Use of automatic sand pourers for loose sand models

The consistency of laboratory sand model preparation for physical testing is a fundamental criterion in representing identical geotechnical issues at prototype scale. This objective led to the development of robotic apparatus to eliminate the non-uniformity in manual pouring. Previous studies have shown consistent sand models with high relative density between 50 to 90% produced by the automatic moving-hopper sand pourer at the University of Cambridge, based primarily on a linear correlation to flow rate. However, in the case of loose samples, the influence of other parameters, particularly the drop height, becomes more apparent. In this paper, findings on the effect of flow rate and drop height are discussed in relation to the layer thickness and relative density of loose sand samples. Design charts are presented to illustrate their relationships. The effect of these factors on different sand types is also covered to extend the use of the equipment. © 2010 Taylor & Francis Group, London.

Tensile response of passivated films with climb-assisted dislocation glide

The tensile response of single crystal films passivated on two sides is analysed using climb enabled discrete dislocation plasticity. Plastic deformation is modelled through the motion of edge dislocations in an elastic solid with a lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation incorporated through a set of constitutive rules. The dislocation motion in the films is by glide-only or by climb-assisted glide whereas in the surface passivation layers dislocation motion occurs by glide-only and penalized by a friction stress. For realistic values of the friction stress, the size dependence of the flow strength of the oxidised films was mainly a geometrical effect resulting from the fact that the ratio of the oxide layer thickness to film thickness increases with decreasing film thickness. However, if the passivation layer was modelled as impenetrable, i.e. an infinite friction stress, the plastic hardening rate of the films increases with decreasing film thickness even for geometrically self-similar specimens. This size dependence is an intrinsic material size effect that occurs because the dislocation pile-up lengths become on the order of the film thickness. Counter-intuitively, the films have a higher flow strength when dislocation motion is driven by climb-assisted glide compared to the case when dislocation motion is glide-only. This occurs because dislocation climb breaks up the dislocation pile-ups that aid dislocations to penetrate the passivation layers. The results also show that the Bauschinger effect in passivated thin films is stronger when dislocation motion is climb-assisted compared to films wherein dislocation motion is by glide-only. © 2012 Elsevier Ltd.

Turbine blade tip heat transfer in low speed and high speed flows

In this paper, high and low speed tip flows are investigated for a high-pressure turbine blade. Previous experimental data are used to validate a CFD code, which is then used to study the tip heat transfer in high and low speed cascades. The results show that at engine representative Mach numbers the tip flow is predominantly transonic. Thus, compared to the low speed tip flow, the heat transfer is affected by reductions in both the heat transfer coefficient and the recovery temperature. The high Mach numbers in the tip region (M>1.5) lead to large local variations in recovery temperature. Significant changes in the heat transfer coefficient are also observed. These are due to changes in the structure of the tip flow at high speed. At high speeds, the pressure side corner separation bubble reattachment occurs through supersonic acceleration which halves the length of the bubble when the tip gap exit Mach number is increased from 0.1 to 1.0. In addition, shock/boundary-layer interactions within the tip gap lead to large changes in the tip boundary-layer thickness. These effects give rise to significant differences in the heat-transfer coefficient within the tip region compared to the low-speed tip flow. Compared to the low speed tip flow, the high speed tip flow is much less dominated by turbulent dissipation and is thus less sensitive to the choice of turbulence model. These results clearly demonstrate that blade tip heat transfer is a strong function of Mach number, an important implication when considering the use of low speed experimental testing and associated CFD validation in engine blade tip design. Copyright © 2009 by ASME.

Factors affecting seismic response of submarine slopes

The response of submerged slopes on the continental shelf to seismic or storm loading has become an important element in the risk assessment for offshore structures and "local" tsunami hazards worldwide. The geological profile of these slopes typically includes normally consolidated to lightly overconsolidated soft cohesive soils with layer thickness ranging from a few meters to hundreds of meters. The factor of safety obtained from pseudo-static analyses is not always a useful measure for evaluating the slope response, since values less than one do not necessarily imply slope failure with large movements of the soil mass. This paper addresses the relative importance of different factors affecting the response of submerged slopes during seismic loading. The analyses use a dynamic finite element code which includes a constitutive law describing the anisotropic stress-strain-strength behavior of normally consolidated to lightly overconsolidated clays. The model also incorporates anisotropic hardening to describe the effect of different shear strain and stress histories as well as bounding surface principles to provide realistic descriptions of the accumulation of the plastic strains and excess pore pressure during successive loading cycles. The paper presents results from parametric site response analyses on slope geometry and layering, soil material parameters, and input ground motion characteristics. The predicted maximum shear strains, permanent deformations, displacement time histories and maximum excess pore pressure development provide insight of slope performance during a seismic event. © 2006 Author(s). This work is licensed under a Creative Commons License.

