956 resultados para Databases on Properties of Inorganic Materials
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Power Point presentado en The Energy and Materials Research Conference - EMR2015 celebrado en Madrid (España) entre el 25-27 de febrero de 2015
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Optical spectroscopic properties of Er3+-doped alkaline-earth metal modified fluoropho sphate glasses have been investigated experimentally for developing broadband fiber and planar amplifiers. The results show a strong correlation between the alkaline-earth metal content and the spectroscopic parameters such as absorption and emission cross sections, full widths at half-maximum and Judd-Ofelt intensity parameters. It is found that strontium ions could have more influences on the Judd-Ofelt intensity parameters and the absorption and emission cross sections than other alkaline-earth metal ions such as Mg2+, Ca2+, Ba2+. The sample containing 23 mol% strontium fluoride exhibits the maximum emission cross section of 7.58 x 10(-21) cm(2), the broadest full width at half-maximum of 65 nm and the longer lifetime of 8.6 ms among the alkaline-earth metal modified fluorophosphates glasses studied. The Judd-Ofelt intensity parameter Omega(6)s, the emission cross sections and the full widths at half-maximum in the Er3+-doped fluorophosphate glasses studied are larger than in the silicate and phosphate glasses.
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Er3+-doped lithium-potassium mixed alkali aluminophosphate glasses belonging to the oxide system xK(2)O-(15x)Li2O-4B(2)O(3)-11Al(2)O(3)-5BaO-65P(2)O(5) are obtained in a semi-continuous melting quenching process. Spectroscopic properties of Er3+-doped glass matrix have been analysed by fitting the experimental data with the standard Judd-Ofelt theory. It is observed that Judd-Ofelt intensity parameters-Omega(t)(t=2, 4 and 6) of Er3+ change when the second alkali is introduced into glass matrix. The variation of line strength S-ed[I-4(13/2),I-4(15/2)] follows the same trend as that of the Omega(6) parameter. The effect of mixed alkali on the spectroscopic properties of the aluminophosphate glasses, such as absorption cross-section, stimulated emission cross-section, spontaneous emission probability, branching ratio and the radiative lifetime, has also been investigated in this paper.
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this paper is retracted
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The absorption spectra, emission spectra and infrared spectra of Er3+/Yb3+ co-doped xBi(2)O(3)-(65 - x)P2O5-4Yb(2)O(3)-11Al(2)O(3)-5BaO-15Na(2)O were measured and investigated. Spontaneous emission probability, radiative lifetime and branching ratios of Er3+ were calculated according to the Judd-Ofelt theory. The role of substitution of Bi2O3 for P2O5 on luminescence of Er3+/Yb3+ co-doped aluminophosphate glasses has been investigated. The calculated radiative lifetimes (tau(rad)) for I-4(13/2) and I-4(11/2) were decreasing with Bi2O3 content increases, whereas the measured total lifetime (tau(meas)) for I-4(13/2) showed linearly increasing trends. The effect of Bi2O3 introduction on OH- groups was also discussed according to the IR transmittance spectra of glasses. It was found that FWHM of glasses were not affected with the substitution of Bi2O3 for P2O5. The emission spectra intensity increased with Bi2O3 content due to the decreases of phonon energy and OH- content in glasses. (C) 2007 Elsevier B.V. All rights reserved.
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Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.
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We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.