Drought tolerance and light requirements of high and low sublittoral species of Mediterranean macroalgae of the genus Cystoseira C. Agardh (Fucales, Phaeophyceae)

Article sobre la tolerància a la sequera i les necessitats de llum d'espècies de l'alt i baix sublitoral de macroalgues de la Mediterrània del gènere Cystoseira C. Agardh (Fucales, Phaeophyceae)

Pectina extraída de casca de pequi e aplicação em geleia light de manga

Dentre os frutos do Cerrado, destaca-se o pequi (Caryocar brasiliense Camb.), que é constituído por aproximadamente 80% de casca, que é desprezada; no entanto, apresenta potencial de utilização em várias aplicações. O objetivo deste trabalho foi avaliar a influência das variáveis concentração de ácido cítrico, temperatura e tempo de extração sobre o rendimento e o grau de esterificação da pectina extraída da casca de pequi e compará-la com a pectina cítrica comercial aplicada na formulação de geleia light. Obtiveram-se rendimentos de pectina entre 14,89 e 55,86 g.100g-1. A pectina obtida da casca de pequi caracterizou-se por apresentar baixo grau de esterificação (11,79-48,87%). A geleia light elaborada a partir da pectina da casca de pequi, extraída à temperatura de 84ºC por 92 minutos, na presença de 2% de ácido cítrico, obteve boa aceitação por parte dos provadores, alcançando escores médios acima de 7,0, diferindo da geleia produzida com pectina cítrica comercial apenas na aparência. Conclui-se que é viável utilizar a pectina da casca de pequi como ingrediente para formulação de geleia light de manga.

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors.

The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed.

Sensing the light environment in plants: photoreceptors and early signaling steps.

Plants must constantly adapt to a changing light environment in order to optimize energy conversion through the process of photosynthesis and to limit photodamage. In addition, plants use light cues for timing of key developmental transitions such as initiation of reproduction (transition to flowering). Plants are equipped with a battery of photoreceptors enabling them to sense a very broad light spectrum spanning from UV-B to far-red wavelength (280-750nm). In this review we briefly describe the different families of plant photosensory receptors and the mechanisms by which they transduce environmental information to influence numerous aspects of plant growth and development throughout their life cycle.

Flash Memory Cells Reliability Parameters Investigation

The present work is a part of the large project with purpose to qualify the Flash memory for automotive application using a standardized test and measurement flow. High memory reliability and data retention are the most critical parameters in this application. The current work covers the functional tests and data retention test. The purpose of the data retention test is to obtain the data retention parameters of the designed memory, i.e. the maximum time of information storage at specified conditions without critical charge leakage. For this purpose the charge leakage from the cells, which results in decrease of cells threshold voltage, was measured after a long-time hightemperature treatment at several temperatures. The amount of lost charge for each temperature was used to calculate the Arrhenius constant and activation energy for the discharge process. With this data, the discharge of the cells at different temperatures during long time can be predicted and the probability of data loss after years can be calculated. The memory chips, investigated in this work, were 0.035 μm CMOS Flash memory testchips, designed for further use in the Systems-on-Chips for automotive electronics.