Non-linear electrical response of chalcogenide glasses: Memory state phenomena

Investigations on the switching behaviour of arsenic-tellurium glasses with Ge or Al additives, yield interesting information about the dependence of switching on network rigidity, co-ordination of the constituents, glass transition & ambient temperature and glass forming ability.

Structural, thermal and electrical characterization of NdLiMo2O8 electroceramics, using impedance spectroscopy

We report electrical property of a polycrystalline NdLiMo2O8 ceramics using complex impedance analysis. The material shows temperature dependent electrical relaxation phenomena. The d.c. conductivity shows typical Arrhenius behavior, when observed as a function of temperature. The a.c. conductivity is found to obey Jonscher's universal power law. The material was prepared in powder form by a standard solid-state reaction technique. Material formation and crystallinity have been confirmed by X-ray diffraction studies. Impedance measurements have been performed over a range of temperatures and frequencies. The results have been analyzed in the complex plane formalism and suitable equivalent circuits have been proposed in different regions. The role of bulk and grain boundary effect in the overall electrical conduction process is discussed with proper justification. (C) 2011 Elsevier Ltd. All rights reserved.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Electrical switching and optical studies on amorphous GexSe35-xTe65 thin films

The electrical switching behavior of amorphous GexSe35-xTe65 thin film samples has been studied in sandwich geometry of electrodes. It is found that these samples exhibit memory switching behavior, which is similar to that of bulk Ge-Se-Te glasses. As expected, the switching voltages of GexSe35-xTe65 thin film samples are lower compared to those of bulk samples. In both thin film amorphous and bulk glassy samples, the switching voltages are found to increase with the increase in Ge concentration, which is consistent with the increase in network connectivity with the addition of higher coordinated Ge atoms. A sharp increase is seen in the composition dependence of the switching fields of amorphous GexSe35-xTe65 films above x = 21, which can be associated with the stiffness transition. Further, the optical band gap of a-GexSe35-x Te-65 thin film samples, calculated from the absorption spectra, is found to show an increasing trend with the increase in Ge concentration, which is consistent with the variation of switching fields with composition. The increase in structural cross-linking with progressive addition of 4-fold coordinated Ge atoms is one of the main reasons for the observed increase in switching fields as well as band gaps of GexSe35-xTe65 samples. (C) 2011 Elsevier B.V. All rights reserved.

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

The electrical transport behavior of n-n indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(B)) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination of A**. The Richardson constant is extracted similar to 110 A cm(-2) K(-2) using the BHI model and that is in very good agreement with the theoretical value of 112 A cm(-2) K(-2). The second model uses Gaussian statistics and by this, mean barrier height Phi(0) and A** were found to be 0.69 eV and 113 A cm(-2) K(-2), respectively.

Thermodynamic, Raman and electrical switching studies on Si15Te85-xAgx (4 <= x <= 20) glasses

We have investigated thermal properties of bulk Si15Te85-xAgx (4 <= x <= 20) glasses in detail, through alternating differential scanning calorimetry experiments. The composition dependence of thermal parameters reveal the signatures of rigidity percolation and chemical threshold at compositions x = 12 and x = 19, respectively. The stability and glass forming ability of these glasses have also been determined using the data obtained from different thermodynamic quantities and it is found that the Si15Te85-xAgx glasses in the region 12 <= x <= 17 are more stable when compared to other glasses of the same series. Further, the blueshift observed in Raman spectroscopy investigations, in the composition range 12 <= x <= 13, support the occurrence of stiffness threshold in this composition range. All Si15Te85-xAgx (4 <= x <= 20) glasses are found to exhibit memory type switching (for sample thickness 0.25 mm) in the input current range 3-9 mA. The effect of rigidity percolation and chemical thresholds on switching voltages are observed at x = 12 and 19, respectively. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682759]

Optimal placement of Distributed Generation for a projected load increase using Relative Electrical Distance approach

There is a lot of pressure on all the developed and second world countries to produce low emission power and distributed generation (DG) is found to be one of the most viable ways to achieve this. DG generally makes use of renewable energy sources like wind, micro turbines, photovoltaic, etc., which produce power with minimum green house gas emissions. While installing a DG it is important to define its size and optimal location enabling minimum network expansion and line losses. In this paper, a methodology to locate the optimal site for a DG installation, with the objective to minimize the net transmission losses, is presented. The methodology is based on the concept of relative electrical distance (RED) between the DG and the load points. This approach will help to identify the new DG location(s), without the necessity to conduct repeated power flows. To validate this methodology case studies are carried out on a 20 node, 66kV system, a part of Karnataka Transco and results are presented.

Studying the resistivity imaging of chicken tissue phantoms with different current patterns in Electrical Impedance Tomography (EIT)

