quality of the closed-loop control and accuracy of individual solutions is competitive with a conventional double precision controller solving linear systems using a Riccati recursion. © 2012 IFAC.

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With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance Cgc, that dominate transient voltage sharing. As Cgc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV\ce/dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dVce/dt. Switching losses associated with this technique are minimized by the adaptive dv /dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique. © 2012 IEEE.

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This paper presents the use of an Active Voltage Control (AVC) technique for balancing the voltages in a series connection of Insulated Gate Bipolar Transistors (IGBTs). The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, a temporary clamp technique is introduced. The temporary clamp technique clamps the collector-emitter voltage of all the series connected IGBTs at the ideal voltage so that the IGBTs will share the voltage evenly. © 2012 IEEE.

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Alternative and more efficient computational methods can extend the applicability of model predictive control (MPC) to systems with tight real-time requirements. This paper presents a system-on-a-chip MPC system, implemented on a field-programmable gate array (FPGA), consisting of a sparse structure-exploiting primal dual interior point (PDIP) quadratic program (QP) solver for MPC reference tracking and a fast gradient QP solver for steady-state target calculation. A parallel reduced precision iterative solver is used to accelerate the solution of the set of linear equations forming the computational bottleneck of the PDIP algorithm. A numerical study of the effect of reducing the number of iterations highlights the effectiveness of the approach. The system is demonstrated with an FPGA-in-the-loop testbench controlling a nonlinear simulation of a large airliner. This paper considers many more manipulated inputs than any previous FPGA-based MPC implementation to date, yet the implementation comfortably fits into a midrange FPGA, and the controller compares well in terms of solution quality and latency to state-of-the-art QP solvers running on a standard PC. © 1993-2012 IEEE.

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A field programmable gate array (FPGA)-based predictive controller for a spacecraft rendezvous manoeuvre is presented. A linear time varying prediction model is used to accommodate elliptical orbits, and a variable prediction horizon is used to facilitate finite time completion of manoeuvres. The resulting constrained optimisation problems are solved using a primal dual interior point algorithm. The majority of the computational demand is in solving a set of linear equations at each iteration of this algorithm. To accelerate this operation, a custom circuit is implemented, using a combination of Mathworks HDL Coder and Xilinx System Generator for DSP, and used as a peripheral to a MicroBlaze soft core processor. The system is demonstrated in closed loop by linking the FPGA with a simulation of the plant dynamics running in Simulink on a PC, using Ethernet. © 2013 EUCA.

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The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

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This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.

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The hybrid integrated photonic switch and not logic gate based on the integration of a GaAs VCSEL (Vertical Cavity Surface Emitting Lasers) and a MISS (Metal-Insulator-Semiconductor Switches) device are reported. The GaAs VCSEL is fabricated by selective etching and selective oxidation. The Ultra-Thin semi-Insulating layer (UTI) of the GaAs MISS is formed by using oxidation of A1As that is grown by MBE. The accurate control of UTI and the processing compatibility between VCSEL and MISS are solved by this procedure. Ifa VCSEL is connected in series with a MISS, the integrated device can be used as a photonic switch, or a light amplifier. A low switching power (10 mu W) and a good on-off ratio (17 dB contrast) have been achieved. If they are connected in parallel, they perform a photonic NOT gate operation.

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We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that modifies the exciton confinement. We infer from the experimental results, combined with calculations, that the exciton Aharonov-Bohm effect may account for the observed effects.

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A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.