Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Multiple Frequency Solidly Mounted BAW Filters

This paper reports the simultaneous fabrication of Receive and Transmit Bulk Acoustic Wave filters for the WCDMA standard on the same die. Both filters are based on Solidly Mounted Resonators using a common Bragg mirror, but with each having a specific piezoelectric film thickness. Electrical measurements reveal that the process steps required to provide the two different piezoelectric film thicknesses on the same die does not impact the electrical performances of resonators and filters and that this approach could thus be generalised to more than two filters.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs

The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature.

Modelado de materiales piezoeléctricos para aplicaciones de autoalimentación en entornos viales

Este proyecto continua con el estudio iniciado en los proyectos: Alimentación “Energy Harvesting” basada en fuentes piezoeléctricas, Alimentación autónoma: aplicación a fuente piezoeléctrica y Banco de pruebas para sistemas autoalimentados en aplicaciones viales, que se realizaron anteriormente. Este estudio se basa en la búsqueda de soluciones de alimentación Energy Harvesting centrados en fuentes piezoeléctricas. El objetivo de este estudio es conocer las posibilidades que pueden ofrecer los materiales piezoeléctricos para alimentación autónoma cuando son excitados por vehículos en diferentes circunstancias y entornos viales. Para la realización de este estudio se han utilizado señales provenientes del banco de ensayos, así como señales obtenidas de una instalación construida en un vial del Campus. Para poder realizar el estudio de los diversos materiales piezoeléctricos utilizados en este proyecto, se necesitan conocer las características de los modelos eléctricos. Para obtener estas características se ha diseñado un programa basado en LabView, este programa además puede modificar la señal para que simule las diversas circunstancias a las que pueden estar sometidos los diferentes materiales piezoeléctricos. En este estudio se ha tenido en cuenta la distancia de seguridad entre vehículos para diferentes velocidades y la posibilidad de poder amplificar la excitación que pueden recibir los diversos materiales. Utilizando el programa PSpice OrCAD® se realizan los diferentes modelos con el objetivo de observar el comportamiento de los materiales bajo diversas circunstancias. También se han utilizado varias topologías rectificadoras diferentes para poder comprobar en que situación se puede obtener la máxima tensión acumulada posible. Además también se ha evaluado la máxima potencia que puede entregar cada material en cada situación. Por ultimo se han realizado varias pruebas prácticas con el banco de ensayos para comprobar la acumulación energética real que se puede obtener de los materiales instalados en él. También se ha realizado el estudio de una aplicación práctica que sea capaz de alimentar pequeños circuitos o sensores de poco consumo. Abstract This Project goes on with the study started in the projects Feeding “Energy Harvesting” based on piezoelectric sources, independent feeding: application to piezoelectric source and testing bench to self fed systems in roads applications that were previously done. This study is based on the search of feeding solutions Energy Harvesting focus on piezoelectric sources. The aim of this study is know the different piezoelectric materials possibilities that can offer to independent feeding when different circumstances and road surroundings are excited by vehicles in. To develop this study several signals of the testing bench have been used and also signals get from an installation constructed on a Campus road. As far as the study of the different piezoelectric materials used in this project is concerned we should know the electrical models features. In order to obtain these characteristics a program based on LabView was designed, this program can modify the signal so that it simulates the diverse circumstances to which they can be put under the different piezoelectric materials. In this study I have bearded in mind the safe distance between vehicles for different speeds and the possibility of being able to amplify the excitation that can receive the diverse materials. Using the program PSpice OrCAD® the different models with the objective are made to observe the behaviour of the materials under diverse circumstances. Also several different rectifying topologies have been used to be able to verify the maximum overvoltage accumulated. In addition I have assessed the maximum power that can give each material in each situation. Last but not least different practical proofs with the testing bench have been done to check the actual energy accumulation that can be obtained from the materials installed on it. Also the study of a practical application has been made that is able to feed small circuits or low consumption sensor.

