Ratchet for energy transport between identical reservoirs

A one-dimensional periodic array of elastically colliding hard points, with a noncentrosymmetric unit cell, connected at its two ends to identical but nonthermal energy reservoirs, is shown to carry a sustained unidirectional energy current.

Scaling analysis of momentum and heat transport in gas tungsten arc weld pools

A systematic procedure is outlined for scaling analysis of momentum and heat transfer in gas tungsten arc weld pools. With suitable selections of non-dimentionalised parameters, the governing equations coupled with appropriate boundary conditions are first scaled, and the relative significance of various terms appearing in them is analysed accordingly. The analysis is then used to predict the orders of magnitude of some important quantities, such as the velocity scene lit the top surface, velocity boundary layer thickness, maximum temperature increase in the pool, and time required for initiation of melting. Some of the quantities predicted from the scaling analysis can also be used for optimised selection of appropriate grid size and time steps for full numerical simulation of the process. The scaling predictions are finally assessed by comparison with numerical results quoted in the literature, and a good qualitative agreement is observed.

A scaling analysis of momentum and heat transport in laser surface melting

In this paper, we outline a systematic procedure for scaling analysis of momentum and heat transfer in laser melted pools. With suitable choices of non-dimensionalising parameters, the governing equations coupled with appropriate boundary conditions are first scaled, and the relative significance of various terms appearing in them are accordingly analysed. The analysis is then utilised to predict the orders of magnitude of some important quantities, such as the velocity scale at the top surface, velocity boundary layer thickness, maximum temperature rise in the pool, fully developed pool-depth, and time required for initiation of melting. Using the scaling predictions, the influence of various processing parameters on the system variables can be well recognised, which enables us to develop a deeper insight into the physical problem of interest. Moreover, some of the quantities predicted from the scaling analysis can be utilised for optimised selection of appropriate grid-size and time-steps for full numerical simulation of the process. The scaling predictions are finally assessed by comparison with experimental and numerical results quoted in the literature, and an excellent qualitative agreement is observed.

Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals

Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li3+ ions at various fluences ranging from 10(10) to 10(14) ions/cm(2) at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6x10(14) ions/cm(2), electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5x10(15) (for unirradiated) to 1.1x10(15)/cm(3) and an increase in mobility from 5.4x10(4) to 1.67x10(5) cm(2)/V s. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6x10(14) ions/cm(2) fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies. (C) 2001 American Institute of Physics.

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

General theories for the electrical transport properties of carbon nanotubes

We have shown that the general theories of metals and semiconductors can be employed to understand the diameter and voltage dependency of current through metallic and semiconducting carbon nanotubes, respectively. The current through a semiconducting multiwalled carbon nanotube (MWCNT) is associated with the energy gap that is different for different shells. The contribution of the outermost shell is larger as compared to the inner shells. The general theories can also explain the diameter dependency of maximum current through nanotubes. We have also compared the current carrying ability of a MWCNT and an array of the same diameter of single wall carbon nanotubes (SWCNTs) and found that MWCNTs are better suited and deserve further investigation for possible applications as interconnects.

Carrier density-dependent transport in poly(3-methylthiophene): from injection-limited to space-charge-limited current

Current-voltage (I-V) and impedance measurements were carried out in doped poly(3-methylthiophene) devices by varying the carrier density. As the carrier concentration reduces the I-V characteristics indicate that the conduction mechanism is limited by metal-polymer interface, as also observed in impedance data. The temperature dependence of I-V in moderately doped samples shows a trap-controlled space-charge-limited conduction (SCLC); whereas in lightly doped devices injection-limited conduction is observed at lower bias and SCLC at higher voltages. The carrier density-dependent quasi-Fermi level adjustment and trap-limited transport could explain this variation in conduction mechanism. Capacitance measurements at lower frequencies and higher bias voltages show a sign change in values due to the significant variations in the relaxation behaviour for lightly and moderately doped samples. The electrical hysteresis increases as carrier density is reduced due to the time scales involved in the de-trapping of carriers.

Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon

We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN(Delta = gamma), the density of states in the lower subband increases more that of the upper, in which Delta and gamma are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.