A current injection pattern in Electrical Impedance Tomography (EIT) has its own current distribution profile within the domain under test. Hence, different current patterns have different sensitivity, spatial resolution and distinguishability. Image reconstruction studies with practical phantoms are essential to assess the performance of EIT systems for their validation, calibration and comparison purposes. Impedance imaging of real tissue phantoms with different current injection methods is also essential for better assessment of the biomedical EIT systems. Chicken tissue paste phantoms and chicken tissue block phantoms are developed and the resistivity image reconstruction is studied with different current injection methods. A 16-electrode array is placed inside the phantom tank and the tank is filled with chicken muscle tissue paste or chicken tissue blocks as the background mediums. Chicken fat tissue, chicken bone, air hole and nylon cylinders are used as the inhomogeneity to obtained different phantom configurations. A low magnitude low frequency constant sinusoidal current is injected at the phantom boundary with opposite and neighboring current patterns and the boundary potentials are measured. Resistivity images are reconstructed from the boundary data using EIDORS and the reconstructed images are analyzed with the contrast parameters calculated from their elemental resistivity profiles. Results show that the resistivity profiles of all the phantom domains are successfully reconstructed with a proper background resistivity and high inhomogeneity resistivity for both the current injection methods. Reconstructed images show that, for all the chicken tissue phantoms, the inhomogeneities are suitably reconstructed with both the current injection protocols though the chicken tissue block phantom and opposite method are found more suitable. It is observed that the boundary potentials of the chicken tissue block phantoms are higher than the chicken tissue paste phantom. SNR of the chicken tissue block phantoms are found comparatively more and hence the chicken tissue block phantom is found more suitable for its lower noise performance. The background noise is found less in opposite method for all the phantom configurations which yields the better resistivity images with high PCR and COC and proper IRMean and IRMax neighboring method showed higher noise level for both the chicken tissue paste phantoms and chicken tissue block phantoms with all the inhomogeneities. Opposite method is found more suitable for both the chicken tissue phantoms, and also, chicken tissue block phantoms are found more suitable compared to the chicken tissue paste phantom. (C) 2012 Elsevier Ltd. All rights reserved.

Tuning DNA-amphiphile condensate architecture with strongly binding counterions

Electrostatic self-assembly of colloidal and nanoparticles has attracted a lot of attention in recent years, since it offers the possibility of producing novel crystalline structures that have the potential to be used as advanced materials for photonic and other applications. The stoichiometry of these crystals is not constrained by charge neutrality of the two types of particles due to the presence of counterions, and hence a variety of three-dimensional structures have been observed depending on the relative sizes of the particles and their charge. Here we report structural polymorphism of two-dimensional crystals of oppositely charged linear macroions, namely DNA and self-assembled cylindrical micelles of cationic amphiphiles. Our system differs from those studied earlier in terms of the presence of a strongly binding counterion that competes with DNA to bind to the micelle. The presence of these counterions leads to novel structures of these crystals, such as a square lattice and a root 3 x root 3 superlattice of an underlying hexagonal lattice, determined from a detailed analysis of the small-angle diffraction data. These lower-dimensional equilibrium systems can play an important role in developing a deeper theoretical understanding of the stability of crystals of oppositely charged particles. Further, it should be possible to use the same design principles to fabricate structures on a longer length-scale by an appropriate choice of the two macroions.

Electrical Treeing and the Associated PD Characteristics in LDPE Nanocomposites

Treeing in low density polyethylene (LDPE) filled with alumina nanocomposite as well as unfilled LDPE samples stressed with 50 Hz ac voltage has been studied. The tree inception voltage was monitored for various samples with different nano-filler loadings and it is seen that there is an increase in tree inception voltage with filler loading in LDPE. Treeing pattern and tree growth duration for unfilled and nano-filled LDPE samples have also been studied. Different tree growth patterns as well as a slower tree growth with increase in filler loading in LDPE nanocomposites were observed. The observed slow propagation of tree growth with filler loading is attributed to the changes in the polymer crystalline morphology induced by the presence of nano-particles and the greater ability of the nanoparticles to resist discharge growth. SEM studies carried out to determine the morphology of unfilled and nano-filled LDPE showed an increase in lamellae packing in LDPE nanocomposites and this increased lamellar density leads to a reduction in the tree propagation rate. Partial discharge activities were also monitored during the electrical tree growth in both the unfilled and the nano-filled LDPE samples and were found to be significantly different. PD magnitude and the number of PD pulses per cycle were found to be lower with electrical tree growth duration in LDPE nanocomposites as compared to unfilled LDPE. The same trend was seen with increased filler loading also.

Tuning of phonon anharmonicity in pyrochlore titanates: temperature-dependent Raman studies of Sm2Ti2-xZrxO7 (x=0, 1/2, 3/4, and 2)and stuffed spin-ice Ho2+xTi2-xO7-x/2 (x=0, 1/3, and 2/3)

Anomalous temperature dependence of Raman phonon wavenumbers attributed to phononphonon anharmonic interactions has been studied in two different families of pyrochlore titanates. We bring out the role of the ionic size of titanium and the inherent vacancies of pyrochlore in these anomalies by studying the effect of replacement of Ti4?+ by Zr4?+ in Sm2Ti2O7 and by stuffing Ho3?+ in place of Ti4?+ in Ho2Ti2O7 with appropriate oxygen stoichiometry. Our results show that an increase in the concentration of the larger ion, i.e. Zr4?+ or Ho3?+, reduces the phonon anomalies, thus implying a decrease in the phononphonon anharmonic interactions. In addition, we find signatures of coupling between a phonon and crystal field transition in Sm2Ti2O7, manifested as an unusual increase in the phonon intensity with increasing temperature. Copyright (c) 2011 John Wiley & Sons, Ltd.

Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films

Amorphous thin film Ge15Te85-xSnx (1 <= x <= 5) and Ge17Te83-xSnx (1 <= x <= 4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge15Te85-xSnx and Ge17Te83-xSnx amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge15Te85-xSnx and Ge17Te83-xSnx thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.

Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range

This work focuses on the design of torsional microelectromechanical systems (MEMS) varactors to achieve highdynamic range of capacitances. MEMS varactors fabricated through the polyMUMPS process are characterized at low and high frequencies for their capacitance-voltage characteristics and electrical parasitics. The effect of parasitic capacitances on tuning ratio is studied and an equivalent circuit is developed. Two variants of torsional varactors that help to improve the dynamic range of torsional varactors despite the parasitics are proposed and characterized. A tuning ratio of 1:8, which is the highest reported in literature, has been obtained. We also demonstrate through simulations that much higher tuning ratios can be obtained with the designs proposed. The designs and experimental results presented are relevant to CMOS fabrication processes that use low resistivity substrate. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). DOI: 10.1117/1.JMM.11.1.013006]