Low temperature synthesis, structure and properties of alkali-doped La2NiO4, LaNiO3 and LaNi0.85Cu0.15O3 from alkali hydroxide fluxes

We report a low-temperature synthesis of La1.95Na0.05NiO4 from NaOH flux, La0.97K0.03NiO3 and La0.95K0.05Ni0.85Cu0.15O3 phases from KOH flux at 400 degreesC. Alkali-doped LaNiO3 can be prepared in KOH, but not in NaOH flux and La2NiO4 can be prepared in NaOH, but not in KOH flux. The flux-grown oxides were characterized by powder X-ray Rietveld profile analysis and electron microscopy. Sodium doped La2NiO4 crystallizes in orthorhombic structure and potassium doped LaNiO3-phases crystallizes in rhombohedral structure. La1.95Na0.05NiO4 is weakly paramagnetic and semiconducting while La0.97K0.03NiO3 and La0.95K0.05Ni0.85Cu0.15O3 show Pauli paramagnetic and metallic behavior. (C) 2002 Editions scientifiques et medicales Elsevier SAS. All rights reserved.

Properties of the Ferrimagnetic Double-Perovskites A2FeReO6 (A=Ba and Ca)

We have synthesized ceramics of A2FeReO6 double-perovskites A2FeReO6 (A=Ba, Ca). Structural characterizations indicate a cubic structure with a=8.0854(1) Å for Ba2FeReO6 and a distorted monoclinic symmetry with a=5.396(1) Å, b=5.522(1) Å, c=7.688(2) Å and β=90.4° for Ca2FeReO6. The barium compound is metallic from 5K to 385K, i.e. no metal-insulator transition has been seen up to 385K, and the calcium compound is semiconducting from 5K to 385K. Magnetization measurements show a ferrimagnetic behavior for both materials, with Tc =315 K for Ba2FeReO6 and above 385K for Ca2FeReO6. At 5K we observed, only for Ba2FeReO6, a negative magnetoresistance of 10% in a magnetic field of 5T. Electrical, magnetic and thermal properties are discussed and compared to those of the analogous compounds Sr2Fe(Mo,Re)O6 recently studied.

Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films

Epitaxial films of La4BaCu5O13+δ and La4BaCu4NiO13+δ oxides are grown with a-b plane parallel to (100) of LaAlO3 and SrTiO3 by pulsed-laser deposition. The conductivity measurements performed along the c direction using LaNiO3 as the electrode show metallic behavior whereas they show semiconducting behavior in the a-b plane. Anisotropic transport property of these thin films is explained on the basis of nearly 180° connected Cu–O–Cu chains with an average Cu–O distance of 1.94 Å along the c direction and nearly 180° and 90° connected Cu–O–Cu chains in the a-b plane with short and long Cu–O distances ranging from 1.863 to 2.303 Å. YBa2Cu3O7−x has been grown along (00l) on La4BaCu5O13+δ and shows a Tc of 88 K.

State of bismuth in BaBiO3 and BaBi1-xPbxO3: Bi 4f photoemission and Bi L3 absorption spectroscopic studies

The 2p 6d feature in the Bi L3 spectra has different energies in the semiconducting (0.0≤x<0.7) and the superconducting (x=0.75) compositions of BaBi1−xPbxO3. The Bi 4f core level spectrum shows distinct features ascribable to Bi III and Bi V in BaBiO3 and in the semiconducting compositions; the width of the 4f peaks is also considerably larger in these compositions compared to that in BaBi0.25Pb0.75O3, which shows a single sharp Bi 4f feature.

Gas-phase synthesis of size-classified polyhedral In(2)O(3) nanoparticles

Monodisperse polyhedral In(2)O(3) nanoparticles were synthesized by differential mobility classification of a polydisperse aerosol formed by evaporation of indium at atmospheric pressure. When free molten indium particles oxidize, oxygen is absorbed preferentially on certain planes leading to the formation of polyhedral In(2)O(3) nanoparticles. It is shown that the position of oxygen addition, its concentration, the annealing temperature and the type of carrier gas are crucial for the resulting particle shape and crystalline quality. Semiconducting nanopolyhedrals, especially nanocubes used for sensors, are expected to offer enhanced sensitivity and improved response time due to the higher surface area as compared to spherical particles.

Low temperature synthesis of layered NaxCoO2 and KxCoO2 from NaOH/KOH fluxes and their ion exchange properties

We report a low temperature synthesis of layered Na0×20CoO2 and K0×44CoO2 phases from NaOH and KOH fluxes at 400°C. These layered oxides are employed to prepare hexagonal HCoO2, LixCoO2 and Delafossite AgCoO2 phases by ion exchange method. The resulting oxides were characterised by powder X-ray diffraction, X-ray photoelectron spectroscopy, SEM and EDX analysis. Final compositions of all these oxides are obtained from chemical analysis of elements present. Na0×20CoO2 oxide exhibits insulating to metal like behaviour, whereas AgCoO2 is semiconducting.

Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy

Semiconducting chalcogenide glasses in the systems GeSe and GeSeTe with the addition of bismuth show unusual phenomena of p - to - n transition. Samples for characterization were prepared in bulk form by melt-quenching technique, with increasing Bi at. % to replace selenium. Photoluminescence (PL) spectroscopic studies on all the samples were carried out at 4.2K using an Ar-Ion laser for illuminating the samples. The laser power used was 200mw. Both the systems show a decrease in the intensity of PL signal with increasing Bi content. This interesting behavior is discussed on the basis of a charged defect model for chalcogenide glasses, proposed by Mott, Davis and Street (MDS). The effect of bismuth addition on these charged defects is also discussed to explain the carrier type reversal.

