Estimativa da turbidez atmosférica e radiação solar direta na incidência com base no modelo de Linke para Botucatu/SP, Brasil

O conhecimento sobre a turbidez atmosférica é de grande importância para áreas de climatologia, monitoramento de poluição e estudos da atenuação da radiação solar em condições de céu limpo. Neste trabalho o modelo de turbidez atmosférica de Linke (TL), modificado por Li e Lam é descrito e utilizado na estimativa da turbidez atmosférica e radiação solar direta na incidência (Ib). Os dados de Ib na incidência e radiação global utilizados são do período de 1996 a 2003. Os resultados mostram que TL apresenta sazonalidade em função do clima local variando entre 3,10±0,72 (maio) e 3,93±0,91(setembro), com média anual igual a 3,51±0,25. Na estimativa de Ib, ocorreu sub/superestimativa (MBE), espalhamento (RMSE) e ajustamento (d), respectivamente, em: janeiro: -4,38%; 13,87%; 0,83 e junho: 2,00%; 8,98%; 0,94. Com base nos valores dos três indicativos estatísticos, o melhor desempenho do modelo foi obtido nos meses de céu sem nuvens e baixa poluição.

Utilização do método numérico interpolador de Lagrange para correção de bases de dados de radiometria solar

This work explores the suitability of the Lagrange interpolating polynomial as a tool to estimate and correct solar databases. From the knowledge of the irradiance distribution over a day, a portion of it was removed for applying Lagrange interpolation polynomial. After generation of the estimates by interpolation, the assessment was made by MBE and RMSE statistical indicators. The application of Lagrange interpolating generated the following results: underestimation of 0.27% (MBE = -1.83 W/m2) and scattering of 0.51% (RMSE = 3.48 W/m2).

Estimativas da radiação difusa horária incidente em superfícies inclinadas com base na transmissividade atmosférica

Evaluated statistical equations estimates (based on radiometric fractions) of the hourly diffuse radiation incident on inclined surfaces for the North to 12.85, 22.85 and 32.85°, the climate and geographical conditions of Botucatu, SP. The database was generated from April/1998 to December/2007, with measures in the three tilted surfaces in different periods, but concomitant to the horizontal plane. In the validation of the equations were used indicative statistics MBE (mean absolute error), RMSE (square root mean square error) and index adjustment (d) for three inclinations and conditions of sky coverage. The increased angle of inclination of the surface led to increased scattering of hourly values for the coefficient of atmospheric transmissivity of diffuse radiation for inclined and horizontal surfaces. Estimates of diffuse radiation on the basis of hourly tilted horizontal global radiation occur for quadratic polynomial models, which adjust K'Dβ maximum values of between 0.14 and 0.30 for winter and summer when KTH varies between 0.40 and 0.66, indicating that energy, the highest values of diffuse radiation occur in partly cloudy sky conditions and / or partially open. The increase in atmospheric transmissivity decreases the performance of annual and monthly equations at all inclinations.

Modelagem da irradiação direta na incidência normal em Botucatu: aprendizado de máquina, estatístico e linke

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Estimativa da irradiação solar global pelo método de Angstrom-Prescott e técnicas de aprendizado de máquinas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Nanoestruturas de GaN crescidas pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural, morphological, and magnetic characterization of In1-xMnxAs quantum dots grown by molecular beam epitaxy

In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In1-xMnxAs quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In1-xMnxAs QDs were grown on top of a non-magnetic In0.4Ga0.6As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In1-xMnxAs QDs. For particular conditions, such as surface morphology and growth conditions, the In1-xMnxAs QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2K. We found that the magnetic moment axis changes from [110] in In1-xMnxAs over GaAs to [1-10] for the ordered In1-xMnxAs grown over GaAs template. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745904]