Influence of Crystal Quality on the Excitation and Propagation of Surface and Bulk Acoustic Waves in Polycrystalline AlN Films

We investigate the excitation and propagation of acoustic waves in polycrystalline aluminum nitride films along the directions parallel and normal to the c-axis. Longitudinal and transverse propagations are assessed through the frequency response of surface acoustic wave and bulk acoustic wave devices fabricated on films of different crystal qualities. The crystalline properties significantly affect the electromechanical coupling factors and acoustic properties of the piezoelectric layers. The presence of misoriented grains produces an overall decrease of the piezoelectric activity, degrading more severely the excitation and propagation of waves traveling transversally to the c-axis. It is suggested that the presence of such crystalline defects in c-axis-oriented films reduces the mechanical coherence between grains and hinders the transverse deformation of the film when the electric field is applied parallel to the surface.

Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.

Cinemómetro piezoeléctrico de alta exactitud (VUAE)

Se ha desarrollado un sistema electrónico computerizado, portátil y de bajo consumo, denominado Medidor de Velocidad de Vehículos por Ultrasonidos de Alta Exactitud, VUAE. La alta exactitud de la medida conseguida en el VUAE hace que pueda servir de medida de referencia de la velocidad de un vehículo circulando en carretera. Por tanto el VUAE puede usarse como medida de referencia que permita estimar el error de los cinemómetros comerciales. El VUAE está compuesto por n (n≥2) parejas de emisores y receptores piezoeléctricos de ultrasonidos, denominados E-Rult. Los emisores de las n parejas E-Rult generan n barreras de ultrasonidos, y los receptores piezoeléctricos captan la señal de los ecos cuando el vehículo atraviesa las barreras. Estos ecos se procesan digitalmente para conseguir señales representativas. Posteriormente, utilizando la técnica de la correlación cruzada de señales, se ha podido estimar con alta exactitud la diferencia de tiempos entre los ecos captados en cada barrera. Con los tiempos entre ecos y con la distancia entre cada una de las n barreras de ultrasonidos se puede realizar una estimación de la velocidad del vehículo con alta exactitud. El VUAE se ha contrastado con un sistema de velocidad de referencia, basado en cables piezoeléctricos. ABSTRACT We have developed a portable computerized and low consumption, our system is called High Accuracy Piezoelectric Kinemometer measurement, herein VUAE. By the high accuracy obtained by VUAE it make able to use the VUAE to obtain references measurements of system for measuring Speeds in Vehicles. Therefore VUAE could be used how reference equipment to estimate the error of installed kinemometers. The VUAE was created with n (n≥2) pairs of ultrasonic transmitter-receiver, herein E-Rult. The transmitters used in the n couples E-Rult generate n ultrasonic barriers and receivers receive the echoes when the vehicle crosses the barriers. Digital processing of the echoes signals let us to obtain acceptable signals. Later, by mean of cross correlation technics is possible make a highly exact estimation of speed of the vehicle. The log of the moments of interception and the distance between each of the n ultrasounds allows for a highly exact estimation of speed of the vehicle. VUAE speed measurements were compared to a speed reference system based on piezoelectric cables.

Structural health monitoring network system with wireless communications inside closed aerospace structures

Structural Health Monitoring (SHM) requires integrated "all in one" electronic devices capable of performing analysis of structural integrity and on-board damage detection in aircraft?s structures. PAMELA III (Phased Array Monitoring for Enhanced Life Assessment, version III) SHM embedded system is an example of this device type. This equipment is capable of generating excitation signals to be applied to an array of integrated piezoelectric Phased Array (PhA) transducers stuck to aircraft structure, acquiring the response signals, and carrying out the advanced signal processing to obtain SHM maps. PAMELA III is connected with a host computer in order to receive the configuration parameters and sending the obtained SHM maps, alarms and so on. This host can communicate with PAMELA III through an Ethernet interface. To avoid the use of wires where necessary, it is possible to add Wi-Fi capabilities to PAMELA III, connecting a Wi-Fi node working as a bridge, and to establish a wireless communication between PAMELA III and the host. However, in a real aircraft scenario, several PAMELA III devices must work together inside closed structures. In this situation, it is not possible for all PAMELA III devices to establish a wireless communication directly with the host, due to the signal attenuation caused by the different obstacles of the aircraft structure. To provide communication among all PAMELA III devices and the host, a wireless mesh network (WMN) system has been implemented inside a closed aluminum wingbox. In a WMN, as long as a node is connected to at least one other node, it will have full connectivity to the entire network because each mesh node forwards packets to other nodes in the network as required. Mesh protocols automatically determine the best route through the network and can dynamically reconfigure the network if a link drops out. The advantages and disadvantages on the use of a wireless mesh network system inside closed aerospace structures are discussed.

