The youngest split in sympatric schizothoracine fish (Cyprinidae) is shaped by ecological adaptations in a Tibetan Plateau glacier lake

Although new empirical evidence shows that sympatric speciation has occurred in some species, there are few indisputable model organisms for this process of speciation. The two subspecies (Gymnocypris eckloni eckloni and G. e. scoliostomus) of the schizothoracine Gymnocypris fish species complex from a small glacier lake in the Tibetan Plateau, Lake Sunmcuo, fit several of the key characteristics of the sympatric speciation model. We used combined mitochondrial control region sequences and the cytochrome b gene (1894 bp) to address the phylogenetics and population genetics of 232 specimens of G. e. eckloni and G. e. scoliostomus, as well as all of its closely related sister species. We found that: (i) a total of four old lineages were uncovered in the widespread G. e. eckloni, of which only one was shown to be shared with all G. e. scoliostomus individuals and (ii) the new subspecies (G. e. scoliostomus) evolved in Lake Sunmcuo from the ancestral G. e. eckloni population within approximately 0.057 Ma. These two taxa of the species complex are morphologically distinct, and reproductive isolation is further suggested. Ecological disruptive selection based on morphological traits (e.g. mouth cleft characters) and food utilization may be a mechanism of incipient speciation of two sympatric populations within Lake Sunmcuo. This study provides the first genetic evidence for sympatric speciation in the schizothoracine fish.

Enhanced expression of antifreeze protein genes drives the development of freeze tolerance in an Antarctica isolate of Chlorella vulgaris

In adaptation to new environments, organisms may accumulate mutations within encoding sequences to modify protein characteristics or acquire mutations within regulatory sequences to alter gene expression levels. With the development of antifreeze capability as the example, this study presents the evidence that change in gene expression level is probably the most important mechanism for adaptive evolution in a green alga Chlorella vulgaris. C. vulgaris NJ-7, an isolate from Antarctica, possesses an 18S rRNA sequence identical to that of a temperate isolate, SAG211-11b/UTEX259, but shows much higher freeze tolerance than the later isolate. The chromosomal DNA/cDNA of four antifreeze genes, namely hiC6, hiC12, rpl10a and hsp70, from the two isolates of C. vulgaris were cloned and sequenced, and very few variations of deduced amino acid sequences were found. In contrast, the transcription of hiC6, hiC12 and rpl10a was greatly intensified in NJ-7 compared to that in UTEX259, which is correlated to the significantly enhanced freeze tolerance of the Antarctica isolate. (C) 2009 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

Phosphorus in suspended matter and sediments of a hypertrophic lake. A case study: Lake Dianchi, China

From June 2004 to December 2004, Lake Dianchi, which had large scale of cyanobacterial blooms was investigated in order to study P-fractionation in the suspended matter and the sediment. The investigation improves our understanding of phosphorus in Lake Dianchi and the relationship between phosphorus and cyanobacterial blooms. It contributes to the available literature on the behavior of P in hypertrophic lakes. The distribution of P-fractions in Lake Dianchi was not uniform from northwest to south, but was closely related to the trophic status of the whole lake. The concentrations of total phosphorus, labile P (NH4Cl-P), Organic P (NaOH-NRP) and loss on ignition in suspended matter were positively correlated with the strength of cyanobacterial blooms. Total phosphorus in suspended matter was relatively stable for almost half an year and closely related to Chl. a concentration. The main content of organic phosphorus is in the cyanobacterial blooms. The concentrations of phosphorus bound to metal oxides and carbonates (NaOH-SRP and HCl-P) in sediment were similar to NaOH-SRP and HCl-P in the corresponding suspended matter. The latter two forms of P in suspended matter were not affected by cyanobacterial blooms, indicating that the inorganic phosphorus is derived from the sediment after resuspension from the sediment due to wind and wave action. The contribution of the different P-fractions to TP in sediment and in suspended matter indicates that NH4Cl-P in the suspended matter is an important buffer for maintaining dissolved phosphorus in water.

Dislocation scattering in AlxGa1-xN/GaN heterostructures

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Reduced dynamics with renormalization in solid-state charge qubit measurement

Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement.

Observation of the surface circular photogalvanic effect in InN films

A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Dislocation core effect scattering in a quasitriangle potential well

A theory of scattering by charged dislocation lines in a quasitriangle potential well of AlxGa1-xN/GaN heterostructures is developed. The dependence of mobility on carrier sheet density and dislocation density is obtained. The results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given.

Magnetic field switching in parallel quantum dots

We show that the Coulomb blockade in parallel dots pierced by magnetic flux Phi completely blocks the resonant current for any value of Phi except for integer multiples of the flux quantum Phi(0). This non-analytic (switching) dependence of the current on Phi arises only when the dot states that carry the current are of the same energy. The time needed to reach the steady state, however, diverges when Phi -> n Phi(0). Copyright (C) EPLA, 2009

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

In the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling, the binding energy E-b and spin-orbit split energy Gamma of the ground state of a hydrogenic donor impurity in AlGaN/GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing, (1) the effective width of quantum well (W) over bar decreases and (2) the binding energy increases monotonously, and in the mean time, (3) the spin-orbit split energy Gamma decreases drastically. (4) The maximum of Gamma is 1.22 meV when the electric field of heterointerface is 1 MV/cm.

Depolarization blueshift in intersubband transitions of triangular quantum wires

Major State Basic Research Project 973 program of China 2006CB604907;National Science Foundation of China 60776015 60976008;863 High Technology R&D Program of China 2007AA03Z402

Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction

The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by Xray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.

A study of indium incorporation in In-rich InGaN grown by MOVPE

InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.