Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range


Autoria(s): Venkatesh, Chenniappan; Bhat, Navakanta; Vinoy, KJ; Grandhi, Satish
Data(s)

01/02/2012

Resumo

This work focuses on the design of torsional microelectromechanical systems (MEMS) varactors to achieve highdynamic range of capacitances. MEMS varactors fabricated through the polyMUMPS process are characterized at low and high frequencies for their capacitance-voltage characteristics and electrical parasitics. The effect of parasitic capacitances on tuning ratio is studied and an equivalent circuit is developed. Two variants of torsional varactors that help to improve the dynamic range of torsional varactors despite the parasitics are proposed and characterized. A tuning ratio of 1:8, which is the highest reported in literature, has been obtained. We also demonstrate through simulations that much higher tuning ratios can be obtained with the designs proposed. The designs and experimental results presented are relevant to CMOS fabrication processes that use low resistivity substrate. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). DOI: 10.1117/1.JMM.11.1.013006]

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/44562/1/jou_mic_nano%2Cmems_moems_2012.pdf

Venkatesh, Chenniappan and Bhat, Navakanta and Vinoy, KJ and Grandhi, Satish (2012) Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range. In: JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 11 (1).

Publicador

SPIE

Relação

http://dx.doi.org/10.1117/1.JMM.11.1.013006

http://eprints.iisc.ernet.in/44562/

Palavras-Chave #Electrical Communication Engineering
Tipo

Journal Article

PeerReviewed