Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

Experimental study of Electro-elasto-capillarity:Electric field driven unwrapping of water drop with elastic film

<正>Elasto-capillarity has drawn much of scientists' attention in the past several years.By inducing electric field into the droplet,the encapsulation and release procedure can be realized and we call it electro-elasto-capillarity(EEC).EEC offers a novel method for micro-scale actuation and self-assemble of moveable devices.It also provides a good candidate for the drug delivery at micro- or nanoscale.

Electric-dipole transitions in 165Er

High-spin states of 165Er were studied using the 160Gd(9Be, 4n)reaction at beam energies of 42 and 45 MeV. The previously known bands based on the ν5/2-[523] and ν5/2+[642] configurations have been extended to high-spin states. Electric-dipole transitions linking these two opposite parity bands were observed. Relatively large B(E1) values have been extracted experimentally and were attributed to octupole softness.

Experimental study on the electric-sweep scanner and ion beam emittance of electron cyclotron resonance ion source

With a latest developed electric-sweep scanner system, we have done a lot of experiments for studying this scanner system and ion beam emittance of electron cyclotron resonance (ECR) ion source. The electric-sweep scanner system was installed on the beam line of Lanzhou electron resonance ion source No. 3 experimental platform of Institute of Modem Physics. The repetition experiments have proven that the system is a relatively dependable and reliable emittance scanner, and its experiment error is about 10%. We have studied the influences of the major parameters of ECR ion source on the extracted ion beam emittance. The typical results of the experiments and the conclusions are presented in this article.

Low conductance injection tubes for storage cell targets

The effect of adding internal fins to the injection tube of a storage cell target filled with a polarized atomic beam source has been studied. The tube conductance and the atomic beam intensity at the exit of the injection tube have been measured, observing an unexpectedly large beam loss. Simulations of the atomic beam reproduce the observed attenuation only when the non-zero azimuthal component of the atom's velocity is taken into account.

Isospin-symmetry breaking effects on the strange electric and magnetic form factors of the nucleon

We examine the electric and magnetic strange form factors of the nucleon in the pseudoscalar-vector SU(3) Skyrme model, with special emphasis on the effects of isospin symmetry breaking (ISB). It is found that ISB has a nontrivial effect on the strange vector form factors of the nucleon and its contribution to the nucleon strangeness is significantly larger than one might naively expect. Our calculations and discussions may be of some significance for the experimental extraction of the authentic strangeness.