Influence of fabrication conditions on the electrical behaviour of polymer Schottky diodes


Autoria(s): Gomes, Henrique L.; Jones, G. W.; Taylor, D. M.
Data(s)

26/06/2015

26/06/2015

1997

Resumo

Evidence is presented which shows that anomalies in the I-V characteristics of Schottky diodes formed from electrodeposited poly(3-methylthiophene) are related to the time films are held under vacuum prior to deposition of the rectifying aluminium electrode. For short times (similar to 15 mins) a plateau appears in the forward bias characteristic which disappears leading to a significant voltage offset as the device ages or is driven into high forward bias.

Identificador

0379-6779

AUT: HGO00803;

http://hdl.handle.net/10400.1/6596

https://dx.doi.org/10.1016/S0379-6779(97)80267-6

Idioma(s)

eng

Publicador

Elsevier

Relação

P-001-BZ8

Direitos

restrictedAccess

Tipo

article