Diseño de circuitos integrados de RF para un receptor WLAN en la banda de 5GHz sobre una tecnología de silicio de bajo coste

Programa de doctorado: Ingeniería de Telecomunicación Avanzada

Inductores integrados planos sobre tecnologías de silicio

[ES] Las tecnologías de fabricación de circuitos integrados basadas en Silicio no han sido muy utilizadas en aplicaciones analógicas a frecuencias milimétricas, sin embargo son la alternativa para disminuir los costes. Las prestaciones de estos circuitos integrados son muy dependientes de la calidad de los elementos de circuito utilizados. Están disponibles transistores cuyas frecuencias de corte alcanzan los 60 gigahertzios., así como resistencias y capacitares capaces de operar en intervalos de frecuencia de unos giga-hertzios, sin embargo no ocurre así con los inductores. En este artículo se expone un análisis práctico de los aspectos fundamentales relacionados con el funcionamiento de los inductores integrados sobre silicio

4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.

Synthesis and characterization of implants for bone substitutions made of biomedical apatites containing silicon

In the last decades the development of bone substitutes characterized by a superior biomimetism has become of particular interest, owing to the increasing economic and societal impact of the bone diseases. In the present work of research the development of bone substitutes characterized by improved biomimetism, has been faced in a chemical, structural and morphological perspective. From a chemical point of view, it has been developed the synthesis of hydroxyapatite powders, exhibiting multiple ionic substitutions in both cationic and anionic sites, so to simulate the chemical composition of the natural bone. Particular emphasis has been given to the effect of silicon on the chemical-physical and solubility properties of the obtained hydroxyapatites. From a structural point of view, it has been developed the synthesis of ceramic composite materials, based on hydroxyapatite and calcium silicates, employed both as a reinforcing phase, to raise the mechanical strength of the composite compared to hydroxyapatite, and as a bioactive phase, able to increase the bioactivity properties of the whole ceramic. Finally the unique morphological features of the bone were mimicked by taking inspiration by Nature, so that native wood structures were treated in chemical and thermal way to obtain hydroxyapatite porous materials characterized by the same morphology as the native wood. The results obtained in the present work were positive in all the three different areas of investigation, so to cover the three different aspects of biomimetism, chemical, structural and morphological. Anyway, only at the convergence of the three different fields it is possible to find out the best solutions to develop the ideal bone-like scaffold. Thus, the future activity should be devoted to solve the problems at the borderline between the different research lines, which hamper this convergence and in consequence, the achievement of a bone scaffold able to mimic the various aspects exhibited by the bone tissue

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Sistemi multistrato per il miglioramento del comportamento tribologico dell'acciaio inossidabile AISI 316L: cementazione a bassa temperatura seguita da deposizione PACVD di carbonio amorfo (a-C:H)

Gli acciai inossidabili austenitici presentano ottime caratteristiche che li rendono ideali in tutti quei settori in cui è richiesta un’elevata resistenza alla corrosione associata a caratteristiche estetiche e funzionali. L’acciaio AISI 316L risulta essere uno dei più studiati ed utilizzati, specie nell’industria alimentare e farmaceutica, dove leapparecchiature debbono poter essere sottoposte ad aggressive procedure di sanificazione. Tuttavia, la modesta resistenza meccanica e la bassa durezza superficiale di questo acciaio determinano un comportamento non soddisfacente dal punto di vista dell’usura da strisciamento in assenza di lubrificanti, situazione che si verifica sovente in molti macchinari dedicati a queste industrie. Tra le varie soluzioni, studiate per migliorare il suo comportamento tribologico, la cementazione a bassa temperatura (LowTemperature Carburizing, LTC) seguita dalla deposizione PE-CVD (Plasma-Enhanced Chemical Vapour Deposition) di un rivestimento di carbonio amorfo idrogenato (a-C:H), sembra essere molto promettente. In questo lavoro vengono analizzate le caratteristiche tribologiche dell’acciaio AISI 316L cementato a bassa temperatura e rivestito di carbonio amorfo idrogenato, tramite prove tribologiche di strisciamento non lubrificato in geometria di contatto pattino su cilindro. Sono state verificate, inoltre, le caratteristiche microstrutturali e meccaniche superficiali del rivestimento multistrato LTC/a-C:H tramite osservazioni morfologiche/topografiche, analisi in spettroscopia micro-Raman e misure di indentazione strumentata sulle superfici rivestite, seguite da analisi metallografia e misura dei profili di microdurezza Vickers in sezione trasversale. I risultati ottenuti dimostrano che, ai fini di contenere l’effetto negativo legato all’aumento di rugosità dovuto al trattamento LTC, è opportuno effettuare una lucidatura precedente al trattamento stesso, poiché effettuandola successivamente si rischierebbe dicomprometterne lo strato efficace. Inoltre, si osserva come il trattamento LTC incrementi le capacità del substrato di supportare il rivestimento a-C:H, portando ad un miglioramento delle prestazioni tribologiche, nelle prove di strisciamento non lubrificato. Infine, si dimostra come l’utilizzo di un rivestimento a base di carbonio amorfo idrogenato adeguatamente supportato permetta una riduzione dell’attrito (di oltre cinque volte) e dell’usura (di circa dieci ordini di grandezza) rispetto ai corrispondenti materiali non rivestiti.

