Design of the IMP microbeam irradiation system for 100 MeV/u heavy ions

Abstract A state-of-the-art high energy heavy ion microbeam irradiation system is constructed at the Institute of Modern Physics of the Chinese Academy of Sciences. This microbeam system operates in both full current intensity mode and single ion mode. It delivers a predefined number of ions to preselected targets for research in biology and material science. The characteristic of this microbeam system is high energy and vertical irradiation. A quadrupole focusing system, in combination with a series of slits, has been designed to optimize the spatial resolution. A symmetrically achromatic system leads the beam downwards and serves simultaneously as an energy analyzer. A high gradient quadrupole triplet finally focuses a C6+ ion beam to 1 µm in the vacuum chamber within the energy range from 10 MeV/u to 100 MeV/u. In this paper, the IMP microbeam system is described in detail. A systematic investigation of the ion beam optics of this microbeam system is presented together with the associated aberrations. Comparison is made between the IMP microbeam system and the other existing systems to further discuss the performance of this microbeam. Then the optimized initial beam parameters are given for high resolution and high hitting efficiency. At last, the experiment platform is briefly introduced.

退火对He注入及随后~(208)Pb~(27+)辐照的Al_2O_3单晶PL谱的影响

利用高能离子研究了110keV的He+注入Al2O3单晶及随后230MeV的208Pb27+辐照并在不同温度条件下退火样品的光致发光的特性.从测试结果可以清楚地看到在375nm,390nm,413nm和450nm出现了强烈的发光峰.经过600K退火2h后测试结果显示,390nm发光峰增强剧烈,而别的发光峰显示不明显.在900K退火条件下,390nm的发光峰开始减弱相反在510nm出现了较强的发光峰,到1100K退火完毕后390nm的发光峰完全消失,而510nm的发光峰相对增强.从辐照样品的FTIR谱中看到,波数在460—510cm-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al2O3振动吸收峰消失,说明Al2O3振动模式被完全破坏.1000—1300cm-1之间为Al-O-Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动.退火后的FTIR谱变化不大.

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

低能He~(2+)与He原子碰撞转移电离出射电子能谱研究；Investigation on Electron Energy Spectra of Transfer Ionization Process in 70 and 100 keV He~(2+) Colliding on He

利用反应显微成像谱仪对70和100keV He2+与He原子碰撞转移电离(TI)过程中不同出射角度的电子能谱进行了测量,观测到出射电子能谱具有如下分布特征:出射电子速度分布介于0和入射离子速度vp之间;在不同出射角度电子能谱分布均有一极大值存在,随着出射角度的增大,能谱分布极大值逐渐减小;当电子出射角度等于45°时,多数电子集中在0eV附近。上述特征可由低能离子-原子碰撞"准分子"模型进行定性解释。在100keV He2+-He转移电离出射电子能谱中有靶电子被俘获至散射离子连续态(electron capture to continuum,简称ECC)电子的贡献,这可看做是动力学两步过程的作用。

10～100 MeV/u能区重离子反应机制的研究

把QMD模型扩展至10～100MeV/A能区，研究了该能区的重离子碰撞，并仔细检验了初始核在基态时传播的稳定性条件。~(40)Ca+~(40)Ca系统，在10 ～ 100MeV/A能区范围内研究了重离子反应机制随入射能量及碰撞参数的演化情况。我们发现，反应机制随能量的变化并不是突然的跃迁，而是一个连续的变化过程，不同的反应机制可以同时存在并发生竞争。在中心碰撞时，反应机制从全融合发展至非全融合，最后演化至碎裂机制。在周连碰撞时，随着入射能量的增加，根据我们提出的关于深部非弹碰撞和参加者－旁观者质量分布的判据，反应机制的可能变化趋势为从非完全融合或深部非弹碰撞到参加者－旁观者，最后发展至碎裂反应。我们知道，目前还没有人用QMD模型来研究过渡能区DIC机制的基本特征，我们还对~(20)(25Mev/A)+~(20)Ne系统周边碰撞时DIC机制的基本特征作了研究，计算结果表明：在中能区，DIC机制仍然存在，同时，在质量分布、旋转效应及能量损失方面具有低能时相同的特征，但与低能DIC的明显差别在于，出射的中间质量碎片已成为质量分布的主要部分，出射的轻粒子数目也相对增多。当碰撞参数小于7fm时，这里存在着不同反应机制的共存及竞争。根据质量分布随时间的演化情况，我们发现，中间质量碎片主要是由动力学过程中平均场涨落引起的动力学不稳定性造成的，统计衰变也贡献较小的一部分。由粗糙估计可以看出，25MeV/A时~(20)Ne+~(20)Ne系统的DIC机制仍然是一个趋向于平衡过程。相又于低能区，中能区的周边碰撞显得相当复杂