Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films
Data(s) |
13/09/1999
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Resumo |
Epitaxial films of La4BaCu5O13+δ and La4BaCu4NiO13+δ oxides are grown with a-b plane parallel to (100) of LaAlO3 and SrTiO3 by pulsed-laser deposition. The conductivity measurements performed along the c direction using LaNiO3 as the electrode show metallic behavior whereas they show semiconducting behavior in the a-b plane. Anisotropic transport property of these thin films is explained on the basis of nearly 180° connected Cu–O–Cu chains with an average Cu–O distance of 1.94 Å along the c direction and nearly 180° and 90° connected Cu–O–Cu chains in the a-b plane with short and long Cu–O distances ranging from 1.863 to 2.303 Å. YBa2Cu3O7−x has been grown along (00l) on La4BaCu5O13+δ and shows a Tc of 88 K. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/42866/1/Anisotropic_electrical.pdf Herle, Subramanya P and Vedawyas, M and Shivakumara, C and Hegde, MS and Venimadhav, A (1999) Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films. In: Applied Physics Letters, 75 (11). pp. 1598-1600. |
Publicador |
American Institute of Physics |
Relação |
http://apl.aip.org/resource/1/applab/v75/i11/p1598_s1 http://eprints.iisc.ernet.in/42866/ |
Palavras-Chave | #Solid State & Structural Chemistry Unit |
Tipo |
Journal Article PeerReviewed |