992 resultados para Crystalline system


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Dendritic growth of trigonal and square bipyramidal structures of LiTaO3 nanocrystallites, of 19-30 nm size, was observed when 1.5Li(2)O-2B(2)O(3)-0.5Ta(2)O(5) glasses were subjected to controlled heat treatment between 530 degrees C and 560 degrees C/3 h. X-ray diffraction and Raman spectral studies carried out on the heat-treated samples confirmed the formation of a LiTaO3 phase along with a minor phase of ferroelectric Li2B4O7. The sample that was heat-treated at 550 degrees C/3 h was found to possess similar to 26 nm sized crystallites which exhibited a pyroelectric coefficient as high as 15 nC cm(-2) K-1 which is in the same range (23 nC cm(-2) K-1) as that of single crystalline LiTaO3 at room temperature. The corresponding figures of merit that were calculated for the fast pulse detector (F-i), the large area pyroelectric detector (F-v) and the pyroelectric point detector (F-D) were 0.517 x 10(-10) m V-1, 0.244 m(2) C-1 and 1.437 x 10(-5) Pa-1/2, respectively. Glass nanocrystal composites comprising similar to 30 nm sized crystallites exhibited broad Maker fringes and the second harmonic intensity emanated from these was 0.5 times that of KDP single crystals.

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Presently Li/MnO2 is one of the widely used primary battery for a variety of applications. As the global resources for Na are plentiful in relation to those for Li, Na/MnO2 primary battery is expected to be an economical, viable alternate to Li/MnO2 system. But marginal inferior properties of Na/MnO2, which arise due to the differences in properties between Li and Na, are inevitable. In the present work, Na/MnO2 and Li/MnO2 laboratory scale primary cells in non-aquebus electrolytes are assembled and their electrochemical properties are studied in similar experimental conditions. The MnO2 used for these studies is prepared from KMnO4 and it is in amorphous state. The discharge behavior of Na/MnO2 cell is similar to that of Li/MnO2 cell, but with nominal voltage less by about 0.35 V, as expected. The specific capacity of amorphous MnO2 is 300 mAh g(-1) in both Na/MnO2 and Li/MnO2 cells. On heating the as prepared amorphous MnO2 at temperature range 300-800 degrees C, it converts to crystalline ct-MnO2. The capacity of crystalline MnO2 is significantly less than the amorphous MnO2. The results suggest that Na/MnO2 is a viable, economical alternate to Li/MnO2 primary cell. (C) The Author(s) 2015. Published by ECS. All rights reserved.

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Using polydispersity index as an additional order parameter we investigate freezing/melting transition of Lennard-Jones polydisperse systems (with Gaussian polydispersity in size), especially to gain insight into the origin of the terminal polydispersity. The average inherent structure (IS) energy and root mean square displacement (RMSD) of the solid before melting both exhibit quite similar polydispersity dependence including a discontinuity at solid-liquid transition point. Lindemann ratio, obtained from RMSD, is found to be dependent on temperature. At a given number density, there exists a value of polydispersity index (delta (P)) above which no crystalline solid is stable. This transition value of polydispersity(termed as transition polydispersity, delta (P) ) is found to depend strongly on temperature, a feature missed in hard sphere model systems. Additionally, for a particular temperature when number density is increased, delta (P) shifts to higher values. This temperature and number density dependent value of delta (P) saturates surprisingly to a value which is found to be nearly the same for all temperatures, known as terminal polydispersity (delta (TP)). This value (delta (TP) similar to 0.11) is in excellent agreement with the experimental value of 0.12, but differs from hard sphere transition where this limiting value is only 0.048. Terminal polydispersity (delta (TP)) thus has a quasiuniversal character. Interestingly, the bifurcation diagram obtained from non-linear integral equation theories of freezing seems to provide an explanation of the existence of unique terminal polydispersity in polydisperse systems. Global bond orientational order parameter is calculated to obtain further insights into mechanism for melting.

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The phase diagram of the dodecyl dimethyl ammonium hydroxyl propyl sulfonate(DDAHPS)/1-pentanol(C5H11OH)/water ternary system has been established. It contains two isotropic monophase regions (L-1 and L-2) and a liquid crystalline region (L.C.). The isotropic phase regions have been investigated by means of Raman spectroscopy and conductivity.

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Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

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It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples.

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Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ~ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).

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Highly crystalline organic superlattice has great potential for providing innovative function in organic devices. With studies of the structure and fundamental electronical properties, we have demonstrated the phathalocynine organic superlattice, which is a structure composed of periodically alternating crystalline layers of H2Pc and F16CuPc. A periodical crystal structure and electronic structure appear in this organic superlattice system. High density of mobile electrons and holes distribute periodically in F16CuPc and H2Pc layers, respectively, leading to a significant change in intrinsic properties of organic semiconductors.

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Rhythmic growth of ring-banded spherulites in blends of liquid crystalline methoxy-poly(aryl ether ketone) (M-PAEK) and poly(aryl ether ether ketone) (PEEK) has been investigated by means of differential scanning calorimetry (DSC), polarized light microscopy (PLM), and scanning electron microscopy (SEM) techniques. The measurements reveal that the formation of the rhythmically grown ring-banded spherulites in the M-PAEK/PEEK blends is strongly dependent on the blend composition. In the M.-PAEK-rich blends, upon cooling, an unusual ring-banded spherulite is formed, which is ascribed to structural discontinuity caused by a rhythmic radial growth. For the 50:50 M-PAEK/PEEK blend, ring-banded spherulites and individual PEEK spherulites coexist in the system. In the blends with PEEK as the predominant component, M-PAEK is rejected into the boundary of PEEK spherulites. The cooling rate and crystallization temperature have great effect on the phase behavior, especially the ring-banded spherulite formation in the blends. In addition, the effects of M-PAEK phase transition rate and phase separation rate on banded spherulite formation is discussed.

