Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.

Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic precursors

In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Cu2ZnSnS4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of secondary phases like ZnS, CuxSnSx+1, SnxSy, Cu2−xS and MoS2. X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of profiling the different phases present in multi-phase CZTS thin films. This work describes in a concise form the methods used to grow chalcogenide compounds, such as, CZTS, CuxSnSx+1, SnxSy and cubic ZnS based on the sulphurization of stacked metallic precursors. The results of the films’ characterization by XRD, electron backscatter diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated. The results of the Raman analysis of the phases formed in this growth method and the advantage of using this technique in identifying them are presented. Using different excitation wavelengths it is also analysed the CZTS film in depth showing that this technique can be used as non destructive methods to detect secondary phases.

Control of a power supply with cycling current using different controllers

Fast Field Cycling (FFC) Nuclear Magnetic Resonance (NMR) relaxometers require controlled current sources in order to get accurate flux density with respect to its magnet. The main elements of the proposed solution are a power semiconductor, a DC voltage source and the magnet. The power semiconductor is commanded in order to get a linear control of the flux density. To implement the flux density control, a Hall Effect sensor is used. Furthermore, the dynamic behavior of the current source is analyzed and compared when using a PI controller and a PD2I controller.

Produção e caracterização de silício policristalino e sua aplicação a TFTS

Dissertação para obtenção do Grau de Doutor em Engenharia dos Materiais, especialidade Microelectrónica e Optoelectrónica, pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia

Control of a power supply with cycling current using different controllers

Fast Field Cycling (FFC) Nuclear Magnetic Resonance (NMR) relaxometers require controlled current sources in order to get accurate flux density with respect to its magnet. The main elements of the proposed solution are a power semiconductor, a DC voltage source and the magnet. The power semiconductor is commanded in order to get a linear control of the flux density. To implement the flux density control, a Hall Effect sensor is used. Furthermore, the dynamic behavior of the current source is analyzed and compared when using a PI controller and a PD2I controller.

Solid-State bipolar Marx modulator modeling

A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-mu s output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Light-activated amplification in SiC Tandem devices: A capacitive active filter model

Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimentally and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing capacitance to control the power delivered to the load.

Marx-Type solid-state bipolar modulator topologies: Performance comparison

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 mu s pulse width and 5 mu s relaxation time into resistive, capacitive, and inductive loads.

High-performance flexible hybrid field-effect transistors based on cellulose fiber paper

IEEE Electron Device Letters, VOL. 29, NO. 9,

Síntese de um novo polímero conjugado e reticulável e sua aplicação em células fotovoltaicas

Trabalho Final de Mestrado para obtenção do Grau de Mestre em Engenharia Química e Biológica

A Lei de ZIPF ou Regra 80/20 da Internet

As Leis de Potência, LP, (Power Laws, em inglês), Leis de Pareto ou Leis de Zipf são distribuições estatísticas, com inúmeras aplicações práticas, em sistemas naturais e artificiais. Alguns exemplos são a variação dos rendimentos pessoais ou de empresas, a ocorrência de palavras em textos, as repetições de sons ou conjuntos de sons em composições musicais, o número de vítimas em guerras ou outros cataclismos, a magnitude de tremores de terra, o número de vendas de livros ou CD’s na internet, o número de sítios mais acedidos na Internet, entre muitos outros. Vilfredo Pareto (1897-1906) afirma, no manual de economia política “Cours d’Economie Politique”, que grande parte da economia mundial segue uma determinada distribuição, em que 20% da população reúne 80% da riqueza total do país, estando, assim uma pequena fração da sociedade a controlar a maior fatia do dinheiro. Isto resume o comportamento de uma variável que segue uma distribuição de Pareto (ou Lei de Potência). Neste trabalho pretende-se estudar em pormenor a aplicação das leis de potência a fenómenos da internet, como sendo o número de sítios mais visitados, o número de links existentes em determinado sítio, a distribuição de nós numa rede da internet, o número livros vendidos e as vendas em leilões online. Os resultados obtidos permitem-nos concluir que todos os dados estudados são bem aproximados, numa escala logarítmica, por uma reta com declive negativo, seguindo, assim, uma distribuição de Pareto. O desenvolvimento e crescimento da Web, tem proporcionado um aumento do número dos utilizadores, conteúdos e dos sítios. Grande parte dos exemplos presentes neste trabalho serão alvo de novos estudos e de novas conclusões. O fato da internet ter um papel preponderante nas sociedades modernas, faz com que esteja em constante evolução e cada vez mais seja possível apresentar fenómenos na internet associados Lei de Potência.

Reconfigurable antenna for mobile terminal

Trabalho Final de Mestrado para obtenção do grau de Mestrado em Engenharia Electrónica e Telecomunicações

Synthesis of titanate nanofibers co-sensitized with ZnS and Bi2S3 nanocrystallites and their application on pollutants removal

The synthesis of nanocomposite materials combining titanate nanofibers (TNF) with nanocrystalline ZnS and Bi2S3 semiconductors is described in this work. The TNF were produced via hydrothermal synthesis and sensitized with the semiconductor nanoparticles, through a single-source precursor decomposition method. ZnS and Bi2S3 nanoparticles were successfully grown onto the TNF's surface and Bi2S3-ZnS/TNF nanocomposite materials with different layouts. The samples' photocatalytic performance was first evaluated through the production of the hydroxyl radical using terephthalic acid as probe molecule. All the tested samples show photocatalytic ability for the production of this oxidizing species. Afterwards, the samples were investigated for the removal of methylene blue. The nanocomposite materials with best adsorption ability were the ZnS/TNF and Bi2S3ZnS/TNF. The dye removal was systematically studied, and the most promising results were obtained considering a sequential combination of an adsorption-photocatalytic degradation process using the Bi2S3ZnS/TNF powder as a highly adsorbent and photocatalyst material. (C) 2015 Elsevier Ltd. All rights reserved.