Evaluation of the effect of the stoichiometric ratio of Ca/Cu on the electrical and microstructural properties of the CaCu3Ti4O12 polycrystalline system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Comparison of non-Ohmic accelerated ageing of the ZnO- and SnO2-based voltage dependent resistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Evidence of distinct phase transformations in lithium phosphate glass Li2O-P2O5

The purpose of this work is to study the Li2O-P2O5 glass using the differential scanning calorimetry (DSC) and x-ray diffraction (XRD) techniques to understand the crystallization process in this glass matrix. To study the glass by DSC, screened samples with different particle sizes to resolve the crystallization peaks were used. Both crystallization peaks were attributed to Li6P6O18 and LiPO3 phases. This evidence was corroborated by XRD analysis on glasses annealed at different temperatures in order to crystallize these phases.

Effects of crystallization conditions on dielectric and ferroelectric properties of PZT thin films

This paper reports studies on dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films crystallized by conventional thermal annealing (CTA) and rapid thermal annealing (RTA) in air, oxygen and nitrogen atmospheres to better understand, control and optimize these properties. The dielectric constant (epsilon) and dissipation factor (tan delta) values, at a frequency of 100 kHz; for film crystallized in air by CTA process, were 358 and 0.039, respectively. Considering the same frequency for film crystallized in air by RTA, these values were 611 and 0.026, respectively. The different dielectric values were justified by a space-charge or interfacial polarization in films, often characterized as Maxwell-Wagner type. This effect was also responsible to dispersion at frequencies above 1 MHz in film crystallized in air by CTA process and film crystallized by RTA in oxygen atmosphere. The film crystallized by RTA under nitrogen atmosphere presented an evident dispersion at frequencies around 100 Hz, characterized by an increase in both epsilon and tan delta. This dispersion was attributed to conductivity effects. The remanent polarization (P-r) and coercive field (E-c) were also obtained for all films. Films obtained from RTA in air presented higher P-r (17.8 muC cm(-2)) than film crystallized from CTA (7.8 muC cm(-2)). As a function of the crystallization atmospheres, films crystallized by RTA in air and nitrogen presented essentially the same P-r values (around 18 muC cm(-2)) but the P-r (3.9 muC cm(-2)) obtained from film crystallized under oxygen atmosphere was profoundly influenced.

Induced crystallization on tellurite 20Li(2)O-80TeO(2) glass

Crystallization kinetics and structure of 20Li(2)O-80TeO(2) glasses are studied using x-ray diffraction, Fourier transform infrared spectroscopy and differential scanning calorimetry techniques. XRD results show gamma-TeO2, alpha-TeO2 and Li2Te2O5 phase crystallization in the glass matrix. The infrared band structure of this glass is similar to that observed in glassy TeO2. Activation energies were evaluated from Lorentzian three-peak deconvolution of the DSC crystallization peak recorded at different particle sizes. As the obtained activation values were very close, it was not possible to establish a hierarchy on the crystallization of this glass. In addition, the height of the Lorentzian peaks ( delta T-P1, delta T-P2 and delta T-P3) for each sample was measured and plotted against the nucleation temperature. The presence of two maxima at around 284 and 304 degrees C suggests at least two maximum nucleation temperatures in the studied 20Li(2)O-80TeO(2) glass.

New laser lines from CHD2OH methanol deuterated isotope

Through the optical pump technique we have reinvestigated the CHD2OH molecule as a source of far-infrared (FIR) laser lines using for the first time a CO2 laser lasing on regular, hot, and sequence bands. As a consequence, we present here spectroscopic data of 16 now FIR laser transitions from this molecule. Furthermore, we also present a catalogue of all FIR laser lines generated from CHD2OH.

DCOOD optically pumped by a (CO2)-C-13 laser: new terahertz laser lines

In this work we report on new optically pumped THz laser lines from deuterated formic acid (DCOOD). An isotopic (CO2)-C-13 laser was used for the first time as a pump source for this molecule, and a Fabry-Perot cavity was used as a THz laser resonator. Optoacoustic absorption spectra were used as a guide to search for new THz laser lines. We could observe six new laser lines in the range from 303.8 mu m (0.987 THz) to 725.1 mu m (0.413 THz). The lines were characterized according to wavelength, relative polarization, relative intensity, and optimum working pressure. The transferred lamb-dip technique was used to measure the frequency absorption transition for both of these laser lines. Furthermore, we also present a catalogue of all THz laser lines generated from DCOOD.

Structural depth profile and nanoscale piezoelectric properties of randomly oriented Pb(Zr0.50Ti0.50)O-3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Features of dielectric response in PMN-PT ferroelectric ceramics

In this paper, electrical and structural properties were reported for pyrochlore free (1-x)[Pb(Mg1/3Nb2/3)O-3] - xPbTiO(3) (PMN-PT) (with 35 mol% PbTiO3) ceramics obtained from fine powders. Dielectric studies were focused on the investigation of the complex dielectric permittivity (epsilon '-i epsilon '') as a function of frequency and temperature. The effects of the dc applied electric field on dielectric response were also investigated. Results revealed a field dependence dielectric anomaly in the dielectric permittivity curves (epsilon(T)) in the low dc electric field region, which in turn prevails in the whole analysed frequency interval. To the best of our knowledge, these properties for the PMN-PT ceramic system have not been reported before as in this work. The results were analysed within the framework of the current models found in the literature.

Ionized oxygen vacancy-related electrical conductivity in (Pb(1-x)La(x)) (Zr(0.90)Ti(0.10))(1-x/4)O(3) ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric investigations in Sr0.75Ba0.25Nb2O6 relaxor ferroelectric thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of the sintering conditions on the electrical properties of Nd(3+) modified PLZT ceramics

The effect of the sintering method on the microstructural and electrical properties of (Pb(0.89)Nd(0.02)La(0.09))(Zr(0.65)Ti(0.35))O(3) (PNLZT) ceramics was studied by impedance spectroscopy. Structural and microstructural analyses were performed using x-ray and scanning electron microscopy techniques. Two different sintering routes were employed: the conventional and the hot-pressing sintering methods. The impedance analysis provided a convincing evidence for the existence of both grain (g) and grain boundary (gb) contributions to the conduction process. An equivalent circuit for the impedance behaviour has been proposed and discussed. The variation in the sintering method produces significant changes in the grain and grain boundary conductivities. For the grain effect, the main conduction mechanism has been associated with oxygen vacancy migration. Otherwise, for grain boundary conductivity the impedance behaviour has been discussed in terms of the brick-layer and the constriction resistance models (BLM and CRM, respectively).

Domain wall contribution to dielectric and piezoelectric responses in 0.65Pb(Mg1/3Nb2/3)-0.35PbTiO(3) ferroelectric ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Inversion in the temperature coefficient of the optical path length close to the glass transition temperature in tellurite glasses

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)