Thermal and mechanical effects of different excitation modes based on low frequency laser modulation in optical hyperthermia

The low frequency modulation of the laser source (menor que30KHz) allows the generation of a pulsed signal that intermittently excites the gold nanorods. The temperature curves obtained for different frequencies and duty cycles of modulation but with equal average power and identical laser parameters, show that the thermal behavior in continuous wave and modulation modes is the same. However, the cell death experiments suggest that the percentage of death is higher in the cases of modulation. This observation allows us to conclude that there are other effects in addition to temperature that contribute to the cellular death. The mechanical effects like sound or pressure waves are expected to be generated from thermal expansion of gold nanorods. In order to study the behavior and magnitude of these processes we have developed a measure device based on ultrasound piezoelectric receivers (25KHz) and a lock-in amplifier that is able to detect the sound waves generated in samples of gold nanorods during laser irradiation providing us a voltage result proportional to the pressure signal. The first results show that the pressure measurements are directly proportional to the concentration of gold nanorods and the laser power, therefore, our present work is focused on determine the real influence of these effects in the cell death process.

Caracterización e instrumentación de sensores de ultrasonidos

El propósito de este proyecto de �fin de carrera es la caracterización e instrumentación de un sensor de ultrasonidos modelado por el tutor de este proyecto: Don César Briso Rodrí��guez. Una vez realizado el modelado de dicho sensor, simulando tanto sus caracter�í�sticas f�í�sicas, como sus caracterí��sticas eléctricas, se procede a la intrumentación y uso del mismo. La parte de intrumentaci�ón incluye tanto la electrónica que ser��á necesaria para la excitación del piezoeléctrico, en el modo de emisi�ón, como para la recepción de los pulsos el�éctricos generados por el sensor, como respuesta a los ecos recibidos, y su adecuación a niveles de señal correctos para la adquisici�ón, en el modo de escucha. Tras la adecuaci�ón de las señales para la adquisici�ón, éstas ser�án digitalizadas, tratadas y representadas por pantalla en un PC, a trav�es de una tarjeta de adquisición de datos por puerto USB encargada del muestreo de las señales de respuesta ya tratadas y su posterior enví��o al software de control y representaci�ón desarrollado en este proyecto. El entorno de usuario, el software de control de la tarjeta de adquisición y el software de tratamiento y representaci�ón se ha desarrollado con Visual Basic 2008 y las utilidades gr�áfi�cas de las librer��ías OpenGL. ABSTRACT The purpose of this project is to limit the characterization and implementation of an ultrasonic sensor modeled by Mr. C�ésar Briso Rodr��íguez. Once the sensor modeling by simulating physical characteristics and electrical characteristics, we proceed to the instrumentation and use. This section includes electronic instrumentation that would be necessary for the piezoelectric excitation in the emission mode and for receiving electrical pulses generated by the sensor in response to the received echoes, and matching signal levels right to acquire, in the reception mode. After the adjustment of the signals for the acquisition, these signals will be digitalized, processed and represented on the screen on a PC through a data acquisition card by USB port. Acquisition card is able to sample the response signals and transmit the samples to representation and control software developed in this project. The user interface, the acquisition card control software and processing and representation software has been developed with Visual Basic 2008 and OpenGL graphical libraries.

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.

Super-high-frequency SAW resonators on AlN/Diamond

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection.

