Triton-He-3 relative and differential flows as probes of the nuclear symmetry energy at supra-saturation densities

Using a transport model coupled with a phase-space coalescence afterburner, we study the triton-He-3 (t-He-3) ratio with both relative and differential transverse flows in semicentral Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. The neutron-proton ratios with relative and differential flows are also discussed as a reference. We find that similar to the neutron-proton pairs, the t-He-3 pairs also carry interesting information regarding the density dependence of the nuclear symmetry energy. Moreover, the nuclear symmetry energy affects more strongly the t-He-3 relative and differential flows than the pi(-)/pi(+) ratio in the same reaction. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.

Isolated sub-30-as pulse generation of an He+ ion by an intense few-cycle chirped laser and its high-order harmonic pulses

We present an efficient method to generate a ultrashort attosecond (as) pulse when a model He+ ion is exposed to the combination of an intense few-cycle chirped laser pulse and its 27th harmonics. By solving the time-dependent Schroumldinger equation, we found that high-order harmonic generation (HHG) from He+ ion is enhanced by seven orders of magnitude due to the presence of the harmonic pulse. After optimizing the chirp of the fundamental pulse, we show that the cut-off energy of the generated harmonics is extended effectively to I-p+25.5U(p). As a result, an isolated 26-as pulse with a bandwidth of 170.5 eV can be obtained directly from the supercontinuum around the cut-off of HHG. To better understand the physical origin of HHG enhancement and attosecond pulse emission, we perform semiclassical simulations and analyze the time-frequency characteristics of attosecond pulse.

Void swelling in a 9Cr ferritic/martensitic steel irradiated with energetic Ne-ions at elevated temperatures

In this work the void swelling behavior of a 9Cr ferritic/martensitic steel irradiated with energetic Ne-ions is studied. Specimens of Grade 92 steel (a 9%Cr ferritic/martensitic steel) were subjected to an irradiation of Ne-20-ions (with 122 MeV) to successively increasing damage levels of 1, 5 and 10 dpa at a damage peak at 440 and 570 degrees C, respectively. And another specimen was irradiated at a temperature ramp condition (high flux condition) with the temperature increasing from 440 up to 630 degrees C during the irradiation. Cross-sectional microstructures were investigated with a transmission electron microscopy (TEM). A high concentration of cavities was observed in the peak damage region in the Grade 92 steel irradiated to 5 dpa, and higher doses. The concentration and mean size of the cavities showed a strong dependence on the dose and irradiation temperature. Enhanced growth of the cavities at the grain boundaries, especially at the grain boundary junctions, was observed. The void swelling behavior in similar 9Cr steels irradiated at different conditions are discussed by using a classic void formation theory. (c) 2008 Elsevier B.V. All rights reserved.

Single-electron capture in keV Ar15+...18++He collisions

Single-electron capture in 14 keV q(-1) Ar15+...18++He collisions is investigated both experimentally and theoretically. Partial cross sections and projectile scattering angle dependencies have been deduced from the target ion recoil momenta measured by the COLTRIMS technique. The comparison with close-coupling results obtained from a two-centre extension of the basis generator method yields good overall agreement, demonstrating the applicability of close-coupling calculations to collision systems involving highly charged ions in charge states up to 18+.

铝镁尖晶石中He离子注入引起损伤的退火行为研究

利用卢瑟福沟道背散射技术结合表面的原子力显微分析，对注He的铝镁尖晶石晶体的晶格损伤及表面形变随退火温度变化的关系进行了研究.结果表明，不同注入剂量的样品中晶格损伤和表面形变表现出显著不同的退火行为.分析认为造成损伤演化的这种差异与注入的He原子在晶体中不同的聚集状态有关.

L-shell ionization accompanied by one-electron capture in Cq+, Oq+ (q=2,3)-Ne collisions

The L-shell ionization processes of a Ne gas target associated with single-electron capture by bombardment of Cq+ and Oq+ (q=2,3) are investigated using the projectile-recoil-ion coincidence method in the energy range from 80 to 400 keV/u (v(p)=1.8-4 a.u.). The cross-section ratios (R-k1) of k-fold ionization to single capture are compared with the results for He2+-Ne collisions by Dubois [Phys. Rev. A 36, 2585 (1987)]. All the velocity dependences are quite similar. The ratios increase as the projectile energy increases in the lower-energy region, reach the maxima for projectile energies around E-max=160q(1/2) keV/u, and then decrease at higher energies. These results qualitatively agree with our calculations in terms of the Bohr-Lindhard model within the independent-electron approximation.

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Surface morphology of He-implanted single-crystalline silicon

Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0x10(16) to 2.0x10(17) ions/cm(2) and subsequently thermally annealed at 800 degrees C for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0 x 10(16) ions /cm(2) implanted sample surface; spherical-shaped blisters with an average height wound 10.0nm were found on the 5.0 x 10(16) ions/cm(2) implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0 X 10(17) ions /cm(2). Exfoliations occurred on the sample surface to a dose of 2.0 x10(17) ions /cm(2). Mechanisms underlying the surface change were discussed.

The many-particle scattering system He++ on He: Experiment and a complete unified description

Highly differential experimental results of the scattering system He++ on He at 30 keV are presented as well as a complete unified theoretical description where excitation, transfer and ionization are treated simultaneously on an ab initio level. The agreement even for highly differential cross sections is nearly complete although no explicit correlation besides Pauli correlation is included in the calculations.

Ab initio calculations of differential cross sections for single charge transfer in He-3(2+)+He-4 collisions

The single charge transfer process in He-3(2+)+He-4 collisions is investigated using the quantum-mechanical molecular-orbital close-coupling method, in which the adiabatic potentials and radial couplings are calculated by using the ab initio multireference single- and double-excitation configuration interaction methods. The differential cross sections for the single charge transfer are presented at the laboratorial energies E = 6 keV and 10 keV for the projectile He-3(2+). Comparison with the existing data shows that the present results are better in agreement with the experimental measurements than other calculations in the dominant small angle scattering, which is attributed to the accurate calculations of the adiabatic potentials and the radial couplings.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Applicability of the reaction window theory

Based on the molecular Coulombic over barrier model for description of slow ion-atom collisions, the reaction window theory related to projectile velocity is presented briefly. According to the theory, the state-selective differential cross sections of single electron capture in O8+ -H, A(8+) -H, Ar8+-He, Ne10+-He and Ar18+-He collisions at different collision velocities are calculated and compared with experimental results. Calculations are also done for single, double, and triple electron capture in N-15(7+)-Ne collisions at fixed velocity of 0.53 a.u., and are compared with experimental data. It is found that the predictions of the final electronic state distribution of captured electron(s) are in agreement with experimental data, and both theory and experiments show that the widths of the reaction window increase with the projectile velocity. The differential cross sections predicted by the theory are larger for smaller Q-values, vice versa, when compared with experimental data.

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Measurement of neutron-removal cross section of neutron-rich nucleus He-8 by using the transmission method

The neutron-rich nucleus He-8 is selected by RIBLL from the breakup of 50MeV/u C-13 on be target at HIRFL. The 2n-removal and 4n-removal cross section of He-8 was measured by using the transmission method. The point that He-4 is He-8 core can be reduced from the experiment data via the Ogawa's theory.