DEVELOPMENT AND ANALYSIS OF DUAL FREQUENCY MICROSTRIP ANTENNAS

Department of Elecctronics, Cochin University of Science and Technology

Development and Analysis of a Drum-Shaped Compact Microstrip Antenna

The thesis is the outcome of the experimental and theoretical investigations on a new compact drum-shaped microstrip antenna. A new compact antenna suitable for personal communication system(PCS), Global position System(GPS) and array applications is developed and analysed. The generalised cavity model and spatial fourier transform technique are suitably modified for the analysis of the antenna. The predicted results are compared with experimental results and excellent agreement is observed. The experimental work done by the author in related fields are incorporated as three appendices in this thesis. A single feed dual frequency microstrip antenne is presented in appendix A.Appendix B describes a new broadband dual frequeny microstrip antenna. The bandwidth enhancement effect of microstrip antennas through dielectric resonator loading is demonstarted in Appendix C.

Development and Analysis of Microstrip Antennas For Dual Band Microwave Communication

The thesis explores the outcome of the exhaustive theoretical and experimental investigations performed on Octagonal Microstrip Antenna configurations. Development of the MATLAB TM backed 3D-Conformal Finite Difference Time Domain (CFDTD)Modeller for the numerical computation of the radiation characteristics of the antenna is the theme of the work. The predicted results are verified experimentally and by IE3D TM simulation. The influence of the patch dimensions,feed configurations,feed dimensions and feed positions upon the radiation performance of the antenna is studied in detail. Octagonal Microstrip Antenna configurations suitable for Mobile-Bluetooth application is dealt in detail. A simple design formula for the regular Octagonal geometry is also presented. A compact planar multi band antenna for GPS/DCS/2.4/5.8GHz WLAN application is included as appendix A. Planar near field measurement technique is explained in appendix B.

Photoacoustic investigation of intrinsic and extrinsic Si

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.

Investigations on Reconfigurable Dual Frequency Microstrip Antennas Controlled by PIN Diodes and Varactors

In this work,we investigate novel designs of compact electronically reconfigurable dual frequency microstrip antennas with a single feed,operating mainly in L-band,without using any matching networks and complicated biasing circuitry.These antennas have been designed to operate in very popular frequency range where a great number of wireless communication applications exist.Efforts were carried out to introduce a successful,low cost reconfigurable dual-frequency microstrip antenna design to the wireless and radio frequency design community.

Impedance field and transition from thermal to shot noise in Cd1-xZnxTe semi-insulating Ohmic detectors

Within a drift-diffusion model we investigate the role of the self-consistent electric field in determining the impedance field of a macroscopic Ohmic (linear) resistor made by a compensated semi-insulating semiconductor at arbitrary values of the applied voltage. The presence of long-range Coulomb correlations is found to be responsible for a reshaping of the spatial profile of the impedance field. This reshaping gives a null contribution to the macroscopic impedance but modifies essentially the transition from thermal to shot noise of a macroscopic linear resistor. Theoretical calculations explain a set of noise experiments carried out in semi-insulating CdZnTe detectors.

Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011, 1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC terminals. This results in extended conjugated structure causing reduction in optical band gap

Comments on Simple and Accurate Formula for the Resonant Frequency of the Equilateral Triangular Microstrip Patch Antenna

