Structure and electrical properties of sputtered lithium cobaltite thin films

LixCoOy films with x < 1 and y > 2 have been prepared by radio-frequency (rf) sputtering from high temperature (HT) LiCoO2 targets. Their structures have been examined with high resolution electron microscopy. Conductivities have been studied between 77 and 400 K. The electrochemical behaviour of film electrodes have been investigated with Li/LiClO4-PC/LixCoOy cells. The annealed films consist of nanocrystalline domains with amorphous boundaries. Electrical conductivities appear to arise from variable-range hopping (VRH) of holes. The films form good electrodes with operating potentials between 2.7 and 3.8 V. The observations have been discussed on the basis of a tentative and heuristic molecular orbital based energy band diagram. (C) 2002 Published by Elsevier Science Ltd.

Reduction of oxygen impurity at GaN/beta-Si(3)N(4)/Si interface via SiO(2) to Ga(2)O conversion by exposing of Si surface under Ga flux

The removal of native oxide from Si (1 1 1) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles. Two different oxide removal methods, performed under ultrahigh-vacuum (UHV) conditions, were carried out and compared. The first cleaning method is thermal desorption of oxide at 900 degrees C. The second method is the deposition of metallic gallium followed by redesorption. A significant decrease in oxygen was achieved by thermal desorption at 900 degrees C under UHV conditions. By applying a subsequent Ga deposition/redesorption, a further reduction in oxygen could be achieved. We examine the merits of an alternative oxide desorption method via conversion of the stable SiO(2) surface oxide into a volatile Ca(2)O oxide by a supply of Ga metals. Furthermore, ultra thin films of pure silicon nitride buffer layer were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma followed by GaN growth. The SIMS depth profile shows that the oxygen impurity can be reduced at GaN/beta-Si(3)N(4)/Si interfaces by applying a subsequent Ga deposition/redesorption. (C) 2011 Elsevier B.V. All rights reserved.

Capturing higher modes of vibration of micromachined resonators

MEMS resonators have potential applications in the areas of RF-MEMS, clock oscillators, ultrasound transducers, etc. The important characteristics of a resonator are its resonant frequency and Q-factor (a measure of damping). Usually large damping in macro structures makes it difficult to excite and measure their higher modes. In contrast, MEMS resonators seem amenable to excitation in higher modes. In this paper, 28 modes of vibration of an electrothermal actuator are experimentally captured–perhaps the highest number of modes experimentally captured so far. We verify these modes with FEM simulations and report that all the measured frequencies are within 5% of theoretically predicted values.

Optimal Power and Noise for Analog and Digital Sections of a Low Power Radio Receiver

We determine the optimal allocation of power between the analog and digital sections of an RF receiver while meeting the BER constraint. Unlike conventional RF receiver designs, we treat the SNR at the output of the analog front end (SNRAD) as a design parameter rather than a specification to arrive at this optimal allocation. We first determine the relationship of the SNRAD to the resolution and operating frequency of the digital section. We then use power models for the analog and digital sections to solve the power minimization problem. As an example, we consider a 802.15.4 compliant low-IF receiver operating at 2.4 GHz in 0.13 μm technology with 1.2 V power supply. We find that the overall receiver power is minimized by having the analog front end provide an SNR of 1.3dB and the ADC and the digital section operate at 1-bit resolution with 18MHz sampling frequency while achieving a power dissipation of 7mW.

Antenna Selection for Next Generation IEEE 802.16 Mobile Stations

The IEEE 802.16/WiMAX standard has fully embraced multi-antenna technology and can, thus, deliver robust and high transmission rates and higher system capacity. Nevertheless,due to its inherent form-factor constraints and cost concerns, a WiMAX mobile station (MS) should preferably contain fewer radio frequency (RF) chains than antenna elements.This is because RF chains are often substantially more expensive than antenna elements. Thus, antenna selection, wherein a subset of antennas is dynamically selected to connect to the limited RF chains for transceiving, is a highly appealing performance enhancement technique for multi-antenna WiMAX terminals.In this paper, a novel antenna selection protocol tailored for next-generation IEEE 802.16 mobile stations is proposed. As demonstrated by the extensive OPNET simulations, the proposed protocol delivers a significant performance improvement over conventional 802.16 terminals that lack the antenna selection capability. Moreover, the new protocol leverages the existing signaling methods defined in 802.16, thereby incurring a negligible signaling overhead and requiring only diminutive modifications of the standard. To the best of our knowledge, this paper represents the first effort to support antenna selection capability in IEEE 802.16 mobile stations.

Antenna Selection Training in MIMO-OFDM/OFDMA Cellular Systems

Antenna selection allows multiple-antenna systems to achieve most of their promised diversity gain, while keeping the number of RF chains and, thus, cost/complexity low. In this paper we investigate antenna selection for fourth-generation OFDMA- based cellular communications systems, in particular, 3GPP LTE (long-term evolution) systems. We propose a training method for antenna selection that is especially suitable for OFDMA. By means of simulation, we evaluate the SNR-gain that can be achieved with our design. We find that the performance depends on the bandwidth assigned to each user, the scheduling method (round-robin or frequency-domain scheduling), and the Doppler spread. Furthermore, the signal-to-noise ratio of the training sequence plays a critical role. Typical SNR gains are around 2 dB, with larger values obtainable in certain circumstances.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.

Analog/RF Built-in-Self-Test Subsystem for a Mobile Broadcast Video Receiver in 65-nm CMOS

A built-in-self-test (BIST) subsystem embedded in a 65-nm mobile broadcast video receiver is described. The subsystem is designed to perform analog and RF measurements at multiple internal nodes of the receiver. It uses a distributed network of CMOS sensors and a low bandwidth, 12-bit A/D converter to perform the measurements with a serial bus interface enabling a digital transfer of measured data to automatic test equipment (ATE). A perturbation/correlation based BIST method is described, which makes pass/fail determination on parts, resulting in significant test time and cost reduction.

Reliability based design optimization of gravity retaining walls

In this paper the use of probability theory in reliability based optimum design of reinforced gravity retaining wall is described. The formulation for computing system reliability index is presented. A parametric study is conducted using advanced first order second moment method (AFOSM) developed by Hasofer-Lind and Rackwitz-Fiessler (HL-RF) to asses the effect of uncertainties in design parameters on the probability of failure of reinforced gravity retaining wall. Totally 8 modes of failure are considered, viz overturning, sliding, eccentricity, bearing capacity failure, shear and moment failure in the toe slab and heel slab. The analysis is performed by treating back fill soil properties, foundation soil properties, geometric properties of wall, reinforcement properties and concrete properties as random variables. These results are used to investigate optimum wall proportions for different coefficients of variation of φ (5% and 10%) and targeting system reliability index (βt) in the range of 3 – 3.2.

The effect of electrochemical lithiation on physicochemical properties of RF-sputtered Sn thin films

Thin films of Sn were deposited on Pt/Si substrates by sputtering technique and subjected to electrochemical lithiation studies. Electrochemical lithiation of Sn resulted in the formation of Sn-Li alloys of different compositions. Charging of Sn-coated Pt/Si electrodes was terminated at different potentials and the electrodes were examined for physicochemical properties. The scanning electron microscopy and atomic force microscopy images suggested that the Sn films expanded on lithiation. Roughness of the film increased with an increase in the quantity of Li present in Sn-Li alloy. Electrochemical impedance data suggested that the kinetics of charging became sluggish with an increase in the quantity of Li in Sn-Li alloy.