Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

Acoustic properties of microperforated panels and their optimizatión by simulated annealing

This thesis investigates the acoustic properties of microperforated panels as an alternative to passive noise control. The first chapters are devoted to the review of analytical models to obtain the acoustic impedance and absorption coefficient of perforated panels. The use of panels perforated with circular holes or with slits is discussed. The theoretical models are presented and some modifications are proposed to improve the modeling of the physical phenomena occurring at the perforations of the panels. The absorption band is widened through the use of multiple layer microperforated panels and/or the combination of a millimetric panel with a porous layer that can be a fibrous material or a nylon mesh. A commercial micrometric mesh downstream a millimetric panel is proposed as a very efficient and low cost solution for controlling noise in reduced spaces. The simulated annealing algorithm is used in order to optimize the panel construction to provide a maximum of absorption in a determined wide band frequency range. Experiments are carried out at normal sound incidence and plane waves. One example is shown for a double layer microperforated panel subjected to grazing flow. A good agreement is achieved between the theory and the experiments. RESUMEN En esta tesis se investigan las propiedades acústicas de paneles micro perforados como una alternativa al control pasivo del ruido. Los primeros capítulos están dedicados a la revisión de los modelos de análisis para obtener la impedancia acústica y el coeficiente de absorción de los paneles perforados. El uso de paneles perforados con agujeros circulares o con ranuras es discutido. Se presentan diferentes modelos y se proponen algunas modificaciones para mejorar la modelización de los fenómenos físicos que ocurren en las perforaciones. La banda de absorción se ensancha a través del uso de capas múltiples de paneles micro perforados y/o la combinación de un panel de perforaciones milimétricas combinado con una capa porosa que puede ser un material fibroso o una malla de nylon. Se propone el uso de una malla micrométrica detrás de un panel milimétrico como una solución económica y eficiente para el control del ruido en espacios reducidos. El algoritmo de recocido simulado se utiliza con el fin de optimizar la construcción de paneles micro perforados para proporcionar un máximo de absorción en una banda determinada frecuencias. Los experimentos se llevan a cabo en la incidencia normal de sonido y ondas planas. Se muestra un ejemplo de panel micro perforado de doble capa sometido a flujo rasante. Se consigue un buen acuerdo entre la teoría y los experimentos.