Localização em espaços interiores por luz visível para robôs móveis

Esta dissertação investiga a localização em espaços interiores através da comunicação por luz visível para robôs móveis, com base nos LEDs fixos nos edifícios, dando particular atenção à simulação e desenho do sensor, com vista ao desenvolvimento de um sensor de localização. Explica-se o crescimento da tecnologia LED e da constante necessidade de localização do homem em espaços interiores. Apresentado algumas características do LED e dos foto-detetores existentes. Com uma breve referencia a algumas das comunicações por luz visível de baixo débito possíveis de implementar. O desenvolvimento do protótipo do sensor inicia-se, principalmente, pela simulação de alguns dispositivos essenciais e das suas caraterísticas, como o emissor LED no controlo do ^angulo de meia potência (HPA) e a altura a que se encontra, e no recetor foto-díodo e a sua restrição de campo de visão (FOV). Simula-se o sensor pretendido com o número de foto-díodos necessários otimizando o espaço físico disponível e fazendo não só um refinamento no FOV mas também na distribuição espacial dos foto-díodos com funções predefinidas para a redução de incertezas de decisão de localização do robô. Estes resultados permitiram a construção física do sensor, desde o suporte para os foto-díodos, tendo em conta todas as medidas durante as simulações, e terminando com o desenvolvimento dos sensores e a sua integração completa. O tratamento de dados da leitura dos sinais recebidos do sensor são tratados por um microcontrolador, permitindo calcular parâmetros fundamentais no cálculo da posição. No final, os resultados teóricos bem como os práticos obtidos ao longo do desenvolvimento e possíveis propostas para trabalhos futuros que beneficiam desta investigação

Optical Wireless Communication for Mobile Platforms

The past few decades have witnessed the widespread adaptation of wireless devices such as cellular phones and Wifi-connected laptops, and demand for wireless communication is expected to continue to increase. Though radio frequency (RF) communication has traditionally dominated in this application space, recent decades have seen an increasing interest in the use of optical wireless (OW) communication to supplement RF communications. In contrast to RF communication technology, OW systems offer the use of largely unregulated electromagnetic spectrum and large bandwidths for communication. They also offer the potential to be highly secure against jamming and eavesdropping. Interest in OW has become especially keen in light of the maturation of light-emitting diode (LED) technology. This maturation, and the consequent emerging ubiquity of LED technology in lighting systems, has motivated the exploration of LEDs for wireless communication purposes in a wide variety of applications. Recent interest in this field has largely focused on the potential for indoor local area networks (LANs) to be realized with increasingly common LED-based lighting systems. We envision the use of LED-based OW to serve as a supplement to RF technology in communication between mobile platforms, which may include automobiles, robots, or unmanned aerial vehicles (UAVs). OW technology may be especially useful in what are known as RF-denied environments, in which RF communication may be prohibited or undesirable. The use of OW in these settings presents major challenges. In contrast to many RF systems, OWsystems that operate at ranges beyond a few meters typically require relatively precise alignment. For example, some laser-based optical wireless communication systems require alignment precision to within small fractions of a degree. This level of alignment precision can be difficult to maintain between mobile platforms. Additionally, the use of OW systems in outdoor settings presents the challenge of interference from ambient light, which can be much brighter than any LED transmitter. This thesis addresses these challenges to the use of LED-based communication between mobile platforms. We propose and analyze a dual-link LED-based system that uses one link with a wide transmission beam and relaxed alignment constraints to support a more narrow, precisely aligned, higher-data-rate link. The use of an optical link with relaxed alignment constraints to support the alignment of a more precisely aligned link motivates our exploration of a panoramic imaging receiver for estimating the range and bearing of neighboring nodes. The precision of such a system is analyzed and an experimental system is realized. Finally, we present an experimental prototype of a self-aligning LED-based link.

DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.

Influence of fabrication conditions on the electrical behaviour of polymer Schottky diodes

Evidence is presented which shows that anomalies in the I-V characteristics of Schottky diodes formed from electrodeposited poly(3-methylthiophene) are related to the time films are held under vacuum prior to deposition of the rectifying aluminium electrode. For short times (similar to 15 mins) a plateau appears in the forward bias characteristic which disappears leading to a significant voltage offset as the device ages or is driven into high forward bias.

Charge transport in poly(3-methylthiophene) schottky barrier diodes

Schottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour event at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices. © 1993.

Photocurrents in P3MeT Schottky barrier diodes

The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, V-t, across the depletion region. At high reverse bias the superlinear dependence of the photocurrent on V-t suggests that internal photoemission from the rectifying aluminium electrode may be the dominant process.

Schottky barrier diodes from semiconducting polymers

Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electrical behaviour investigated. I-V characteristics revealed a dependence on the fabrication conditions, specifically on the time under vacuum prior to evaporation of the rectifying contact and post-metal annealing at elevated temperature. The available evidence is consistent with the formation of a thin insulating layer between the metal and the polymer following these procedures. Long periods under vacuum prior to deposition of the aluminium electrode reduced the likelihood of such a layer forming. Capacitance-voltage plots of the devices were stable to voltage cycling, so long as the forward voltage did not exceed similar to 1 V. Above this a small degree of hysteresis was observed, which is attributed to the filling/emptying of interface states or traps in the polymer.

DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.

Influence of fabrication conditions on the electrical behaviour of polymer Schottky diodes

Evidence is presented which shows that anomalies in the I-V characteristics of Schottky diodes formed from electrodeposited poly(3-methylthiophene) are related to the time films are held under vacuum prior to deposition of the rectifying aluminium electrode. For short times (similar to 15 mins) a plateau appears in the forward bias characteristic which disappears leading to a significant voltage offset as the device ages or is driven into high forward bias.

Charge transport in poly(3-methylthiophene) schottky barrier diodes

Schottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour event at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices. © 1993.