Slow peaking and low-gain designs for global stabilization of nonlinear systems

This paper presents an analysis of the slow-peaking phenomenon, a pitfall of low-gain designs that imposes basic limitations to large regions of attraction in nonlinear control systems. The phenomenon is best understood on a chain of integrators perturbed by a vector field up(x, u) that satisfies p(x, 0) = 0. Because small controls (or low-gain designs) are sufficient to stabilize the unperturbed chain of integrators, it may seem that smaller controls, which attenuate the perturbation up(x, u) in a large compact set, can be employed to achieve larger regions of attraction. This intuition is false, however, and peaking may cause a loss of global controllability unless severe growth restrictions are imposed on p(x, u). These growth restrictions are expressed as a higher order condition with respect to a particular weighted dilation related to the peaking exponents of the nominal system. When this higher order condition is satisfied, an explicit control law is derived that achieves global asymptotic stability of x = 0. This stabilization result is extended to more general cascade nonlinear systems in which the perturbation p(x, v) v, v = (ξ, u) T, contains the state ξ and the control u of a stabilizable subsystem ξ = a(ξ, u). As an illustration, a control law is derived that achieves global stabilization of the frictionless ball-and-beam model.

Instability of the steady-state regime of generation in laser diodes with a broad gain spectrum

The laser-diode parameters at which the steady-state regime of generation becomes unstable are analyzed within the framework of the mode-locking model. The crucial role of the transverse inhomogeneity of the field, pumping intensity, and spectrum width in developing the instabilities of the steady-state regime of generation is demonstrated. The calculated values of the instability threshold are shown to be consistent with the experimental results. © 2008 Springer Science+Business Media, Inc.

Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron - hole pairs on a time scale much longer than the characteristic polarisation relaxation time T2. A criterion of the superradiance generation is the condition acmT2 > 1, where α is the gain coefficient and cm is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.

Sonar gain control in echolocating finless porpoises (Neophocaena phocaenoides) in an open water (L)

Source levels of echolocating free-ranging Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis) were calculated using a range estimated by measuring the time delays of the signals via the surface and bottom reflection paths to the hydrophone, relative to the direct signal. Peak-to-peak source levels for finless porpoise were from 163.7 to 185.6 dB re:1 mu Pa. The source levels are highly range dependent and varied approximately as a function of the one-way transmission loss for signals traveling from the animals to the hydrophone. (c) 2006 Acoustical Society of America.

System Dynamics and Scenario Planning: Implementation Challenges

In this paper we discuss key implementation challenges of a systems approach that combines System Dynamics, Scenario Planning and Qualitative Data Analysis methods in tackling a complex problem. We present the methods and the underlying framework. We then detail the main difficulties encountered in designing and planning the Scenario Planning workshop and how they were overcome, such as finding and involving the stakeholders and customising the process to fit within timing constraints. After presenting the results from this application, we argue that the consultants or system analysts need to engage with the stakeholders as process facilitators and not as system experts in order to gain commitment, trust and to improve information sharing. They also need be ready to adapt their tools and processes as well as their own thinking for more effective complex problem solving.

Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the QD SOAs. The obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. The gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. The fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of QDs, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.