Dynamics and transport properties of Kondo insulators

A many-body theory of paramagnetic Kondo insulators is described, focusing specifically on single-particle dynamics, scattering rates, dc transport and optical conductivities. This is achieved by development of a non-perturbative local moment approach to the symmetric periodic Anderson model within the framework of dynamical mean-field theory. Our natural focus is the strong-coupling, Kondo lattice regime, in particular the resultant 'universal' scaling behaviour in terms of the single, exponentially small low-energy scale characteristic of the problem. Dynamics/transport on all relevant (ω, T)-scales are considered, from the gapped/activated behaviour characteristic of the low-temperature insulator through to explicit connection to single-impurity physics at high ω and/or T; and for optical conductivities emphasis is given to the nature of the optical gap, the temperature scale responsible for its destruction and the consequent clear distinction between indirect and direct gap scales. Using scaling, explicit comparison is also made to experimental results for dc transport and optical conductivities of Ce3Bi4Pt3, SmB6 and YbB12. Good agreement is found, even quantitatively; and a mutually consistent picture of transport and optics results.

Studies on the structural and ionic transport properties at elevated temperatures of La1-xMnO3 +/-delta synthesized by a wet chemical method

Structural transformation and ionic transport properties are investigated on wet-chemically synthesized La1-xMnO3 (X=0.0-0.18) compositions. Powders annealed in oxygen/air at 1000-1080 K exhibit cubic symmetry and transform to rhombohedral on annealing at 1173-1573 K in air/oxygen. Annealing above 1773 K in air or in argon/helium at 1473 K stabilized distorted rhombohedral or orthorhombic symmetry. Structural transformations are confirmed from XRD and TEM studies. The total conductivity of sintered disks, measured by four-probe technique, ranges from 5 S cm(-1) at 298 K to 105 S cm(-1) at 1273 K. The ionic conductivity measured by blocking electrode technique ranges from 1.0X10(-6) S cm(-1) at 700 K to 2.0X10(-3) S cm(-1) at 1273 K. The ionic transference number of these compositions ranges from 3.0X10(-5) to 5.0X10(-5) at 1273 K. The activation energy deduced from experimental data for ionic conduction and ionic migration is 1.03-1.10 and 0.80-1.00 eV, respectively. The activation energy of formation, association and migration of vacancies ranges from 1.07 to 1.44 eV. (C) 2002 Elsevier Science B.V. All rights reserved.

A Single-Crystal Study Of The Defect Chemistry And Transport-Properties Of Silver Selenide, Ag2+Delta-Se

Electronic and ionic conductivities of silver selenide crystal (Ag$_2+\delta$ Se) have been measured over a range of stoichiometry through the $\alpha - \beta$ transition by using solid state electrochemical techniques. In the high temperature $\beta$-phase Ag$_2$Se shows metallic behaviour of electronic conductivity for high values of $\delta$; with decrease in $\delta$, the conductivity of the material exhibits a transition. The magnitude of change in electronic conductivity at the $\alpha - \beta$ transition is also determined by stoichiometry. Ionic conductivity of the $\beta$-phase does not vary significantly with stochiometry. Ionic conductivity of the $\beta$-does not vary significantly with stoichiometry. A model to explain the observed transport properties has been suggested.

Numerical modeling of the contaminant Transport through stratified soil

The transport processes of the dissolved chemicals in stratified or layered soils have been studied for several decades. In case of the solute transport through stratified layers, interface condition plays an important role in determining appropriate transport parameters. First‐ type and third‐ type interface conditions are generally used in the literature. A first‐type interface condition will result in a continuous concentration profile across the interface at the expense of solute mass balance. On the other hand, a discontinuity in concentration develops when a third‐ type interface condition is used. To overcome this problem, a combined first‐ and third‐ type condition at the interface has been widely employed which yields second‐ type condition. This results in a similar break‐through curve irrespective of the layering order, which is non‐physical. In this work, an interface condition is proposed which satisfies the mass balance implicitly and brings the distinction between the breakthrough curves for different layering sequence corroborating with the experimental observations. This is in disagreement with the earlier work by H. M. Selim and co‐workers but, well agreement with the hypothetical result by Bosma and van der Zee; and Van der Zee.