The incomplete ionization of substitutional dopants in Silicon Carbide

This thesis analyzes theoretically and computationally the phenomenon of partial ionization of the substitutional dopants in Silicon Carbide at thermal equilibrium. It is based on the solution of the charge neutrality equation and takes into account the following phenomena: several energy levels in the bandgap; Fermi-Dirac statistics for free carriers; screening effects on the dopant ionization energies; the formation of impurity bands. A self-consistent model and a corresponding simulation software have been realized. A preliminary comparison of our calculations with existing experimental results is carried out.

Silicon-containing block copolymers with well-defined, branched architectures

In the past decade, block copolymers (BCPs) have attracted increasing scientific and technological interest because of their inherent capability to spontaneously self-assemble into ordered arrays of nanostructures. The importance of nanostructures in a number of applications has fostered the need for well-defined, complex macromolecular architectures. In this thesis, the influence of macromolecular architecture on the bulk morphologies of novel linear-hyperbranched and linear brush-like diblock copolymer structure is investigated. An innovative, generally applicable strategy for the preparation of these defined diblock copolymers, consisting of linear polystyrene and branched polycarbosilane blocks, is demonstrated. Furthermore, complete characterization and solid-state morphological studies are provided. Finally, the concept is extended to linear-hyperbrached and linear brush-like polyalkoxysilanes. A shift of the classical phase boundaries to higher PS weight fractions as well as the appearance of new morphologies confirms the dramatic effect that polymer topology has on the morphology of BCPs.

Sviluppo, ottimizzazione delle prestazioni e caratterizzazione di materiali compositi a matrice amorfa

Durante l'attività di ricerca sono stati sviluppati tre progetti legati allo sviluppo e ottimizzazione di materiali compositi. In particolare, il primo anno, siamo andati a produrre materiali ceramici ultrarefrattari tenacizzati con fibre di carburo di silicio, riuscendo a migliorare il ciclo produttivo e ottenendo un materiale ottimizzato. Durante il secondo anno di attività ci siamo concentrati nello sviluppo di resine epossidiche rinforzate con particelle di elastomeri florurati che rappresentano un nuovo materiale non presente nel mercato utile per applicazioni meccaniche e navali. L'ultimo anno di ricerca è stato svolto presso il laboratorio materiali di Ansaldo Energia dove è stato studiato il comportamenteo di materiali per turbine a gas.

Caratterizzazione di profili estrusi in lega di magnesio ZM21 caricata con carburo di silicio

L’attività sperimentale presentata in questo elaborato è volta a conoscere le proprietà meccaniche di una lega di magnesio rinforzata con particelle ceramiche (Carburo di silicio SiC). Scopo del lavoro sarà pertanto il confronto fra le proprietà meccaniche del materiale base ZM21 rispetto al materiale prodotto in Israele con rinforzo di carburo di silicio, con particolare riferimento alle proprietà a trazione, a compressione e alla distribuzione di particelle nella matrice (analisi metallografica).