Efecto del Cross-talk en la respuesta de un Transductor Ultrasónico tipo PZT

El presente trabajo de tesis investiga el efecto del fenómeno conocido como “Cross-talk” generado por el modo lateral de vibración, en la respuesta de un transductor ultrasónico formado por un arreglo de elementos piezoeléctricos tipo PZT (Zircanato Titanato de Plomo), la investigación se lleva a cabo desde el punto de vista de la naturaleza física de este efecto, así como de los parámetros asociados al mismo, así como un análisis del efecto del “Cross-talk” en la respuesta del transductor, formado por arreglos de elementos piezoeléctricos. Diversas investigaciones han abordado el fenómeno del “Cross-talk” y de sus efectos en la respuesta de los transductores, estos se han enfocado principalmente al modo espesor (thickness) de vibración. Sin embargo no ha habido un estudio a fondo para el estudio de este fenómeno en el modo lateral de vibración tema de interés de este trabajo de tesis. Este trabajo incluye simulaciones del fenómeno del “Cross-talk” mediante el método de los elementos finitos (MEF), así como la construcción de un transductor tipo matricial (arrray) de 2x3 elementos, en el que fueron realizadas las mediciones físicas del fenómeno. El trabajo abarca un estudio comparativo entre las simulaciones y las mediciones realizadas en el transductor, considerando que las cerámicas del transductor están montadas sobre diferentes materiales (backing) en donde la propagación de la energía emitida por las cerámicas piezoeléctricas provoca un mayor o menor grado de “Cross-talk” dependiendo de la velocidad en que se propaga dicha energía. Esta investigación también llevó a cabo el estudio del efecto del “Cross-talk” en el patrón de radiación que emite el arreglo de elementos piezoeléctricos, siendo este patrón de radiación un factor importante en la respuesta del transductor, motivo por el cual se realizó un análisis de cómo se ve afectado este patrón bajo la influencia del fenómeno del “Cross-talk”. Como ya se mencionó debido a la falta de un estudio a profundidad del fenómeno del “Cross-talk” en el modo lateral, la contribución del presente trabajo es importante ya que se enfoca al modo lateral de vibración de los elementos piezoeléctricos del arreglo. En particular se desarrollo una ecuación que permite cuantificar el fenómeno del “Cross-talk” y visualizar sus efectos en el arreglo. Derivando de este estudio se concluye que el fenómeno del “Cross-talk” generado por el modo lateral de vibración tiene un efecto significativo en la respuesta de los diferentes transductores matriciales considerados. ABSTRACT This thesis investigates the effect of the phenomenon known as crosstalk from the point of view of its physical nature and the elements that lead to the formation of this phenomenon to an analysis of how it may affect the performance of the ultrasonic transducer. This phenomenon occurs primarily in matrix arrays and this phenomenon is magnified by certain factors causing serious problems in the performance of a transducer. Researchers have addressed the phenomenon of crosstalk and their effects on the response of these transducers. They have mainly focused in the thickness vibration mode, and there has been no comprehensive study of this phenomenon in the lateral vibration mode, issue of interest of this thesis. This work includes simulations of the crosstalk phenomenon using the finite element method (FEM), and the construction of a matrix type transducer (array) of 2x3 elements, in which physical measurements were made. The work includes a comparative study between simulations and measurements in the transducer, whereas the ceramic transducer are mounted on different materials (backing) where the spread of the energy emitted by the piezoelectric ceramic causes a greater or lesser degree of crosstalk depending on the speed at which this energy spreads. This research also carried out the study of the effect of the crosstalk in the radiation pattern emitted by the piezoelectric array. The radiation pattern is an important factor in the response of the transducer that is why we conducted an analysis of how this pattern is affected under the influence of the crosstalk phenomenon. As mentioned before because of the lack of an in-depth study of the crosstalk phenomenon in the lateral vibration mode, the contribution of this work is important because it focuses in this vibration mode of the piezoelectric elements in the array. In particular, an equation was developed to quantify the crosstalk phenomenon and to see its effects in the array. Deriving from this study it is possible to conclude that the crosstalk phenomenon generated by the lateral vibration mode has a significant effect on the response of the different matrix transducers considered in this work.

A generalized method for flat plates impact detection and location

In the last years, many analyses from acoustic signal processing have been used for different applications. In most cases, these sensor systems are based on the determination of times of flight for signals from every transducer. This paper presents a flat plate generalization method for impact detection and location over linear links or bars-based structures. The use of three piezoelectric sensors allow to achieve the position and impact time while the use of additional sensors lets cover a larger area of detection and avoid wrong timing difference measurements. An experimental setup and some experimental results are briefly presented.