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The lightest density of Mg has stimulated renewed interest in Mg based alloys for applications in the automotive, aerospace and communications industries. However, Mg in the pure form has relatively low strength, limited ductility and is susceptible to corrosion. Great efforts have been made to improve the mechanical properties of Mg alloys. Alloying Mg with other elements is one of the most important methods. An important class of Mg alloys is the Mg-Zn-RE system (RE = rare earth elements). In recent few decades, a series of new Mg-Zn-RE system alloys have been obtained, and detailed the structure and mechanical properties of the alloys. In this paper, the structure and mechanical properties of the Mg-Zn-RE alloys have been summarized. It showed that these alloys have high strength and they are prospected to be widely used in the future.

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The crystalline syndiotatic 1,2-polybutadiene was synthesized with a catalyst consisting of iron acetylacetonate (Fe(acac)(3))-triisobutylaluminum (Al(i-Bu)(3))-diethyl phosphite (DEP), and the effects of crystal growth conditions on morphology of thin films of the polymer were investigated by transmission electron microscopy (TEM) and electron diffraction (ED) techniques. The polymer with melting point 179 degreesC was found to have 89.3% 1,2-content and 86.5% syndiotacticity by C-13 NMR measurement. The results of electron microscopic studies indicate that the solution-cast thin films of the syndiotatic 1,2-polybutadiene consist of lath-like lamellae with the c-axis perpendicular to the film plane, while a- and b-axes are in the film plane. The morphology of isothermally crystallized thin films of the polymer is temperature dependent. At lower crystallization temperatures (130 degreesC), a spherulitic structure consisting of flat-on lamellae is formed. With an increase in the crystallization temperature (e.g., at 140 degreesC), the spherulites and single faceted crystals coexist. At higher crystallization temperatures (150 degreesC), single crystals with a hexagonal prismatic shape are produced.

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Crystallization and phase behavior in solution-cast thin films of crystalline syndiotactic 1,2-polybutadiene (s-1,2-PB) and isotactic polypropylene (i-PP) blends have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) techniques. Thin films of pure s-1,2-PB consist of parallel lamellae with the c-axis perpendicular to the film plane and the lateral scale in micrometer size, while those of i-PP are composed of cross-hatched and single-crystal-like lamellae. For the blends, TEM and AFM observations show that with addition of i-PP, the s-1,2-PB long lamellae become bended and i-PP itself tends to form dispersed convex regions oil a continuous s-1,2-PB phase even when i-PP is the predominant component, which indicates a strong phase separation between the two polymers during film formation. FESEM micrographs of both lower and upper surfaces of the films reveal that the s-1,2-PB lamellae pass through i-PPconvex regions from the bottom, i.e. the dispersed i-PP regions lie on the continuous s-1,2-PB phase. The structural development is attributed to an interplay of crystallization and phase separation of the blends in the film forming process.

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poly(epsilon-caprolactone) (PCL) and silica (SiO2) organic-inorganic hybrid materials have been synthesized by sol-gel approach and the crystalline behavior of PCL in the silica networks has been investigated by differential scanning calorimetry (DSC) and wide angle X-ray diffraction (WAXD). The degree of PCL crystallinity in the PCL/SiO2 hybrid networks reduces with the increase of SiO2 content. PCL is in an amorphous state when the concentration of PCL is lower than 40wt% in the hybrid materials. The melting points of PCL in the networks are lower than that of pure PCL,but they almost have a same value. WAXD results show that when the PCL weight percentage is higher than 40wt% in the hybrid samples,part of PCL can crysatllize and the PCL crystallites are almost in a same size. That means the crystalline movement of PCL molecular chains is strictly confined by the porous gel. The crystalline PCL in the hybrid samples is relatively free from the composition of the materials, because the crystallization temperature and melting point of PCL of the samples are almost equal,and the crystalline PCL of different samples has the same crystalline structure and the same crystallite sizes L-110 and L-200, that means the crystalline part of PCL in the hybrid samples is unperturbed and the porous silica gel gives enough space for PCL to crystallize into the same crystalline structure and the same size crystallites.

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Oxidized amorphous Si3N4 and SiO2 powders were pressed alone or as a mixture under high pressure (1.0-5.0 GPa) at high temperatures (800-1700 degreesC). Formation of crystalline silicon oxynitride (Si(2ON)2) was observed from amorphous silicon nitride (Si3N4) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400 degreesC, The Si2ON2 coexisted with beta -Si3N4 with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si2ON2. Pressing a mixture of amorphous Si3N4 of lower oxygen (1.5 wt%) and SiO2 under 1.0-5.0 GPa between 1000 degrees and 1350 degreesC did not give Si2ON2 phase, but yielded a mixture of alpha,beta -Si3N4, quartz, and coesite (a high-pressure form of SiO2). The formation of Si2ON2, from oxidized amorphous Si3N4 seemed to be assisted by formation of a Si-O-N melt in the system that was enhanced under the high pressure.