An analysis on the possibility of using capacitors of a three-level capacitor clamped inverter as power smoothing elements for wind power systems

This paper presents a new direct integration scheme for supercapacitors that are used to mitigate short term power fluctuations in wind power systems. The idea is to replace ordinary capacitors of a 3-level flying capacitor inverter by supercapacitors and operate them under variable voltage conditions. This approach eliminates the need of interfacing dc-dc converters for supercapacitor integration and thus considerably improves the overall efficiency. However, the major problem of this unique system is the change of supercapacitor voltages. An analysis on the effects of these voltage variations are presented. A space vector modulation method, built from the scratch, is proposed to generate undistorted current even in the presence of dynamic changes in supercapacitor voltages. A supercapacitor voltage equalisation algorithm is also proposed. Furthermore, resistive behavior of supercapacitors at high frequencies and the need for a low pass filter are highlighted. Simulation results are presented to verify the efficacy of the proposed system in suppressing short term wind power fluctuations.

Load-Commutated SCR Current-Source-Inverter-Fed Induction Motor Drive With Sinusoidal Motor Voltage and Current

Current source inverter (CSI) is an attractive solution in high-power drives. The conventional gate turn-off thyristor (GTO) based CSI-fed induction motor drives suffer from drawbacks such as low-frequency torque pulsation, harmonic heating, and unstable operation at low-speed ranges. These drawbacks can be overcome by connecting a current-controlled voltage source inverter (VSI) across the motor terminal replacing the bulky ac capacitors. The VSI provides the harmonic currents, which results in sinusoidal motor voltage and current even with the CSI switching at fundamental frequency. This paper proposes a CSI-fed induction motor drive scheme where GTOs are replaced by thyristors in the CSI without any external circuit to assist the turning off of the thyristors. Here, the current-controlled VSI, connected in shunt, is designed to supply the volt ampere reactive requirement of the induction motor, and the CSI is made to operate in leading power factor mode such that the thyristors in the CSI are autosequentially turned off. The resulting drive will be able to feed medium-voltage, high-power induction motors directly. A sensorless vector-controlled CSI drive based on the proposed configuration is developed. The experimental results from a 5 hp prototype are presented. Experimental results show that the proposed drive has stable operation throughout the operating range of speeds.

Impulse Voltage Breakdown Characteristics of Point-Plane Gaps at Low Pressures

Practical applications of vacuum as an insulator necessitated determining the low-pressure breakdown characteristics of long gap lengths of a point-plane electrode system. The breakdown voltage has been found to vary as the square root of the gap length. Further, with the point electrode as the anode, the values of the breakdown voltages obtained have been found to be larger than those obtained with a plane-parallel electrode system at a corresponding gap length. By applying the theory of the anode heating mechanism as the cause for breakdown, the results have been justified, and by utilizing a field efficiency factor which is the ratio of the average to maximum field, an empirical criterion has been developed. This criterion helps in calculating the breakdown voltage of a nonuniform gap system by the knowledge of the breakdown voltage of a plane-parallel electrode system.

Impulse-voltage breakdown characteristics of large gaps at low pressures

A study of the gap breakdown voltage characteristic at a low pressure of 7×10-5 Torr with a standard (1/50)-μsec impulse-voltage wave reveals an agreement with the criterion Vb=Cd0.5 suggested by Cranberg. Voltage-time-to-breakdown characteristics has also been determined. From these studies, it is concluded that impulse breakdown in vacuum is initiated by an electron current heating an anode spot and thereby liberating a clump which causes breakdown.

Starting scheme for load commutated inverter-fed wound field synchronous machine using an auxiliary low-power voltage source inverter

Conventional thyristor-based load commutated inverter (LCI)-fed wound field synchronous machine operates only above a minimum speed that is necessary to develop enough back emf to ensure commutation. The drive is started and brought up to a speed of around 10-15% by a complex `dc link current pulsing' technique. During this process, the drive have problems such as pulsating torque, insufficient average starting torque, longer starting time, etc. In this regard a simple starting and low-speed operation scheme, by employing an auxiliary low-power voltage source inverter (VSI) between the LCI and the machine terminals, is presented in this study. The drive is started and brought up to a low speed of around 15% using the VSI alone with field oriented control. The complete control is then smoothly and dynamically transferred to the conventional LCI control. After the control transfer, the VSI is turned off and physically disconnected from the main circuit. The advantages of this scheme are smooth starting, complete control of torque and flux at starting and low speeds, less starting time, stable operation, etc. The voltage rating of the required VSI is very low of the order of 10-15%, whereas the current rating is dependent on the starting torque requirement of the load. The experimental results from a 15.8 hp LCI-fed wound field synchronous machine are given to demonstrate the scheme.