Thin film coil design considerations for wireless power transfer in flat panel display

Wireless power transfer is experimentally demonstrated by transmission between an AC power transmitter and receiver, both realised using thin film technology. The transmitter and receiver thin film coils are chosen to be identical in order to promote resonant coupling. Planar spiral coils are used because of the ease of fabrication and to reduce the metal layer thickness. The energy transfer efficiency as a function of transfer distance is analysed along with a comparison between the theoretical and the experimental results. © 2012 Materials Research Society.

Linear stability of miscible two-fluid flow down an incline

We show that miscible two-layer free-surface flows of varying viscosity down an inclined substrate are different in their stability characteristics from both immiscible two-layer flows, and flows with viscosity gradients spanning the entire flow. New instability modes arise when the critical layer of the viscosity transport equation overlaps the viscosity gradient. A lubricating configuration with a less viscous wall layer is identified to be the most stabilizing at moderate miscibility (moderate Peclet numbers). This also is in contrast with the immiscible case, where the lubrication configuration is always destabilizing. The co-existence that we find under certain circumstances, of several growing overlap modes, the usual surface mode, and a Tollmien-Schlichting mode, presents interesting new possibilities for nonlinear breakdown. © 2013 AIP Publishing LLC.

Glass-polymer superlattice for integrated optics

Glass and polymer interstacked superlattice like nanolayers were fabricated by nanosecond-pulsed laser deposition with a 193-nm-ultraviolet laser. The individual layer thickness of this highly transparent thin film could be scaled down to 2 nm, proving a near atomic scale deposition of complex multilayered optical and electronic materials. The layers were selectively doped with Er3\+ and Eu3\+ ions, making it optically active and targeted for integrated sensor application. © The Authors.

Non-destructive optical characterization of phase separation in bulk heterojunction organic photovoltaic cells

The dithiophene donor-acceptor copolymers that are bridged either with carbon (C-PCPDTBT) or silicon atoms (Si-PCPDTBT) belong to a promising family of materials for use in photoactive layers for organic photovoltaic cells (OPVs). In this work, we implement the non-destructive Spectroscopic Ellipsometry technique in the near infrared to the far ultraviolet spectral region in combination with advanced theoretical modeling to investigate the vertical distribution of the C-PCPDTBT and Si-PCPDTBT polymer and fullerene ([6,6]-phenyl C71-butyric acid methyl ester - PC70BM) phases in the blend, as well as the effect of the polymer-to-fullerene ratio on the distribution mechanism. It was found that the C-PCPDTBT:PC70BM blends have donor-enriched top regions and acceptor-enriched bottom regions, whereas the donor and acceptor phases are more homogeneously intermixed in the Si-PCPDTBT:PC70BM blends. We suggest that the chemical incompatibility of the two phases as expressed by the difference in their surface energy, may be a key element in promoting the segregation of the lower surface phase to the top region of the photoactive layer. We found that the increase of the photoactive layer thickness reduces the polymer enrichment at the cathode, producing a more homogeneous phase distribution of donor and acceptor in the bulk that leads to the increase of the OPV efficiency. © 2014 Elsevier B.V.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Investigation on the structural origin of n-type conductivity in InN films

This work presents a study of the correlation between the electrical properties and the structural defects in nominally undoped InN films. It is found that the density of edge-type threading dislocations (TDs) considerably affects the electron concentration and mobility in InN films. The Hall-effect measured electron concentration increases, while the Hall mobility decreases with the increase in the edge-type TD density. With the combination of secondary ion mass spectrometry and positron annihilation analysis, we suggest that donor-type point defects at the edge-type TD lines may serve as dominant donors in InN films and affect the carrier mobility.

Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films

A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.

Solid source MBE growth of quantum cascade lasers

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

Silicon membrane resonant-cavity-enhanced photodetector

A Si resonant-cavity-enhanced (RCE) photodiode was fabricated on a silicon membrane. The Si membrane was formed by etching from the back side of the silicon-on-insulator substrate with the buried SiO2 layer as etch-stop layer. A gold layer was deposited serving as an electrode layer and bottom mirror of the RCE photodiode. The photodiode had an external quantum efficiency of 33.8% at the resonant wavelength of 848 nm and a full width at half maximum (FWHM) of 17 nm. The responsivity was 4.6 times that of a conventional Si p-i-n photodiode with the same absorption layer thickness. (c) 2005 American Institute of Physics.

Study on growth mechanism of low-temperature prepared microcrystalline Si thin films

Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.