Magnetic properties of selected 3d- and 4f-systems on alpha-Al 2 O 3 substrates

In this work the growth and the magnetic properties of the transition metals molybdenum, niobium, and iron and of the highly-magnetostrictive C15 Laves phases of the RFe2 compounds (R: Rare earth metals: here Tb, Dy, and Tb{0.3}Dy{0.7} deposited on alpha-Al2O3 (sapphire) substrates are analyzed. Next to (11-20) (a-plane) oriented sapphire substrates mainly (10-10) (m-plane) oriented substrates were used. These show a pronounced facetting after high temperature annealing in air. Atomic force microscopy (AFM) measurements reveal a dependence of the height, width, and angle of the facets with the annealing temperature. The observed deviations of the facet angles with respect to the theoretical values of the sapphire (10-1-2) and (10-11) surfaces are explained by cross section high resolution transmission electron microscopy (HR-TEM) measurements. These show the plain formation of the (10-11) surface while the second, energy reduced (10-1-2) facet has a curved shape given by atomic steps of (10-1-2) layers and is formed completely solely at the facet ridges and valleys. Thin films of Mo and Nb, respectively, deposited by means of molecular beam epitaxy (MBE) reveal a non-twinned, (211)-oriented epitaxial growth as well on non-faceted as on faceted sapphire m-plane, as was shown by X-Ray and TEM evaluations. In the case of faceted sapphire the two bcc crystals overgrow the facets homogeneously. Here, the bcc (111) surface is nearly parallel to the sapphire (10-11) facet and the Mo/Nb (100) surface is nearly parallel to the sapphire (10-1-2) surface. (211)-oriented Nb templates on sapphire m-plane can be used for the non-twinned, (211)-oriented growth of RFe2 films by means of MBE. Again, the quality of the RFe2 films grown on faceted sapphire is almost equal to films on the non-faceted substrate. For comparison thin RFe2 films of the established (110) and (111) orientation were prepared. Magnetic and magnetoelastic measurements performed in a self designed setup reveal a high quality of the samples. No difference between samples with undulated and flat morphology can be observed. In addition to the preparation of covering, undulating thin films on faceted sapphire m-plane nanoscopic structures of Nb and Fe were prepared by shallow incidence MBE. The formation of the nanostructures can be explained by a shadowing of the atomic beam due to the facets in addition to de-wetting effects of the metals on the heated sapphire surface. Accordingly, the nanostructures form at the facet ridges and overgrow them. The morphology of the structures can be varied by deposition conditions as was shown for Fe. The shape of the structures vary from pearl-necklet strung spherical nanodots with a diameter of a few 10 nm to oval nanodots of a few 100 nm length to continuous nanowires. Magnetization measurements reveal uniaxial magnetic anisotropy with the easy axis of magnetization parallel to the facet ridges. The shape of the hysteresis is depending on the morphology of the structures. The magnetization reversal processes of the spherical and oval nanodots were simulated by micromagnetic modelling and can be explained by the formation of magnetic vortices.

Electronic transport in the heavy fermion superconductors UPd 2 Al 3 and UNi 2 Al 3

This work addresses the electronical properties of the superconductors UPd2Al3 and UNi2Al3 on the basis of thin film experiments. These isotructural compounds are ideal candiates to study the interplay of magnetism and superconductivity due to the differences of their magnetically ordered states, as well as the experimental evidence for a magnetic pairing mechanism in UPd2Al3. Epitaxial thin film samples of UPd2Al3 and UNi2Al3 were prepared using UHV Molecular Beam Epitaxy (MBE). For UPd2Al3, the change of the growth direction from the intrinsic (001) to epitaxial (100) was predicted and sucessfully demonstrated using LaAlO3 substrates cut in (110) direction. With optimized deposition process parameters for UPd2Al3 (100) on LaAlO3 (110) superconducting samples with critical temperatures up to Tc = 1.75K were obtained. UPd2Al3-AlOx-Ag mesa junctions with superconducting base electrode were prepared and shown to be in the tunneling regime. However, no signatures of a superconducting density of states were observed in the tunneling spectra. The resistive superconducting transition was probed for a possible dependence on the current direction. In contrast to UNi2Al3, the existence of such feature was excluded in UPd2Al3 (100) thin films. The second focus of this work is the dependence of the resisitive transition in UNi2Al3 (100) thin films on the current direction. The experimental fact that the resisitive transition occurs at slightly higher temperatures for I║a than for I║c can be explained within a model of two weakly coupled superconducting bands. Evidence is presented for the key assumption of the two-band model, namely that transport in and out of the ab-plane is generated on different, weakly coupled parts of the Fermi surface. Main indications are the angle dependence of the superconducting transition and the dependence of the upper critical field Bc2 on current and field orientation. Additionally, several possible alternative explanations for the directional splitting of the transition are excluded in this work. An origin due to scattering on crystal defects or impurities is ruled out, likewise a relation to ohmic heating or vortex dynamics. The shift of the transition temperature as function of the current density was found to behave as predicted by the Ginzburg-Landau theory for critical current depairing, which plays a significant role in the two-band model. In conclusion, the directional splitting of the resisitive transition has to be regarded an intrinsic and unique property of UNi2Al3 up to now. Therefore, UNi2Al3 is proposed as a role model for weakly coupled multiband superconductivity. Magnetoresistance in the normalconducting state was measured for UPd2Al3 and UNi2Al3. For UNi2Al3, a negative contribution was observed close to the antiferromagnetic ordering temperature TN only for I║a, which can be associated to reduced spin-disorder scattering. In agreement with previous results it is concluded that the magnetic moments have to be attributed to the same part of the Fermi surface which generates transport in the ab-plane.