A mostly-digital analog scan-out chain for low bandwidth voltage measurement for analog IP test

A method of precise measurement of on-chip analog voltages in a mostly-digital manner, with minimal overhead, is presented. A pair of clock signals is routed to the node of an analog voltage. This analog voltage controls the delay between this pair of clock signals, which is then measured in an all-digital manner using the technique of sub-sampling. This sub-sampling technique, having measurement time and accuracy trade-off, is well suited for low bandwidth signals. This concept is validated by designing delay cells, using current starved inverters in UMC 130nm CMOS process. Sub-mV accuracy is demonstrated for a measurement time of few seconds.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric

We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu2O3 dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/mu m(2)), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V-2 at 100 kHz), and argon anneal results in low leakage current density (3.2 x 10(-8) A/cm(2) at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.

Field Emission with Ultra low Turn On Voltage from Metal Decorated Carbon Nanotubes

A simple and scalable method of decorating 3D-carbon nanotube (CNT) forest with metal particles has been developed. The results observed in aluminum (AI) decorated CNTs and copper (Cu) decorated CNTs on silicon (Si) and Inconel are compared with undecorated samples. A significant improvement in the field emission characteristics of the cold cathode was observed with ultralow turn on voltage (E-to similar to 0.1 V/mu m) due to decoration of CNTs with metal nanoparticles. Contact resistance between the CNTs and the substrate has also been reduced to a large extent, allowing us to get stable emission for longer duration without any current degradation, thereby providing a possibility of their use in vacuum microelectronic devices.

On-line Estimation of Fundamental and Ripple Components of Line Currents in a Voltage-Source Inverter Operated at Low Switching Frequency

High-power voltage-source inverters (VSI) are often switched at low frequencies due to switching loss constraints. Numerous low-switching-frequency PWM techniques have been reported, which are quite successful in reducing the total harmonic distortion under open-loop conditions at such low operating frequencies. However, the line current still contains low-frequency components (though of reduced amplitudes), which are fed back to the current loop controller during closed-loop operation. Since the harmonic frequencies are quite low and are not much higher than the bandwidth of the current loop, these are amplified by the current controller, causing oscillations and instability. Hence, only the fundamental current should be fed back. Filtering out these harmonics from the measured current (before feeding back) leads to phase shift and attenuation of the fundamental component, while not eliminating the harmonics totally. This paper proposes a method for on-line extraction of the fundamental current in induction motor drives, modulated with low-switching-frequency PWM. The proposed method is validated through simulations on MATLAB/Simulink. Further, the proposed algorithm is implemented on Cyclone FPGA based controller board. Experimental results are presented for an R-L load.

High-Performance Stacked TiO2-ZrO2 and Si-doped ZrO2 Metal-Insulator-Metal Capacitors

Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-ZrO2 (TiO2/ZrO2 and ZrO2/TiO2) and Si-doped ZrO2 (TiO2/Si-doped ZrO2) dielectrics. High capacitance densities (> 42 fF/mu m(2)), low leakage current densities (< 5 x 10(-7) A/cm(2) at -1 V), and sub-nm EOT (< 0.8 nm) have been achieved. The effects of constant voltage stress on the device characteristics is studied. The structural analysis of the samples is performed by X-ray diffraction measurements, and this is correlated to the electrical characteristics of the devices. The surface chemical states of the films are analyzed through X-ray photoelectron spectroscopy measurements. The doped-dielectric stack (TiO2/Si-doped ZrO2) helps to reduce leakage current density and improve reliability, with a marginal reduction in capacitance density; compared to their undoped counterparts (TiO2/ZrO2 and ZrO2/TiO2). We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.