Compact holographic optical interconnections using nematic liquid crystal spatial light modulators

In a fibre-optic communication network, the wavelength-division multiplexing (WDM) technique enables an expansion of the data-carrying capacity of optical fibres. This can be achieved by transmitting different channels on a single optical fibre, with each channel modulating a different wavelength. In order to access and manipulate these channels at a node of the network, a compact holographic optical switch is designed, modelled, and constructed. The structure of such a switch consists of a series of optical components which are used to collimate the beam from the input, de-multiplex each individual wavelength into separated channels, manipulate the separated channels, and reshape the beam to the output. A spatial light modulator (SLM) is crucial in this system, offering control and flexibility at the channel manipulation stage, and providing the ability to redirect light into the desired output fibre. This is achieved by the use of a 2-D analogue phase computer generated hologram (CGH) based on liquid crystal on silicon (LCOS) technology. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Investigation of low nanosecond light-matter interaction mechanisms

Laser ablation of solid Silicon targets using pulsed Yb fiber lasers of pulse duration 1.5-400 ns Yb fiber lasers is studied in this work. Material responses of a range of pulse envelopes are examined including front peak (FP) and double peak (DP) pulses. Theoretical models for the interactions are examined and qualitative explanations of material response experiments are presented.

Design of a compact reconfigurable optical interconnection using nematic liquid crystal spatial light modulator

The wavelength-division multiplexing (WDM) has been proposed as a promising technology to efficiently use the available bandwidth of a single optical fibre. This can be achieved by transmitting different channels on the optical fibre with each channel modulating a different wavelength. The aim of this paper is to propose a compact design (35 mm×65 mm) of a reconfigurable holographic optical switch in order to access and manipulate 4 channels at a node of a fibre-optic communication network. A vital component of such a switch is a nematic liquid crystal spatial light modulator offering control and flexibility at the channel manipulation stage and providing the ability to redirect light into the desired output fibre. This is achieved by the use of a 2-D analogue phase computer generated hologram (CGH) based on liquid crystal on silicon (LCOS) technology. © 2012 SPIE.

Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect

We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V.

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

New approaches for enhancing light emission from Er-based materials and devices

In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron-hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 μm owing to the efficient reduction of the defect density. © 2008 Elsevier B.V. All rights reserved.