Unconventional superconductivity of the heavy fermion compound UNi 2 Al 3

The heavy fermion compound UNi2Al3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi2Al3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi2Al3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi2Al3 were grown on single crystalline YAlO3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic x-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi2Al3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi2Al3. The initial slope of the upper critical field H′c2(T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi2Al3 directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi2Al3 were ever observed. It is assumed that the absence of UNi2Al3 gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi2Al3 was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi2Al3. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible.

Proprietà ottiche di film sottili di germanio nanoporoso

In questa tesi viene presa in esame una classe di materiali semiconduttori caratterizzata dalla presenza di una struttura nanoporosa in superficie. L’analisi è stata svolta tramite surface photovoltage spectroscopy (SPS) su cinque film di Ge realizzati in condizioni diverse, sfruttando due tecniche di impiantazione ionica (MBE e Sputtering). Valutando il valore in energia e l’ampiezza del picco della curva SPV che si ottiene, sarà possibile studiare come vengono modificate alcune proprietà elettriche e strutturali del Ge al variare della geometria e della disposizione dei nanopori. I risultati ottenuti mettono in risalto le potenzialità di questo nuovo tipo di materiale per realizzare e migliorare applicazioni come sensori, catalizzatori e pannelli fotovoltaici.

(Table 3) Air temperatures, and snow and ice characteristics of fresh and brackish water lakes in the Northwest Territories, Canada

The algorithms designed to estimate snow water equivalent (SWE) using passive microwave measurements falter in lake-rich high-latitude environments due to the emission properties of ice covered lakes on low frequency measurements. Microwave emission models have been used to simulate brightness temperatures (Tbs) for snowpack characteristics in terrestrial environments but cannot be applied to snow on lakes because of the differing subsurface emissivities and scattering matrices present in ice. This paper examines the performance of a modified version of the Helsinki University of Technology (HUT) snow emission model that incorporates microwave emission from lake ice and sub-ice water. Inputs to the HUT model include measurements collected over brackish and freshwater lakes north of Inuvik, Northwest Territories, Canada in April 2008, consisting of snowpack (depth, density, and snow water equivalent) and lake ice (thickness and ice type). Coincident airborne radiometer measurements at a resolution of 80x100 m were used as ground-truth to evaluate the simulations. The results indicate that subsurface media are simulated best when utilizing a modeled effective grain size and a 1 mm RMS surface roughness at the ice/water interface compared to using measured grain size and a flat Fresnel reflective surface as input. Simulations at 37 GHz (vertical polarization) produce the best results compared to airborne Tbs, with a Root Mean Square Error (RMSE) of 6.2 K and 7.9 K, as well as Mean Bias Errors (MBEs) of -8.4 K and -8.8 K for brackish and freshwater sites respectively. Freshwater simulations at 6.9 and 19 GHz H exhibited low RMSE (10.53 and 6.15 K respectively) and MBE (-5.37 and 8.36 K respectively) but did not accurately simulate Tb variability (R= -0.15 and 0.01 respectively). Over brackish water, 6.9 GHz simulations had poor agreement with airborne Tbs, while 19 GHz V exhibited a low RMSE (6.15 K), MBE (-4.52 K) and improved relative agreement to airborne measurements (R = 0.47). Salinity considerations reduced 6.9 GHz errors substantially, with a drop in RMSE from 51.48 K and 57.18 K for H and V polarizations respectively, to 26.2 K and 31.6 K, although Tb variability was not well simulated. With best results at 37 GHz, HUT simulations exhibit the potential to track Tb evolution, and therefore SWE through the winter season.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted

Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2].

Evidence of charge carrier number fluctuations in InN thin films?

Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been reported that this material exhibits strong surface charge accumulation which may depend on the type of surface. Current investigations are conducted in order to explain the mechanisms which govern such a behavior and to look for ways of avoiding it and/or finding applications that may use such an effect. In this framework, low frequency noise measurements have been performed at different temperatures on patterned MBE grown InN layers. The evolution of the 1/f noise level with temperature in the 77 K-300 K range is consistent with carrier number fluctuations thus indicating surface mechanisms: the surface charge accumulation is confirmed by the noise measurements.