Temperature gradient induced phase transitions and morphological changes in diamond thin film

The diamond films were deposited onto a wurtzite gallium nitride (GaN) thin film substrate using hot-filament chemical vapor deposition (HFCVD). During the film deposition a lateral temperature gradient was imposed across the substrate by inclining the substrate. As grown films predominantly showed the hexagonal phase, when no inclination was applied to the substrate. Tilting the substrate with respect to the heating filament by 6 degrees imposed a lateral temperature gradient across the substrate, which induced the formation of a cubic diamond phase. Diamond grains were predominantly oriented in the (100) direction. However, a further increase in the substrate tilt angle to 12 degrees, resulted in grains oriented in the (111) direction. The growth rate and hence the morphology of diamond grains varied along the inclined substrate. The present study focuses on the measurements of dominant phase formation and crystal orientation with varying substrate inclination using orientation-imaging microscopy (OIM). This technique enables direct examination of individual diamond grains and their crystallographic orientation. (C) 2012 Elsevier B.V. All rights reserved.

Electrical conductivity of Ca-doped YFeO3

Electrical conductivity and Seebeck coefficient of calcium-doped YFeO3, a potential cathode material in solid oxide fuel cells (SOFC), are measured as function of temperature and composition in air to resolve conflicts in the literature both on the nature of conduction (n- or p-type) and the types of defects (majority and the minority) present. Compositions of Y1-xCaxFeO3-delta with x = 0.0, 0.025, 0.05 and 0.1 are studied in the temperature range from 625 to 1250 K. All Y1-xCaxFeO3-delta samples show p-type semiconducting behaviour. Addition of Ca up to 5% dramatically increases the conductivity of YFeO3; increase is more gradual up to 10%. A second phase Ca2Fe2O5 appears in the microstructure for Ca concentrations in excess of 11%.

Effect of the Edge Type and Strain on the Structural, Electronic and Magnetic Properties of the BNRs

We present the effect of edge structures on the edge energy and stress of BN nanoribbons. Ab initio density functional calculations show that the armchair edge is lower in energy than the zigzag edge by 0.43 eV/angstrom. Both types of the edges are under the compressive stress. The zigzag edges are mechanically more stable than the armchair edges. Based on the calculated edge energies, the equilibrium shape of the BN flakes are found to be regular hexagonal, and dominated by the armchair edges. The zigzag ribbons are found to be half-metallic, whereas the armchair ribbons are semiconducting.

Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

We have investigated electrical transport properties of long (>10 mu m) multiwalled carbon nanotubes (NTs) by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs) with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. http://dx.doi.org/10.1063/1.4720426]

Electrical Transport Properties of Buckled Carbon Nanotube Arrays

We report on the electrical transport properties of buckled carbon nanotube arrays synthesized by pyrolysis. Analyzing the experimental data based on the general theory of semiconductors, the arrays are predicted to be semiconducting and the band gap can be evaluated. The band gap of different arrays is in 25-50 meV range.

Time evolution of resistance in response to magnetic field: Evidence of glassy transport in La0.85Sr0.15CoO3

We demonstrate the distinct glassy transport phenomena associated with the phase separated and spin-glass-like phases of La0.85Sr0.15CoO3, prepared under different heat-treatment conditions. The low-temperature annealed (phase-separated) sample, exhibits a small change in resistance, with evolution of time, as compared to the high-temperature annealed (spin glass) one. However, the resistance change as a function of time, in both cases, is well described by a stretched exponential fit, signifying the slow dynamics. Moreover, the ultraviolet spectroscopy study evidences a relatively higher density of states in the vicinity of EF for low-temperature annealed sample and this correctly points to its less semiconducting behavior.

Effect of substrate surface roughness on electric current induced flow of liquid metals

Electric current can induce long-range flow of liquid metals over a conducting substrate. This work reports on the effect of the substrate surface roughness on the liquid metal-front velocity during such a flow. Experiments were conducted by passing electric current through liquid gallium placed over similar to 170 nm thick, 500 mu m wide gold and platinum films of varying roughness. The ensuing flow, thus, resembles micro-fluidics behavior in an open-channel. The liquid-front velocity decreased linearly with the substrate surface roughness; this is attributed to the reduction in the effective electric field along the liquid metal-substrate interface with the substrate surface roughness. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4790182]

Thermoelectric properties of Bi-added Co4Sb12 skutterudites

Void filling in (I) Bi-x-added Co4Sb12 or (II) Sb/Bi substitution of Co4Sb12-xBix has been investigated for structural and thermoelectric properties evaluation. X-ray powder data Rietveld refinements combined with electron probe microanalyses showed a polycrystalline and practically Bi-free CoSb3 skutterudite phase as the major constituent as well as a secondary Bi phase in the grain boundaries. For series I alloys, the electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature in the range from 450 to 750 K. The electrical conductivity of all the samples increased with increasing temperature, showing a semiconducting nature with smaller values of the Seebeck coefficient for higher Bi fractions. Conduction over the entire temperature range was found to arise from a single p-type carrier. Thermal conductivity showed a reduction with Bi added in all the samples, except for Bi0.75Co4Sb12, and the lowest lattice thermal conductivity was found for a Bi-added fraction of 0.5. The maximum zT value of 0.53 at 632 K is higher than that of Co4Sb12.