Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films


Autoria(s): Herle, Subramanya P; Vedawyas, M; Shivakumara, C; Hegde, MS; Venimadhav, A
Data(s)

13/09/1999

Resumo

Epitaxial films of La4BaCu5O13+δ and La4BaCu4NiO13+δ oxides are grown with a-b plane parallel to (100) of LaAlO3 and SrTiO3 by pulsed-laser deposition. The conductivity measurements performed along the c direction using LaNiO3 as the electrode show metallic behavior whereas they show semiconducting behavior in the a-b plane. Anisotropic transport property of these thin films is explained on the basis of nearly 180° connected Cu–O–Cu chains with an average Cu–O distance of 1.94 Å along the c direction and nearly 180° and 90° connected Cu–O–Cu chains in the a-b plane with short and long Cu–O distances ranging from 1.863 to 2.303 Å. YBa2Cu3O7−x has been grown along (00l) on La4BaCu5O13+δ and shows a Tc of 88 K.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/42866/1/Anisotropic_electrical.pdf

Herle, Subramanya P and Vedawyas, M and Shivakumara, C and Hegde, MS and Venimadhav, A (1999) Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films. In: Applied Physics Letters, 75 (11). pp. 1598-1600.

Publicador

American Institute of Physics

Relação

http://apl.aip.org/resource/1/applab/v75/i11/p1598_s1

http://eprints.iisc.ernet.in/42866/

Palavras-Chave #Solid State & Structural Chemistry Unit
Tipo

Journal Article

PeerReviewed