Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition

A new alternative method to grow the relaxed Ge0.24Si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Angstrom Ge0.24Si0.76 layer was first grown on a Si(100) substrate. Then a 500-Angstrom Si layer and a subsequent 5000-Angstrom Ge0.24Si0.76 overlayer followed. All these three layers were grown at 600 degrees C. After being removed from the growth system to air, the sample was first annealed at 850 degrees C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Angstrom Ge0.24Si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Angstrom Ge0.24Si0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.

Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction

The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

impossible differential cryptanalysis of reduced-round aria and camellia

This paper studies the security of the block ciphers ARIA and Camellia against impossible differential cryptanalysis. Our work improves the best impossible differential cryptanalysis of ARIA and Camellia known so far. The designers of ARIA expected no impossible differentials exist for 4-round ARIA. However, we found some nontrivial 4-round impossible differentials, which may lead to a possible attack on 6-round ARIA. Moreover, we found some nontrivial 8-round impossible differentials for Camellia, whereas only 7-round impossible differentials were previously known. By using the 8-round impossible differentials, we presented an attack on 12-round Camellia without FL/FL 1 layers.

collision attack on reduced-round camellia

IEEE Computer Society

PHOTOLUMINESCENCE STUDIES ON VERY HIGH-DENSITY 2-DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC MODULATION-DOPED QUANTUM-WELLS

We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si delta-doped GaAs/In0.18Ga0.82As/Al0.25Ga0.75As quantum wells (N(s) = 4.24 x 10(12) cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808 eV were observed, which are attributed to the subband excition emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5 meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.

Design of a Frequency Divider with Reduced Complexity Based on a Resonant Tunneling Diode

A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider. The design is discussed in detail and the performance of the circuit is verified using SPICE. Relying on the nonlinear characteristics of RTD, we reduced the number of components used in our DFF circuit to only half of that required using conventional CMOS SCFL technology.

In situ annealing during the growth of relaxed SiGe

In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2).