999 resultados para peer reactions


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提出并实现了一种建立在Peer-to-Peer 搜索策略上的自组织、自适应、高效和可靠的文件系统DISPFS(Double ID Space basedPeer-to-peer File System)。它在双层ID 空间中构造虚拟存储节点,不仅有效地取得了文件系统内的负载均衡、提高系统利用率,而且保证了动态环境中文件的可靠、快速获取。试验数据表明,DISPFS 在系统接近满负荷运行和文件插入/删除操作频繁的双重压力下依然保持优良的性能。

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Transient flow patterns and bubble slug lengths were investigated with oxygen gas (O-2) bubbles produced by catalytic chemical reactions using a high speed camera bonded with a microscope. The microreactor consists of an inlet liquid plenum, nine parallel rectangular microchannels followed by a micronozzle, using the MEMS fabrication technique. The etched surface was deposited by the thin platinum film, which is acted as the catalyst. Experiments were performed with the inlet mass concentration of the hydrogen peroxide from 50% to 90% and the pressure drop across the silicon chip from 2.5 to 20.0 kPa. The silicon chip is directly exposed in the environment thus the heat released via the catalytic chemical reactions is dissipated into the environment and the experiment was performed at the room temperature level. It is found that the two-phase flow with the catalytic chemical reactions display the cyclic behavior. A full cycle consists of a short fresh liquid refilling stage, a liquid decomposition stage followed by the bubble slug flow stage. At the beginning of the bubble slug flow stage, the liquid slug number reaches maximum, while at the end of the bubble slug flow stage the liquid slugs are quickly flushed out of the microchannels. Two or three large bubbles are observed in the inlet liquid plenum, affecting the two-phase distributions in microchannels. The bubble slug lengths, cycle periods as well as the mass flow rates are analyzed with different mass concentrations of hydrogen peroxide and pressure drops. The bubble slug length is helpful for the selection of the future microreactor length ensuring the complete hydrogen peroxide decomposition. Future studies on the temperature effect on the transient two-phase flow with chemical reactions are recommended.

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The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

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Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

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Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

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Within the framework of a dinuclear system (DNS) model, the evaporation-residue excitation functions and the quasi-fission mass yields in the 48Ca induced fusion reactions are investigated systematically and compared with available experimental data. Maximal production cross sections of superheavy nuclei based on stable actinide targets are obtained. Isotopic trends in the production of the superheavy elements Z = 110, 112–118 based on the actinide isotopic targets are analyzed systematically. Optimal evaporation channels and combinations as well as the corresponding excitation energies are proposed. The possible factors that influencing the isotopic dependence of the production cross sections are analyzed. The formation of the superheavy nuclei based on the isotopes U with different projectiles are also investigated and calculated.

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Within the concept of the dinuclear system (DNS), a dynamical model is proposed for describing the formation of superheavy nuclei in complete fusion reactions by incorporating the coupling of the relative motion to the nucleon transfer process. The capture of two heavy colliding nuclei, the formation of the compound nucleus and the de-excitation process are calculated by using an empirical coupled channel model, solving a set of microscopically derived master equations numerically and applying statistical theory, respectively.Fusion-fission reactions and evaporation residue excitation functions of synthesizing superheavy nuclei (SHN)are investigated systematically and compared them with available experimental data. The possible factors that affecting the production cross sections of SHN are discussed in this workshop.