Antennas and Propagation, IEEE Transactions on,VOL 48,issue 4,pp 636

Integració 3D de detectors de píxels híbrids

La miniaturització de la industria microelectrònica és un fet del tot inqüestionables i la tecnologia CMOS no n'és una excepció. En conseqüència la comunitat científica s'ha plantejat dos grans reptes: En primer lloc portar la tecnologia CMOS el més lluny possible ('Beyond CMOS') tot desenvolupant sistemes d'altes prestacions com microprocessadors, micro - nanosistemes o bé sistemes de píxels. I en segon lloc encetar una nova generació electrònica basada en tecnologies totalment diferents dins l'àmbit de les Nanotecnologies. Tots aquests avanços exigeixen una recerca i innovació constant en la resta d'àrees complementaries com són les d'encapsulat. L'encapsulat ha de satisfer bàsicament tres funcions: Interfície elèctrica del sistema amb l'exterior, Proporcionar un suport mecànic al sistema i Proporcionar un camí de dissipació de calor. Per tant, si tenim en compte que la majoria d'aquests dispositius d'altes prestacions demanden un alt nombre d'entrades i sortides, els mòduls multixip (MCMs) i la tecnologia flip chip es presenten com una solució molt interessant per aquests tipus de dispositiu. L'objectiu d'aquesta tesi és la de desenvolupar una tecnologia de mòduls multixip basada en interconnexions flip chip per a la integració de detectors de píxels híbrids, que inclou: 1) El desenvolupament d'una tecnologia de bumping basada en bumps de soldadura Sn/Ag eutèctics dipositats per electrodeposició amb un pitch de 50µm, i 2) El desenvolupament d'una tecnologia de vies d'or en silici que permet interconnectar i apilar xips verticalment (3D packaging) amb un pitch de 100µm. Finalment aquesta alta capacitat d'interconnexió dels encapsulats flip chip ha permès que sistemes de píxels tradicionalment monolítics puguin evolucionar cap a sistemes híbrids més compactes i complexes, i que en aquesta tesi s'ha vist reflectit transferint la tecnologia desenvolupada al camp de la física d'altes energies, en concret implantant el sistema de bump bonding d'un mamògraf digital. Addicionalment s'ha implantat també un dispositiu detector híbrid modular per a la reconstrucció d'imatges 3D en temps real, que ha donat lloc a una patent.

The molecular structure of hexamethyldigermane determined by gas-phase electron diffraction with theoretical calculations for (CH3)3M-M(CH3)3 Where M = C, Si, and Ge

Gas-phase electron diffraction (GED) data together with results from ab initio molecular orbital calculations (HF and MP2/6-311+G(d,p)) have been used to determine the structure of hexamethyldigermane ((CH3)3Ge-Ge(CH3)3). The equilibrium symmetry is D3d, but the molecule has a very low-frequency, largeamplitude, torsional mode (φCGeGeC) that lowers the thermal average symmetry. The effect of this largeamplitude mode on the interatomic distances was described by a dynamic model which consisted of a set of pseudoconformers spaced at even intervals. The amount of each pseudoconformer was obtained from the ab initio calculations (HF/6-311+G(d,p)). The results for the principal distances (ra) and angles (∠h1) obtained from the combined GED/ab initio (with estimated 1σ uncertainties) are r(Ge-Ge) ) 2.417(2) Å, r(Ge-C) ) 1.956(1) Å, r(C-H) ) 1.097(5) Å, ∠GeGeC ) 110.5(2)°, and ∠GeCH ) 108.8(6)°. Theoretical calculations were performed for the related molecules ((CH3)3Si-Si(CH3)3 and (CH3)3C-C(CH3)3).

Gas-phase kinetics of chlorosilylene reactions. I. ClSiH + Me3SiH: absolute rate measurements and theoretical calculations for prototype Si−H insertion reactions

Time-resolved studies of chlorosilylene, CISiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane, Me3SiH, in the gas phase. The reaction was studied at total pressures up to 100 torr (with and without added SF6) over the temperature range 297-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log(k/cm(3) molecule(-1) s(-1)) = (-13.97 +/- 0.25) + (12.57 +/- 1.64) kJ mol(-1)/RT In 10. The Arrhenius parameters are consistent with a mechanism involving an intermediate complex, whose rearrangement is the rate-determining step. Quantum chemical calculations of the potential energy surface for this reaction and also the reactions of CISiH with SiH4 and the other methylsilanes support this conclusion. Comparisons of both experiment and theory with the analogous Si-H insertion processes of SiH2 and SiMe2 show that the main factor causing the lower reactivity of ClSiH is the secondary energy barrier. The calculations also show the existence of a novel intramolecular H-atom exchange process in the complex of ClSiH with MeSiH3.